Digchip : Database on electronics components
Electronics components database



Details, datasheet, quote on part number: A0560
 
 
Part numberA0560
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => DMOS (Double-diffused MOS) => Array
TitleArray
DescriptionN-channel Power MOSFET Array
CompanyAlpha Microelectronics
DatasheetDownload A0560 datasheet
 


 
Specifications, Features, Applications

Description

The ˙0560 contains six N-channel power MOS FET with VDSS V in half-bridge configuration. These enhancement-mode Power MOSFET array utilizes a DMOS structure and alpha's dielectric isolated high voltage DIMOST technology. Each MOSFET provides an accurate fraction of the drain current through a current-sense terminal to be used for control or protection. The provision of a kelvin source connection eliminates problems of common source inductance. An additional second current-sense terminal of the low-side power MOSFET eases an independent current monitoring in every half bridge.

Features

q Six dielectric isolated N-channel power MOSFET with VDSS 500 V, RDS(on) 10 q Three fast switching half-bridges q High-side power MOSFET with a current sense source q Low-side power MOSFET with two current sense sources q Integrated gate protection diodes q High density mounting q Temperature range +85░C q Package QPF - ˙0560EQ Die - ˙0560EX

Applications
q Three Phase Inverter q Suitable for motor driver and solenoid driver

Symbol K2L, K3L Description Drain terminal of the high-side MOSFET, supply terminal of the half bridge Gate terminal of the high-side MOSFET Output of the half bridge, connection ╗Source of high-side MOSFET to Drain of low-side MOSFETź Current-sense source terminal of the high-side MOSFET Kelvin source terminal of the high-side MOSFET Gate terminal of the low-side MOSFET Source terminal of the low-side MOSFET, ground terminal of the half bridge Current-sense source terminal of the low-side MOSFET Second current-sense source terminal of the low-side MOSFET Kelvin source terminal of the low-side MOSFET

Symbol VDS IDM ID1 ID2 VGS Tj Tstg Parameter Drain-to-Source Voltage Peak Drain Current = 95░C, Continuous Drain Current, VGS = 145░C, Continuous Drain Current, VGS 10 V Gate-to-Source Voltage Junction Temperature Storage Temperature -25 -55 Min Max 500 1.2 tbd 20 150 Unit ░C

Symbol V(BR)DSS RDS(on) IDSS VGS IGSS Qg Ciss Coss Crss r1 r2 VSD Rthja Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Drain-to-Source Leakage Current Gate-to-Source Threshold Voltage Gate-to-Source Leakage Current Total Gate Charge Input Capacitance Output Capacitance Output Capacitance Current Sense Ratio IDxx / ICxx Current Sense Ratio IDxL / ICMx Diode Forward Voltage Thermal Resistance Junction-to-Ambient

Symbol td(on) tr td(off) tf Parameter Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Conditions




Some Part number from the same manufacture Alpha Microelectronics
A1260 Backlight-driver Ics
A1510 Analog Switch ic
A1610 Coil Driver ic
A1620
A1624
A1900 High Input Voltage Linear Regulator
A1902
A1905
A4010 Capacitive Sensor Interface ic
A4412 Electroluminescent Lamp Driver ic
A4424
SE6100 Ask Transceiver ic