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Details, datasheet, quote on part number:13PD150-S
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Datasheet text preview:
High Performance InGaAs p-i-n Photodiode 13PD150-S
The 13PD150-S, an InGaAs photodiode with a 150µm photosensitive region mounted on a metalized ceramic substrate, is intended for moderate-to-high speed applications. Efficient coupling to multi-mode fiber in hybrid modules is enabled by the relatively large photosensitive area. Planar semiconductor design and dielectric passivation provide low noise performance. Reliability is assured by a 100% purge burn-in (200oC, 15 hours, Vr = 20V). Chips can also be attached and wire bonded to customer-supplied or other specified submounts.
Features
Planar Structure Dielectric Passivation 100% Purge Burn-In High Responsivity
Device Characteristics
Parameters
Operating Voltage Dark Current Capacitance Responsivity Rise/Fall Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature
Test Conditions
-5V -5V 1300nm -
Min
0.70 -
Typ
0.5 1.25 0.90 -
Max
-20 2.5 2 2
Units
Volts nA pF A/W ns
Absolute Maximum Ratings
20 Volts 5 mA 1 mA o -40 C to + 85oC -40oC to + 85oC 250oC
829 Flynn Road, Camarillo, CA 93012
tel (805) 445-4500
fax (805) 445-4502.
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