Details, datasheet, quote on part number: A617308S-10
CategoryMemory => SRAM => SRAM
DescriptionSRAM High Speed Asynchronous 1Mb x8
CompanyAMIC Technology Corporation
DatasheetDownload A617308S-10 datasheet
Find where to buy


Features, Applications
Document Title X 8 BIT HIGH SPEED CMOS SRAM Revision History

Initial issue Change VDR(Max.) from to 5.5V Add 32-pin SOP package Modify 32-pin SOJ package outline drawing and Dimensions

Add 15ns part Change operating current from to 150mA (Max.) Change VDR(Min.) from to 3V Remove 32-pin SOP package


n Single + 5V power supply n Access times: 10/12/15 ns (max.) n Current: Operating: 150mA (max.) Standby: 12mA (max.) n Full static operation, no clock or refreshing required All inputs and outputs are directly TTL compatible Common I/O using three-state output Data retention voltage: 3V (min.) Available in 32-pin SOJ and TSOP packages

The is a high-speed, low-power 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a single 5V power supply. It is built using high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for direct interfacing with common system bus structures. Minimum standby power is drawn by this device when chip enable is disable, independent of the other input levels. Data retention is guaranteed at a power supply voltage as low as 3V.

Data Inputs/Outputs Chip Enable 1 Chip Enable 2 Output Enable Write Enable Power Supply Ground No Connection


Related products with the same datasheet
Some Part number from the same manufacture AMIC Technology Corporation
A617308S-12 SRAM High Speed Asynchronous 1Mb x8
A61L6316 SRAM High Speed Asynchronous 1Mb X16
A61L73081 128k X 8 Bit High Speed CMOS SRAM
A623308M-70S 70ns; Operating Current:35mA; Standby Current:10mA 8K X 8bit CMOS SRAM
A625308A SRAM Low Power & Low Voltage 0.25Mb x8
A627308 SRAM Low Power & Low Voltage 1Mb x8
A627308X 128k X 8 Bit CMOS SRAM
A627308X-10S SRAM Low Power & Low Voltage 1Mb x8
A62L256 SRAM Low Power & Low Voltage 0.25Mb x8
A62S6308 SRAM Low Power & Low Voltage 0.5Mb x8

A45L9332AE-6 : DRAM Sdram Sgram 16Mb X32

A62S8308V-70SI : SRAM Low Power & Low Voltage 2Mb x8

A48P3616V-5 : 16M X 16 Bit DDR DRAM The 256Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or wri

A67L7336E-3.8 : 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAM The AMIC Zero Bus Latency (ZeBLTM) SRAM family employs high-speed, low-power CMOS designs using an advanced CMOS process. The A67L8318, A67L7336 SRAMs integrate a 256K X 18, 128K X 36 SRAM core with advanced synchronous peripheral circuitry and

A25L05PMF-50F : 2mbit / 1mbit / 512kbit, Low Voltage, Serial Flash Memory With 85mhz SPI Bus Interface

A29L160AUV-90 : 2M X 8 Bit / 1M X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory

A63L8336E-3.2 : 256K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output

A63L73361 : 128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output

0-C     D-L     M-R     S-Z