Details, datasheet, quote on part number: AA026P1-00
Description25-29 GHZ GAAS Mmic Driver Amplifier
CompanyAlpha Industries
DatasheetDownload AA026P1-00 datasheet
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Features, Applications

Single Bias Supply Operation 17 dB Typical Small Signal Gain 16 dBm Typical P1 dB Output Power at 26.5 GHz 0.25 m Ti/Pd/Au Gates 100% On-Wafer RF and DC Testing 100% Visual Inspection MT 2010

Dimensions indicated in mm. All DC (V) pads are 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm.


Skyworks' three-stage reactively-matched 2529 GHz GaAs MMIC driver amplifier has typical small signal gain 17 dB with a typical of 16 dBm at 26.5 GHz. The chip uses Skyworks' proven 0.25 m MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. All chips are screened for gain, output power and S-parameters prior to shipment for guaranteed performance.

Characteristic Operating Temperature (TC) Storage Temperature (TST) Bias Voltage (VD) Power In (PIN) Junction Temperature (TJ) Value +150C 7 VDC 16 dBm 175C

Parameter Drain Current Small Signal Gain Input Return Loss Output Return Loss Output Power 1 dB Gain Compression Saturated Output Power Two-Tone Output Third-Order Thermal Resistance2

1. Not measured a 100% basis. 2. Calculated value based on measurement of discrete FET. 3. Typical represents the median parameter value across the specified frequency range for the median chip.

Skyworks Solutions, Inc. [781] 376-3000 Fax [781] 376-3100 Email

Output Power and Relative Third-Order Intermodulation Products = 26 GHz, VDS 6 V

For biasing on, adjust VDS from zero to the desired value (6 V recommended). For biasing off, reverse the biasing on procedure.


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