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Details, datasheet, quote on part number:AD8009ART-REEL7
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Datasheet text preview:
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FEATURES Ultrahigh Speed 5,500 V/ s Slew Rate, 4 V Step, G = +2 545 ps Rise Time, 2 V Step, G = +2 Large Signal Bandwidth 440 MHz, G = +2 320 MHz, G = +10 Small Signal Bandwidth (3 dB) 1 GHz, G = +1 700 MHz, G = +2 Settling Time 10 ns to 0.1%, 2 V Step, G = +2 Low Distortion Over Wide Bandwidth SFDR 44 dBc @ 150 MHz, G = +2, VO = 2 V p-p 41 dBc @ 150 MHz, G = +10, VO = 2 V p-p 3rd Order Intercept (3IP) 26 dBm @ 70 MHz, G = +10 18 dBm @ 150 MHz, G = +10 Good Video Specifications Gain Flatness 0.1 dB to 75 MHz 0.01% Differential Gain Error, RL = 150 0 H .01 Differential Phase Error, RL = 150 igh Output Drive 175 mA Output Load Drive 10 dBm with 38 dBc SFDR @ 70 MHz, G = +10 Supply Operation 5 V Voltage Supply 14 mA (Typ) Supply Current APPLICATIONS Pulse Amplifier IF/RF Gain Stage/Amplifiers High Resolution Video Graphics High Speed Instrumentations CCD Imaging Amplifier
2 1 0 G = +2 RF = 301 RL = 150
1 GHz, 5,500 V/ s Low Distortion Amplifier AD8009
FUNCTIONAL BLOCK DIAGRAM 8-Lead Plastic SOIC (SO-8)
NC 1 IN 2 +IN 3 VS 4 NC = NO CONNECT
5-Lead SOT-23 (RT-5)
AD8009
VOUT 1 VS 2 +IN 3
4 5
AD8009
8
NC
7 +VS 6 5 OUT NC
+ VS
IN
PRODUCT DESCRIPTION The AD8009 is an ultrahigh speed current feedback amplifier with a phenomenal 5,500 V/µs slew rate that results in a rise time of 545 ps, making it ideal as a pulse amplifier. The high slew rate reduces the effect of slew rate limiting and results in the large signal bandwidth of 440 MHz required for high resolution video graphic systems. Signal quality is maintained over a wide bandwidth with worst case distortion of 40 dBc @ 250 MHz (G = +10, 1 V p-p). For applications with multitone signals such as IF signal chains, the third order Intercept (3IP) of 12 dBm is achieved at the same frequency. This distortion performance coupled with the current feedback architecture make the AD8009 a flexible component for a gain stage amplifier in IF/RF signal chains. The AD8009 is capable of delivering over 175 mA of load current and will drive four back terminated video loads while maintaining low differential gain and phase error of 0.02% and 0.04° respectively. The high drive capability is also reflected in the ability to deliver 10 dBm of output power @ 70 MHz with 38 dBc SFDR. The AD8009 is available in a small SOIC package and will operate over the industrial temperature range 40°C to +85°C.
