Details, datasheet, quote on part number: A61L6316
PartA61L6316
CategoryMemory => SRAM => SRAM
TitleSRAM
DescriptionSRAM High Speed Asynchronous 1Mb X16
CompanyAMIC Technology Corporation
DatasheetDownload A61L6316 datasheet
Quote
Find where to buy
 
  

 

Features, Applications
Document Title X 16 BIT HIGH SPEED CMOS SRAM Revision History

Initial issue Final spec. release Add -10 spec. Change ICC1 from 220mA (-12) Change ICC1 from 210mA (-15) Change ISB1 from to 12mA Change ICDR from to 5mA Add tBE, tBLZ, tBHZ, tBW parameters

Features

n Center power pinout n Supply voltage: 3.3V10% n Access times: 10/12/15 ns (max.) n Current: Operating: -10: 230mA (max) -12: 220mA (max.) -15: 210mA (max.) Standby: TTL: 25mA (max.) CMOS: 12mA (max.) n Extended operating temperature range: to 85C for -I series n Full static operation, no clock or refreshing required n All inputs and outputs are directly TTL-compatible n Common I/O using three-state output n Data retention voltage: 2V (min.) n Available 44-pin 400mil SOJ and 44-pin 400mil TSOP(II) forward packages.

The is a high speed 1,048,576-bit static random access memory organized as 65,536 words by 16 bits and operates on low power supply voltage from It is built using AMIC's high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for direct interfacing with common system bus structures. The chip enable input is provided for POWER-DOWN, to disable the device. Two byte enable inputs and an output enable input are included for easy interfacing. Data retention is guaranteed at a power supply voltage as low as 2V.

10/12/15 ns Data Retention (ICCDR, Typ.) 3mA Standby (ISB1, Typ.) 5mA

1. Typical values are measured at VCC = 25C and not 100% tested. 2. Data retention current VCC = 2.0V.


 

Related products with the same datasheet
A61L6316-10
A61L6316-12
A61L6316-15
A61L6316S
A61L6316S-10
A61L6316S-10I
A61L6316S-12
A61L6316S-12I
A61L6316S-15
A61L6316S-15I
A61L6316V-10
A61L6316V-10I
Some Part number from the same manufacture AMIC Technology Corporation
A61L6316-10 SRAM High Speed Asynchronous 1Mb X16
A61L73081 128k X 8 Bit High Speed CMOS SRAM
A623308
A623308M-70S 70ns; Operating Current:35mA; Standby Current:10mA 8K X 8bit CMOS SRAM
A625308A SRAM Low Power & Low Voltage 0.25Mb x8
A627308 SRAM Low Power & Low Voltage 1Mb x8
A627308X 128k X 8 Bit CMOS SRAM
A627308X-10S SRAM Low Power & Low Voltage 1Mb x8
A62L256 SRAM Low Power & Low Voltage 0.25Mb x8
A62S6308 SRAM Low Power & Low Voltage 0.5Mb x8
A62S6316 SRAM Low Power & Low Voltage 1Mb X16
Same catergory

71V3577 : 3.3V 128K X 36 Synchronous Flow-through SRAM W/3.3V I/o. 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect The IDT71V3577/79 are high-speed SRAMs organized x 18. The IDT71V3577/79 SRAMs contain write, data, address and control registers. There are no registers in the data output path (flow-through architecture). Internal logic allows the SRAM to generate a self-timed.

AAM29LV640DL101REE : 64 Megabit ( 4 M X 16-bit ) CMOS 3.0 Volt-only Uniform Sector Flash Memory With Versatilei Control.

HYB39S16400 : 16 Mbit Synchronous DRAM. Advanced Information High Performance: CAS latency Units MHz ns Multiple Burst Read with Single Write Operation Automatic and Controlled Precharge Command Data Mask for Read/Write control 8) Dual Data Mask for byte control 16) Auto Refresh (CBR) and Self Refresh Suspend Mode and Power Down Mode 4096 refresh cycles/64 ms Random Column Address every.

K4H560838B : = K4H560838B 256Mb DDR Sdram ;; Organization = 32Mx8 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 8K/64ms ;; Speed = A2,B0,A0 ;; Package = 66TSOP2 ;; Power = C,l ;; Production Status = Eol ;; Comments = DDR200/DDR266.

