Details, datasheet, quote on part number: A62S6308
CategoryMemory => SRAM => SRAM
DescriptionSRAM Low Power & Low Voltage 0.5Mb x8
CompanyAMIC Technology Corporation
DatasheetDownload A62S6308 datasheet
Cross ref.Similar parts: K6L0908U2/V2, K6T0908U2, KM68U512
Find where to buy


Features, Applications
Document Title X 8 BIT LOW VOLTAGE CMOS SRAM Revision History

Initial issue Modify TSOP (TSSOP) pin configuration. Modify SOP 32L, TSOP 32L and TSSOP 32L type packages outline dimensions.

Change TSSOP 32L type package to sTSOP 32L. Modify sTSOP 32L type package LE symbol dimensions. Modify 32-pin TSOP package L symbol dimensions. Finalize Add 36-ball Mini BGA (6X8) package


n Power supply range: 3.6V n Access times:70/100 ns (max.) n Current: A62S6308-S series: Operating: 40mA (max.) Standby: 15A (max.) A62S6308-SI series: *Operating:40mA (max.) *Standby: 30A (max.) n Extended operating temperature C n Full static operation, no clock or refreshing required n All inputs and outputs are directly TTL-compatible n Common I/O using three-state output n Output enable and two chip enable inputs for easy application n Data retention voltage: 2V (min.) n Available in 32-pin SOP, TSOP, sTSOP X 13.4mm) forward type and 36-ball Mini BGA (6X8) packages

The is a low operating current 524,288-bit static random access memory organized as 65,536 words by 8 bits and operates on a low power supply voltage from to 3.6V. Inputs and three-state outputs are TTL compatible and allow for direct interfacing with common system bus structures. Two chip enable inputs are provided for POWER-DOWN and a device enable and an output enable input are included for easy interfacing. Data retention is guaranteed at a power supply voltage as low as 2V.

Description Address Inputs Write Enable Chip Enable Power Supply No Connection Data Inputs/Outputs Ground Chip Enable Output Enable

Data Inputs/Outputs Ground Chip Enable Output Enable Write Enable Chip Enable Power Supply


Related products with the same datasheet
Some Part number from the same manufacture AMIC Technology Corporation
A62S6308-10S SRAM Low Power & Low Voltage 0.5Mb x8
A62S6316 SRAM Low Power & Low Voltage 1Mb X16
A62S7308B SRAM Low Power & Low Voltage 1Mb x8
A62S7316 SRAM Low Power & Low Voltage 2Mb X16
A62S7332E-4.2 4.2ns 128K X 32bit Synchronous High Speed SRAM
A62S7332E-4.5 4.5ns 128K X 32bit Synchronous High Speed SRAM
A62S7332E-5 5ns 128K X 32bit Synchronous High Speed SRAM
A62S8308 SRAM Low Power & Low Voltage 2Mb x8

A26E001AV : 2m And 256k Maskram

A29001T-70 : Flash 1Mb x8

A29512AV-90 : 55ns 20mA 64K X 8bit CMOS 5.0volt-only Uniform Sector Flash Memory

A67L7336E : SRAM SRAM High Speed Synchronous 4Mb X32

LP61L1024V-15 : SRAM SRAM High Speed Asynchronous 1Mb x8

LP62E16256CU-60LLT : SRAM SRAM Low Power & Low Voltage 4Mb X16

A67L83181E-8.5 : 256K X 18, 128K X 36 LVTTL, Flow-through ZeBLTM SRAM The AMIC Zero Bus Latency (ZeBLTM) SRAM family employs high-speed, low-power CMOS designs using an advanced CMOS process. The A67L83181, A67L73361 SRAMs integrate a 256K X 18, 128K X 36 SRAM core with advanced synchronous peripheral circuitr

A29L800ATV-70U : 1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory

A82DL1622TG-70IF : Stacked Multi-chip Package (mcp) Flash Memory and Sram, A82dl16x4t(u) 16 Megabit (2mx8 Bit/1simultaneous Operation Flash Memory and 4M (256kx16 Bit) S

A82DL1644 : Stacked Multi-chip Package (mcp) Flash Memory and Sram, A82dl16x4t(u) 16 Megabit (2mx8 Bit/1simultaneous Operation Flash Memory and 4M (256kx16 Bit) S

A63P8336E-2.8F : 256K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output

Same catergory

AT27C512R : ->UV/EPROM. 512k (64kx8) OTP EPROM. Fast Read Access Time - 45 ns Low-Power CMOS Operation 100 A max. Standby 20 mA max. Active at 5 MHz JEDEC Standard Packages 28-Lead 600-mil PDIP 32-Lead PLCC 28-Lead TSOP and SOIC 10% Supply High-Reliability CMOS Technology 2,000V ESD Protection 200 mA Latchup Immunity RapidTM Programming Algorithm - 100 s/byte (typical) CMOS and TTL Compatible.

