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Details, datasheet, quote on part number:RM80614
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Datasheet text preview:
RM806
Power Amplifier Module for TDMA AMPS (824849 MHz)
The dual-mode RM806 Power Amplifier (PA) is a fully matched, 6-pin, surface mount Distinguishing Features module designed for Time Division Multiple Access (TDMA) and Advanced Mobile · Low voltage positive bias supply Phone Service (AMPS) mobile units operating in the 824-849 MHz cellular bandwidth. · Good linearity · High efficiency This device meets stringent IS-136 linearity requirements beyond 30 dBm output power and can be driven to power output levels beyond 31 dBm for high efficiency FM · Dual mode operation · Large dynamic range mode operation. A single GaAs (GaAs) Microwave Monolithic Integrated Circuit (MMIC) contains all active circuitry in the module. The MMIC contains onboard bias · 6-pin package (6 mm x 6mm x 1.5 mm) circuitry as well as input and interstage matching circuits. The output match is · Power down control realized off-chip within the module package to optimize efficiency and power performance into a 50 ohm load. This device is manufactured using Skyworks' GaAs Heterojunction Bipolar Transistor (HBT) process, which provides for all positive Applications voltage DC supply operation while maintaining high efficiency and good linearity. · Digital cellular (TDMA) Primary bias to the RM806 can be supplied directly from a three-cell nickel cadmium, · Analog cellular (AMPS) a single-cell lithium-ion battery, or any other suitable battery with output in the · Wireless local loop (WLL) 3 to 4 volts range. Power down is accomplished by setting the low current reference pin to zero volts. No external supply side switch is needed as typical "off" leakage is a few microamperes with full primary voltage supplied from the battery.
Functional Block Diagram
VREF (3) VCC1 (1) VCC2 (4)
Driver Stage Bias
Power Stage Bias
RFIN (2)
Input Match
DA
Inter Stage Match
PA
Output Match
RFOUT (5)
MMIC
MODULE
(6, 7) GND
(6, 7) GND
Data Sheet © 2001, Skyworks Solutions, Inc., All Rights Reserved.
100602G Februar y 7, 2002
Electrical Specifications
RM806
Power Amplifier Module for TDMA AMPS (824849 MHz)
Electrical Specifications
The following tables list the electrical characteristics for the RM806 Power Amplifier. Table 1 lists the absolute maximum rating for continuous operation. Table 2 lists the recommended operating conditions for achieving the electrical performance listed in Table 4.
Table 1. Absolute Maximum Ratings(1) Parameter
RF Input Power Supply Voltage Reference Voltage Case Operating Temperature Storage Temperature
NOTE(S):
(1)
Symbol
Pin Vcc Vref Tc Tstg
Minimum
-- -- -- 30 55
Nominal
3.0 3.4 3.1 +25 --
Maximum
8.0 5.0(2) 3.3 +110 +125
Unit
dBm Volts Volts °C °C
No damage assuming only one parameter is set at limit at a time with all other parameters set at or below nominal value. (2) Under pulsed TDMA modulated mode, operation at maximum supply voltage of 6.2 V up to 100 ms.
Table 2. Recommended Operating Conditions Parameter
Supply Voltage Reference Voltage Operating Frequency Operating Temperature
Symbol
Vcc Vref Fo To
Minimum
3 .0 3 .0 824 30
Nominal
3.4 3.1 836.5 +25
Maximum
4.2 3.3 849 +85
Unit
Volts Volts MHz °C
2
Skyworks
100602G February 7, 2002
RM806
Power Amplifier Module for TDMA AMPS (824849 MHz)
Electrical Specifications
Table 3. Electrical Specifications for TDMA / AMPS Nominal Operating Conditions(1) Characteristics
Quiescent current Reference current Leakage current GainAnalog GainDigital
Condition
-- Po 32 dBm PA Off Po = 0 dBm Po = 31 dBm Po = 0 dBm Po = 30 dBm
Symbol Minimum(2)
Iq Iref -- G Gp G Gp PAEa PAEd -- -- -- 29.5 28.5 29.5 28.5
Typical
150.0 6.3 2.0 30.5 30.0 30.5 30.0
Maximum(2)
165.0 7.0 25.0 32.0 31.0 32.0 31.0
Unit
mA mA uA dB dB dB dB
Power Added Efficiency Analog Mode Po = 31 dBm Digital Mode Po = 30 dBm Adjacent Channel Power (3) 30 kHz Offset Po 30 dBm 60 kHz Offset Po 30 dBm 90 kHz Offset Po 30 dBm Harmonics Second Po 31 dBm Third Po 31 dBm PA "Turn Off Time" PA "Turn On Time" Noise Power in RX Band 869-894 MHz(4) Noise Figure Input VSWR Stability (Spurious output) Ruggedness--No damage
N O TE(S) :
(1) (2)
43.0 38.0
45.0 42.0
-- --
% %
ACP1 ACP2 ACP3
-- -- --
30.5 52.5 62.0
29.0 50.0 52.0
dBc dBc dBc
H2 H3 -- -- Np NF VSWR S Ru
-- -- -- -- -- -- -- -- --
50 42 10 10 136.5 5.5 1.5:1 -- --
43.0 40.0 -- -- 133.0 7.0 1.6:1 60 8:1
dBc dBc µs µs dBm/Hz dB -- dBc VSWR
-- -- Po 31 dBm -- -- 5:1 VSWR All phases Po 31 dBm
Vcc = +3.4 V, Vref = +3.1 V, Freq = 836.5 MHz, Tc = 25 °C. Min/Max values indicate performance over process corners and conditions specified in note 1 above unless otherwise detailed. (3) Also meets same linearity for Po 28.5 dBm @ Vcc = +3.0 V. (4) With NADC modulation applied.
100602G February 7, 2002
Skyworks
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