K6R1016C1B : Fast SRAM. = K6R1016C1B 64K X 16 Bit High-speed CMOS Static RAM ;; Organization = 64Kx16 ;; Vcc(V) = 5.0 ;; Speed-tAA(ns) = 8,10,12 ;; Operating Temperature = C,i ;; Operating Current(mA) = 200,195,190 ;; Standby Current(mA) = 10 ;; Package = 44SOJ,44TSOP2 ;; Production Status = Eol ;; Comments = -.

M383L6423BT0 : = M383L6423BT0 64Mx72 DDR Sdram 184pin Dimm Based on 32Mx8 ;; Density(MB) = 512 ;; Organization = 64Mx72 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 8K/64ms ;; Speed = Z,Y,0 ;; Power = G,f ;; #of Pin = 184 ;; Component Composition = (32Mx8)x18 ;; Production Status = Eol ;; Comments = Registered,ecc.

MH16S72BAMD-6 : 16mx72 Sdram. Some of contents are subject to change without notice. The 16777216 - word x 72-bit Synchronous DRAM module. This consist of eighteen industry standard x 8 Synchronous DRAMs in TSOP. The TSOP on a card edge dual in-line package provides any application where high densities and large of quantities memory are required. This is a socket-type memory module.

N18S1825P1B : Synch, Pipeline, 18, 2.5, as Fast as 200, as Fast as 3.0, 100-TQFP, 119-PBGA, 165-FPBGA,.

V436664S04VTG-10PC : 3.3 Volt 64m X 64 High Performance Pc100 Unbuffered Sdram Module. V436664S04VTG-10PC 3.3 VOLT x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE s 168 Pin Unbuffered x 64 bit Oganization SDRAM Modules s Utilizes High Performance x 8 SDRAM in TSOPII-54 Packages s Fully PC Board Layout Compatible to INTEL'S Rev 1.0 Module s Single +3.3V 0.3V) Power Supply s Programmable CAS Latency, Burst Length, and Wrap Sequence.

X88257 : E2 Micro-peripheral. Multiplexed Address/Data Bus --Direct Interface to Popular 8051 Family High Performance CMOS --Fast Access Time, 120ns --Low Power --60mA Active Maximum --500A Standby Maximum Software Data Protection Toggle Bit Polling --Early End of Write Detection Page Mode Write --Allows to 128 Bytes to be Written in One Write Cycle High Reliability --Endurance:.

DS1254 : 2M X 8 NV SRAM With Phantom Clock The DS1254 is a fully nonvolatile static RAM (NV SRAM) (organized as 2M words by 8 bits) with built-in real-time clock. It has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the DS1254 makes use of an attached.

EDI88257C100CB : 256K X 8 STANDARD SRAM, 100 ns, CDIP32. s: Memory Category: SRAM Chip ; Density: 2097 kbits ; Number of Words: 256 k ; Bits per Word: 8 bits ; Package Type: DIP, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 ; Pins: 32 ; Logic Family: CMOS ; Supply Voltage: 5V ; Access Time: 100 ns ; Operating Temperature: -55 to 125 C (-67 to 257 F).

K5P6480YCM-T085 : SPECIALTY MEMORY CIRCUIT, PBGA69. s: Density: 67109 kbits ; Number of Words: 8000 k ; Bits per Word: 8 bits ; Package Type: 8 X 13 MM, 0.80 MM PITCH, TBGA-69 ; Pins: 69 ; Supply Voltage: 3V ; Operating Temperature: -25 to 85 C (-13 to 185 F).

MX29F040CQC-12G : 512K X 8 FLASH 5V PROM, 120 ns, PQCC32. s: Memory Category: Flash, PROM ; Density: 4194 kbits ; Number of Words: 512 k ; Bits per Word: 8 bits ; Package Type: LEAD FREE, PLASTIC, MS-016, LCC-32 ; Pins: 32 ; Logic Family: CMOS ; Supply Voltage: 5V ; Access Time: 120 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).

72V3612L12PF8 : 64 X 36 BI-DIRECTIONAL FIFO, 8 ns, PQFP120. s: Memory Category: FIFO ; Density: 2 kbits ; Number of Words: 64 k ; Bits per Word: 36 bits ; Package Type: TQFP, TQFP-120 ; Pins: 120 ; Logic Family: CMOS ; Supply Voltage: 3.3V ; Access Time: 8 ns ; Cycle Time: 12 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).

 
0-C     D-L     M-R     S-Z