DS1225AB-150 : SRAM. 64k Nonvolatile SRAM. 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces x 8 volatile static RAM or EEPROM Unlimited write cycles Low-power CMOS JEDEC standard 28-pin DIP package Read and write access times as fast 70 ns Lithium energy source is electrically disconnected to retain freshness.

HYM71V16655HCLT8-8 : ->Unbuffered DIMM. based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh The Hynix HYM71V16655HCT8 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx8bits CMOS Synchronous DRAMs 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package a 168pin glass-epoxy printed circuit board. One 0.22uF and one 0.0022uF decoupling capacitors.

HYS72V16300GU-7-C2 : 128MB-1GB, 168pin. 64/72-Bit 1 Bank 128MByte SDRAM Module 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules 168-Pin unbuffered 8-Byte Dual-In-Line SDRAM Modules for PC main memory applications PC100-222, PC133-333 and PC133-222 versions 1 bank 72 and 2 bank 72 organzation Optimized for byte-write non-parity (x64) or ECC (x72) applications JEDEC.

IC63LV1024 : . x 8 Hight Speed SRAM with 3.3V Central Power The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the s and products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices. High-speed access times: 10, 12 and 15 ns High-performance, low-power CMOS.

IS61NLP10018 : 1Mx18. 100 percent bus utilization No wait cycles between Read and Write Internal self-timed write cycle Individual Byte Write Control Single R/W (Read/Write) control pin Clock controlled, registered address, data and control Interleaved or linear burst sequence control using MODE input Three chip enables for simple depth expansion and address pipelining for TQFP.

K4F660411C : = K4F660411C 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ;; Organization = 16Mx4 ;; Mode = Fast Page ;; Voltage(V) = 5 ;; Refresh = 8K/64ms ;; Speed(ns) = 50,60 ;; Package = 32SOJ,32TSOP2 ;; Power = Normal ;; Production Status = Eol ;; Comments = -.

LH28F008SCT-L12 : 8M Symmetrical Block, Smart Voltage Flash Memory.

M1T1HT25FL32 : 1T-SRAM. Standard 1T-SRAM Macros.

M1T2HT18PE32E : 1T-SRAM. Standard 1T-SRAM Macros.

M28W640EC-ZBE : 64 Mbit 4mb X16, Boot Block 3v Supply Flash Memory. 64 Mbit (4Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY s SUPPLY VOLTAGE VDD to 3.6V Core Power Supply VDDQ= to 3.6V for Input/Output VPP = 12V for fast Program (optional) ACCESS TIME: 85, 90,100ns PROGRAMMING TIME: 10s typical Double Word Programming Option Quadruple Word Programming Option COMMON FLASH INTERFACE MEMORY BLOCKS Parameter.

M5M29GB161BWG : 16,777,216-bit (1048,576-word BY 16-bit) CMOS 3.3V-only, Block Erase Flash Memory.

MSU2965 : Application Specific. MSU2965/8 Bit Microcontroller, Type: MCU.

MT28F642D18 : Low Power. Async/page/burst Flash Memory, 4 Meg X 16, 59-ball Fbga, 0.18m Process Technology.

IDT72801L10PF9 : 256 X 9 BI-DIRECTIONAL FIFO, 6.5 ns, PQFP64. s: Memory Category: FIFO ; Density: 2 kbits ; Number of Words: 256 k ; Bits per Word: 9 bits ; Package Type: TQFP, TQFP-64 ; Pins: 64 ; Logic Family: CMOS ; Supply Voltage: 5V ; Access Time: 6.5 ns ; Cycle Time: 10 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).

N04Q1618C2BB2-85C : 256K X 16 STANDARD SRAM, 85 ns, PBGA48. s: Memory Category: SRAM Chip ; Density: 4194 kbits ; Number of Words: 256 k ; Bits per Word: 16 bits ; Package Type: BGA, GREEN, BGA-48 ; Pins: 48 ; Logic Family: CMOS ; Supply Voltage: 1.8V ; Access Time: 85 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).

7P004FLD2100I15 : 2M X 16 FLASH 5V PROM CARD, 150 ns, XMA68. s: Memory Category: Flash, PROM ; Density: 33554 kbits ; Number of Words: 2000 k ; Bits per Word: 16 bits ; Package Type: CARD-68 ; Pins: 68 ; Supply Voltage: 5V ; Access Time: 150 ns ; Operating Temperature: -40 to 85 C (-40 to 185 F).

0-C     D-L     M-R     S-Z