Details, datasheet, quote on part number: A627308V-70S
PartA627308V-70S
Category
DescriptionSRAM Low Power & Low Voltage 1Mb x8
CompanyAMIC Technology Corporation
DatasheetDownload A627308V-70S datasheet
Quote
Find where to buy
 
  

 

Features, Applications
Document Title X 8 BIT CMOS SRAM Revision History
Features

n Power supply range: 5.5V n Access times: 70/100 ns (max.) n Current: Operating: 70mA (max.) Standby: 15ľA (max.) n Full static operation, no clock or refreshing required n All inputs and outputs are directly TTL compatible n Common I/O using three-state output n Output enable and two chip enable inputs for easy application n Data retention voltage: 2V (min.) n Available in 32-pin SOP, TSOP, sTSOP (8X 13.4mm) forward type packages

The is a low operating current 1048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a power supply voltage from to 5.5V. Inputs and three-state outputs are TTL compatible and allow for direct interfacing with common system bus structures. Two chip enable inputs are provided for power down and a write enable and an output enable input are included for easy interfacing. Data retention is guaranteed at a power supply voltage as low as 2V.


Data Inputs/Outputs Chip Enable 1 Chip Enable 2 Output Enable Write Enable Power Supply Ground No Connection


 

Related products with the same datasheet
A627308-10S
A627308-70S
A627308M
A627308M-10S
A627308M-70S
A627308V
A627308V-10S
A627308X-10S
A627308X-70S
Some Part number from the same manufacture AMIC Technology Corporation
A627308X 128k X 8 Bit CMOS SRAM
A627308X-10S SRAM Low Power & Low Voltage 1Mb x8
A62L256 SRAM Low Power & Low Voltage 0.25Mb x8
A62S6308 SRAM Low Power & Low Voltage 0.5Mb x8
A62S6316 SRAM Low Power & Low Voltage 1Mb X16
A62S7308B SRAM Low Power & Low Voltage 1Mb x8
A62S7316 SRAM Low Power & Low Voltage 2Mb X16

A420616S-45 : 1m X 16 CMOS Dynamic RAM With Edo Page Mode

A428316V-25U : 25ns 256K X 16bit CMOS Dynamic RAM With Edo Page Mode

A61L73081SW-15 : 128k X 8 Bit High Speed CMOS SRAM

A62S6316 : SRAM SRAM Low Power & Low Voltage 1Mb X16

A67L8316E : SRAM SRAM High Speed Synchronous 4Mb X16

LP62E16256E : 32k X 8 Bit High Speed CMOS SRAM

A23L06161 : 16M X 16 Bit DDR DRAM The 256Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or wri

A67P0636 : 2M X 18, 1M X 36 LVTTL, Pipelined ZeBLTM SRAM The AMIC Zero Bus Latency (ZeBLTM) SRAM family employs high-speed, low-power CMOS designs using an advanced CMOS process. The A67P1618, A67P0636 SRAMs integrate a 2M X 18, 1M X 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit

A67L8336E-2.8 : 512K X 18, 256K X 36 LVTTL, Pipelined ZeBLTM SRAM The AMIC Zero Bus Latency (ZeBLTM) SRAM family employs high-speed, low-power CMOS designs using an advanced CMOS process. The A67L9318, A67L8336 SRAMs integrate a 512K X 18, 256K X 36 SRAM core with advanced synchronous peripheral circuitry and

A43E06161V : 512K X 16 Bit X 2 Banks Synchronous DRAM

A82DL1634TG-70 : Stacked Multi-chip Package (mcp) Flash Memory and Sram, A82dl16x4t(u) 16 Megabit (2mx8 Bit/1simultaneous Operation Flash Memory and 4M (256kx16 Bit) S

 
0-C     D-L     M-R     S-Z