30 G=2 RF = 301 VO = 2V p-p 100 2ND, LOAD 3RD, 100 LOAD 80 3RD, 150 LOAD 90 2ND, LOAD
40
NORMALIZED GAIN dB
VO = 2Vpp 2 3 4 5 6 7 8
G = +10 RF = 200 RL = 100
DISTORTION dBc
1
50 60 150 70
100 1 100 10 FREQUENCY RESPONSE MHz 1000 1 10 FREQUENCY RESPONSE MHz 100 200
Figure 1. Large Signal Frequency Response; G = +2 & +10
Figure 2. Distortion vs. Frequency; G = +2
REV. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2000
AD200009GSPECIPackage: RTIONSfor(@=T +1,+25=C226 = for5 V, =R +2 100 R ,=for191Package:+10,=unless otherwise+1, +2, 8 for = +10, for RT FICA = 332 G = R , V G = and R for G = R 301 for G = noted.) R=
A S L F F F F F
Model DYNAMIC PERFORMANCE 3 dB Small Signal Bandwidth, VO = 0.2 V p-p R Package RT Package
Conditions
Min
AD8009AR Typ
Max
Units
Large Signal Bandwidth, VO = 2 V p-p Gain Flatness 0.1 dB, VO = 0.2 V p-p Slew Rate Settling Time to 0.1% Rise and Fall Time HARMONIC/NOISE PERFORMANCE SFDR G = +2, VO = 2 V p-p SFDR G = +10, VO = 2 V p-p Third Order Intercept (3IP) W.R.T. Output, G = +10 Input Voltage Noise Input Current Noise Differential Gain Error Differential Phase Error DC PERFORMANCE Input Offset Voltage
G = +1, RF = 301 G = +1, RF = 332 G = +2 G = +10 G = +2 G = +10 G = +2, RL = 150 G = +2, RL = 150 , 4 V Step G = +2, RL = 150 , 2 V Step G = +10, 2 V Step G = +2, RL = 150 , 4 V Step 5 MHz 70 MHz 150 MHz 5 MHz 70 MHz 150 MHz 70 MHz 150 MHz 250 MHz f = 10 MHz f = 10 MHz, +In f = 10 MHz, In NTSC, G = +2, RL = 150 NTSC, G = +2, RL = 37.5 NTSC, G = +2, RL = 150 NTSC, G = +2, RL = 37.5
480 300 390 235 45 4500
1000 845 700 350 440 320 75 5500 10 25 0.725 74 53 44 58 41 41 26 18 12 1.9 46 41 0.01 0.02 0.01 0.04 2
MHz MHz MHz MHz MHz MHz MHz V/µs ns ns ns dBc dBc dBc dBc dBc dBc dBm dBm dBm nV/Hz pA/Hz pA/Hz % % Degrees Degrees mV mV µV/°C ±µ A ±µ A ±µ A ±µ A k k k pF ±V dB V mA mA ±6 16 18 V mA mA dB
0.03 0.05 0.03 0.08 5 7 150 150
TMINTMAX Offset Voltage Drift Input Bias Current TMINTMAX +Input Bias Voltage TMINTMAX Open Loop Transresistance TMINTMAX INPUT CHARACTERISTICS Input Resistance Input Capacitance Input Common-Mode Voltage Range Common-Mode Rejection Ratio OUTPUT CHARACTERISTICS Output Voltage Swing Output Current Short Circuit Current POWER SUPPLY Operating Range Quiescent Current Power Supply Rejection Ratio
Specifications subject to change without notice.
90
4 50 75 50 75 250 170 110 8 2.6 3.8 52 ± 3.8 175 330
+Input Input +Input VCM = ± 2.5 50
± 3.7 RL = 10 , PD Package = 0.7 W 150
±4 14 TMINTMAX VS = ± 4 V to ± 6 V 64 70
2
REV. B
AD8009
ABSOLUTE MAXIMUM RATINGS 1 MAXIMUM POWER DISSIPATION
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12.6 V Internal Power Dissipation2 Small Outline Package (R) . . . . . . . . . . . . . . . . . 0.75 Watts Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ± VS Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ± 3.5 V Output Short Circuit Duration . . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves Storage Temperature Range R Package . . . . 65°C to +125°C Operating Temperature Range (A Grade) . . . 40°C to +85°C Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300°C
NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 Specification is for device in free air: 8-Lead SOIC Package: JA = 155°C/W.
The maximum power that can be safely dissipated by the AD8009 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately +150°C. Exceeding this limit temporarily may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of +175°C for an extended period can result in device failure. While the AD8009 is internally short circuit protected, this may not be sufficient to guarantee that the maximum junction temperature (+150°C) is not exceeded under all conditions. To ensure proper operation, it is necessary to observe the maximum power derating curves.
