Details, datasheet, quote on part number: A61L6316S-12
PartA61L6316S-12
CategoryMemory => SRAM => SRAM
TitleSRAM
DescriptionSRAM High Speed Asynchronous 1Mb X16
CompanyAMIC Technology Corporation
DatasheetDownload A61L6316S-12 datasheet
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Features, Applications
Document Title X 16 BIT HIGH SPEED CMOS SRAM Revision History

Initial issue Final spec. release Add -10 spec. Change ICC1 from 220mA (-12) Change ICC1 from 210mA (-15) Change ISB1 from to 12mA Change ICDR from to 5mA Add tBE, tBLZ, tBHZ, tBW parameters

Features

n Center power pinout n Supply voltage: 3.3V10% n Access times: 10/12/15 ns (max.) n Current: Operating: -10: 230mA (max) -12: 220mA (max.) -15: 210mA (max.) Standby: TTL: 25mA (max.) CMOS: 12mA (max.) n Extended operating temperature range: to 85C for -I series n Full static operation, no clock or refreshing required n All inputs and outputs are directly TTL-compatible n Common I/O using three-state output n Data retention voltage: 2V (min.) n Available 44-pin 400mil SOJ and 44-pin 400mil TSOP(II) forward packages.

The is a high speed 1,048,576-bit static random access memory organized as 65,536 words by 16 bits and operates on low power supply voltage from It is built using AMIC's high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for direct interfacing with common system bus structures. The chip enable input is provided for POWER-DOWN, to disable the device. Two byte enable inputs and an output enable input are included for easy interfacing. Data retention is guaranteed at a power supply voltage as low as 2V.

10/12/15 ns Data Retention (ICCDR, Typ.) 3mA Standby (ISB1, Typ.) 5mA

1. Typical values are measured at VCC = 25C and not 100% tested. 2. Data retention current VCC = 2.0V.


 

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