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Details, datasheet, quote on part number:13PD100-TO
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Datasheet text preview:
High Speed InGaAs p-i-n Photodiode 13PD100-TO
The 13PD100-TO, an InGaAs photodiode with a 100µm-diameter photosensitive region packaged in a TO-46 header, is the largest standard device enabling a 1 GHz frequency cutoff. Planar semiconductor design and dielectric passivation provide low noise performance. Reliability is assured by hermetic sealing and 100% purge burn-in ( 200oC, 15 hours, Vr = 20V ). Chips can also be attached and wire bonded to customer-supplied or other specified packages. Headers are available with either a lensed or flat window cap.
Features
Planar Structure Dielectric Passivation 100% Purge Burn-In High Responsivity
Device Characteristics:
Parameters Test Conditions
-5V -5V 1300nm (-3dB) -
Min
0.5 1.15 0.8 -
Typ
-
Max
-20
Units
Volts
Operating Voltage Dark Current Capacitance Responsivity Rise/Fall Frequency Response Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature
2 nA pF 0.90 0.5 1.0 -
A/W ns GHz
Absolute Maximum Ratings
30 Volts 10 mA 500 µA o -40 C to + 85oC -40oC to + 85oC 250oC
829 Flynn Road, Camarillo, CA 93012
tel(805)445-4500
fax(805)445-4502
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