2.0
MAXIMUM POWER DISSIPATION Watts
TJ = +150°C
1.5 8-LEAD SOIC PACKAGE 1.0
0.5 5-LEAD SOT-23 PACKAGE
0 50 40 30 20 10 0 10 20 30 40 50 60 AMBIENT TEMPERATURE °C
70 80 90
Figure 3. Plot of Maximum Power Dissipation vs. Temperature
ORDERING GUIDE
Model AD8009AR AD8009AR-REEL AD8009ART AD8009ART-REEL AD8009ART-REEL7 AD8009-EB
Temperature Range 40°C to +85°C 40°C to +85°C 40°C to +85°C 40°C to +85°C 40°C to +85°C
Package Description 8-Lead SOIC 13" Tape and Reel 5-Lead SOT-23 13" Tape and Reel 7" Tape and Reel Evaluation Board
Package Option SO-8 SO-8 RT-5 RT-5 RT-5 SO-8
Branding Information
HKJ HKJ HKJ
CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8009 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. B
3
AD8009Typical Performance Characteristics
3 2 G = +1, RT 1
NORMALIZED GAIN dB
6.2
G = +1, R
6.1 6.0
GAIN FLATNESS dB
0 1 2 3 4 5 6 7 1 10 100 1000 R PACKAGE: RL = 100 VO = 200mV pp G = +1, +2: RF = 301 G = +10: RF = 200 RT PACKAGE: G = +1: RF = 332 G = +2: RF = 226 G = +10: RF = 191
5.9 5.8 5.7 5.6 5.5 5.4 5.3 5.2 1 10 100 FREQUENCY MHz 1000 G = +2 RF = 301 RL = 150 VO = 200mV pp
G = +2, R & RT G = +10, R & RT
FREQUENCY MHz
Figure 4. Frequency Response; G = +1, +2, +10, R and RT Packages
Figure 7. Gain Flatness; G = +2
8 7 6 5
22 21 20 19 GAIN dB
G = +2 RF = 301 RL = 150 VO AS SHOWN
4 3 2 1 0 1 2 1
18 17 16 15 14 13 12
4V pp 2V pp
G = +10 RF = 200 RL = 100 VO AS SHOWN
GAIN dB
2V pp
4V pp
10 100 FREQUENCY MHz
1000
1
10 100 FREQUENCY MHz
1000
Figure 5. Large Signal Frequency Response; G = +2
Figure 8. Large Signal Frequency Response; G = +10
8 7 6 5 GAIN dB 4 3 2 1 0 1 2 1 10 100 FREQUENCY MHz 1000 G = +2 RF = 301 RL = 150 VO = 2V pp 40 C 40 C +85 C
22 21 20 19 40 C +85 C
GAIN dB
18 17 16 15 14 13 12 1
+85 C
G = +10 RF = 200 RL = 100 VO = 2V pp
10 100 FREQUENCY MHz
1000
Figure 6. Large Signal Frequency Response vs. Temperature; G = +2
Figure 9. Large Signal Frequency Response vs. Temperature; G = +10
4
REV. B
AD8009
30 G=2 RF = 301 VO = 2V p-p 100 2ND, LOAD 3RD, 100 LOAD 80 3RD, 150 LOAD 90 100 1 10 FREQUENCY RESPONSE MHz 100 200 2ND, LOAD
30 35 40 G = +10 RF = 200 RL = 100 VO = 2V pp
40
2ND
50
DISTORTION dBc
DISTORTION dBc
45 50 55 3RD 60 65 70 75 80 5 10 FREQUENCY MHz 100 200
60 150 70
Figure 10. Distortion vs. Frequency; G = +2
Figure 13. Distortion vs. Frequency; G = +10
35 40 45 70MHz
DISTORTION dBc
35 50MHz 40 45 50 55 60 65 70 75 80
OUT
250MHz
50 DISTORTION dBc 55 60 65
200
70MHz
5MHz
5MHz
200 22.1 5 0 50 50 P
OUT
70 75 80 85 10 8 6 4 2 0 2
2
P 50 0 5 F
22.1 5
0
85 90 95 10 8 6 4 2 0 2 4
4
6
8
10
12
14
6
8
10
12
14
POUT dBm
POUT dBm
Figure 11. 2nd Harmonic Distortion vs. POUT; (G = +10)
igure 14. 3rd Harmonic Distortion vs. POUT; (G = +10)
0.02
50
G = +2 RF = 301
DIFF GAIN %
0.01 0.00 0.01 0.02
RL = 150
F
45
22.1
200 5 50 0 5
P
INTERCEPT POINT dBm
40
0
OUT
RL = 37.5 0 IRE RL = 37.5 100
35 30 25 20 15 10 10
DIFF PHASE Degrees
0.10
G = +2 0.05 RF = 301
0.00 RL = 150 0.05 0.10 0 100
IRE
100 FREQUENCY MHz
250
Figure 12. Differential Gain and Phase
igure 15. Two Tone, 3rd Order IMD Intercept vs. Frequency; G = +10
REV. B
5
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