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Details, datasheet, quote on part number:RM807
 
 
Part:RM807
Description:RM807: pa Module For Tdma PCS (1850 1910 MHz)
Company:Alpha Industries
Datasheet:Download RM807 datasheet   File size : 564 kB
Request For quote:  Find where to buy RM807
 



Datasheet text preview:
RM807
Power Amplifier Module for TDMA PCS (1850­1910 MHz)
The RM807 Power Amplifier Module (PAM) for Personal Communications Service (PCS) is a fully matched 6-pin surface mount module developed for PCS and wireless local loop applications. This small and efficient power amplifier packs a full 1850­1910 MHz bandwidth coverage into a single compact package. This device meets the stringent spectral linearity requirements of Time Division Multiple Access (TDMA) PCS transmission with high power added efficiency to output power of 29.5 dBm. A single Gallium Arsenide (GaAs) Microwave Monolithic Integrated Circuit (MMIC) contains all active circuitry in the module. The MMIC contains onboard bias circuitry as well as input and interstage matching circuits. The output match is realized off-chip within the module package to optimize efficiency and power performance into a 50 ohm load. This device is manufactured with Skyworks' GaAs Heterojunction Bipolar Transistor (HBT) process that provides for all positive voltage DC supply operation while maintaining high efficiency and good linearity. Primary bias to the RM807 can be supplied directly from a three-cell nickel cadmium, single cell lithium ion, or other suitable battery with output in the 3­4 volts range. Power down is accomplished by setting the voltage on the low current reference pin to zero volts. No external supply side switch is needed as typical "off" leakage is a few microamperes with full primary voltage supplied from the battery.
Distinguishing Features
· · · · · · Low voltage positive bias supply Good linearity High efficiency Large dynamic range 6-pin LCC package (6 x 6 x 1.5 mm) Power down control
Applications
· · Personal Communications Services (TDMA) Wireless Local Loop (WLL)
Functional Block Diagram
VREF (3) VCC1 (1) VCC2 (4)
Driver Stage Bias
Power Stage Bias
RF Input (2)
Input Match
DA
Inter Stage Match
PA
Output Match
RF Output (5)
MMIC
MODULE
(6, 7) GND
(6, 7) GND
Data Sheet © 2001, Skyworks Solutions, Inc., All Rights Reserved.
100409F Februar y 7, 2002
Electrical Specifications
RM807
Power Amplifier Module for TDMA PCS (1850­1910 MHz)
Electrical Specifications
The following tables list the electrical characteristics for the RM807 Power Amplifier. Table 1 lists the absolute maximum rating for continuous operation. Table 2 lists the recommended operating conditions for achieving the electrical performance listed in Table 3, which contains the electrical performance data of the RM807 Power Amplifier under recommended operating conditions.
Table 1. Absolute Maximum Ratings(1) Parameter
RF Input Power Supply Voltage Reference Voltage Case Operating Temperature Storage Temperature
NOTE(S):
(1)
Symbol
Pin Vcc Vref Tc Tstg
Minimum
-- -- -- ­30 ­55
Nominal
3.0 3.5 3.1 +25 --
Maximum
8.0 5.0(2) 3.3 +110 +125
Unit
dBm Volts Volts °C °C
No damage assuming only one parameter is set at limit at a time with all other parameters set at or below nominal value. (2) Under pulsed TDMA modulated mode, operation at maximum supply voltage of 6.2 V up to 100 ms.
Table 2. Recommended Operating Conditions Parameter
Supply Voltage Reference Voltage Operating Frequency Operating Temperature
Symbol
Vcc Vref Fo To
Minimum
3.0 3.0 1850 ­30
Nominal
3.5 3.1 1880 +25
Maximum
4 .2 3 .3 1910 +85
Unit
Volts Volts MHz °C
2
Skyworks
100409F February 7, 2002
RM807
Power Amplifier Module for TDMA PCS (1850­1910 MHz)
Table 3. Electrical Specifications for TDMA/PCS Nominal Operating Conditions(1) Characteristic
Quiescent current Reference current Leakage current Gain Power Added Efficiency Adjacent Channel Power ­30 kHz offset ­60 kHz offset ­90 kHz offset Harmonics Second Third PA "Turn off time" PA "Turn on time" Noise Power in RX band 1930 ­ 1990 MHz(2) Noise Figure Input Voltage Standing Wave Ratio Stability (spurious output) Ruggedness--no damage
N O TE ( S ) :
(1) (2)
Electrical Specifications
Condition
-- -- PA off Po = 0 dBm Po = 29.5 dBm -- Po 29.5 dBm Po 29.5 dBm Po 29.5 dBm Po 29.5 dBm Po 29.5 dBm -- -- Po 29.5 dBm -- -- 5:1 VSWR all phases Po 29.5 dBm
Symbol
Iq I ref
Minimum
-- -- --
Typical
120.0 2.0 4.5 30.0 29.0 37.0
Maximum
140.0 3 .0 25.0 31.5 31.5 --
Unit
mA mA µA dB dB %
G Gp PAED
26.0 26.0 32.0
ACP1 ACP2 ACP3
-- -- --
­30.0 ­51.0 ­55.0
­28.5 ­47.0 --
dBc dBc dBc
DFo2 DFo3 -- -- Np NF VSWR S Ru
-- -- -- -- -- -- -- -- --
­49.0 ­60.0 10.0 10.0 ­136.5 6.0 1.5:1 -- --
-- -- -- -- ­136.0 -- 1.8:1 ­60.0 10:1
dBc dBc µS µS dBm/Hz dB -- dBc VSWR
TDMA MODE, Vcc = +3.5 V, Vref = +3.1 V, Freq = 1880 MHz, Tc = +25 °C. With NADC modulation applied.
100409F February 7, 2002
Skyworks
3