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Details, datasheet, quote on part number:AD8010AR
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| Part: | AD8010AR |
| Category: | Analog & Mixed-Signal Processing => Amplifiers => Operational Amplifiers => High Speed => Single |
| Description: | Low Power, High Current Amplifier |
| Company: | Analog Devices |
| Datasheet: | Download AD8010AR datasheet File size : 192 kB |
| Request For quote: | Find where to buy AD8010AR
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Datasheet text preview:
a
FEATURES 200 mA of Output Current 9 Load SFDR 54 dBc @ 1 MHz Differential Gain Error 0.04%, f = 4.43 MHz Differential Phase Error 0.06 , f = 4.43 MHz Maintains Video Specifications Driving Eight Parallel 75 Loads 0.02% Differential Gain 0.03 Differential Phase 0.1 dB Gain Flatness to 60 MHz I HD 72 dBc @ 1 MHz, RL = 18.75 T P 1 3 42 dBm @ 5 MHz, RL = 18.75 2 dB Gain Compression 21 dBm @ 5 MHz, RL = 100 830 MHz 3 dB Bandwidth, G = +1, RL = 18.75 200 V/ s Slew Rate, RL = 18.75 5 ns Settling Time to 0.1% Available in 8-Lead DIP, 16-Lead Wide Body SOIC and Thermally Enhanced 8-Lead SOIC APPLICATIONS Video Distribution Amplifier VDSL, xDSL Line Driver Communications ATE Instrumentation
200 mA Output Current High-Speed Amplifier AD8010
CONNECTION DIAGRAMS 8-Lead DIP and SOIC
NC 1 IN 2 +IN 3 VS 4
AD8010
8 7 6 5
NC +VS OUT NC
NC = NO CONNECT
16-Lead Wide Body SOIC
NC 1 NC 2 IN 3 NC 4 +IN 5 NC 6 VS 7 NC 8
AD8010
16 15 14 13 12 11 10 9
NC NC +VS NC OUT NC NC NC
NC = NO CONNECT
PRODUCT DESCRIPTION
75 RF RG +5V
V
OUT1
The AD8010 is a low power, high current amplifier capable of delivering a minimum load drive of 175 mA. Signal performance such as 0.02% and 0.03° differential gain and phase error is maintained while driving eight 75 back terminated video lines. The current feedback amplifier features gain flatness to 60 MHz and 3 dB (G = +1) signal bandwidth of 230 MHz and only requires a typical of 15.5 mA supply current from ± 5 V supplies. These features make the AD8010 an ideal component for Video Distribution Amplifiers or as the drive amplifier within high data rate Digital Subscriber Line (VDSL and xDSL) systems. The AD8010 is an ideal component choice for any application that needs a driver that will maintain signal quality when driving low impedance loads. The AD8010 is offered in three package options: an 8-lead DIP, 16-lead wide body SOIC and a low thermal resistance 8-lead SOIC, and operates over the industrial temperature range of 40°C to +85°C.
VOUT2 VOUT3 VOUT4
VIN RT
RS
D8010
VOUT5 5V VOUT6 VOUT7 VOUT8 A 75
Figure 1. Video Distribution Amplifier
REV. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2000
RF = RG = 562
Model
= V, G = +2, R = AD8010SPECI=FICATION=S40(@C,25 C,=V +85 C5 unless otherwise18.75 , R (N-8), R = R 499 (R-8). T T noted)
S L F G MIN MAX
S+
= 150
, RF = RG = 604
Max
(R-16),
Unit MHz MHz MHz MHz dB V/µs ns ns
Conditions G = +1, VOUT = 0.2 V p-p G = +2, VOUT = 0.2 V p-p VOUT = 0.2 V p-p VOUT = 4 V p-p VOUT = 0.2 V p-p, < 5 MHz VOUT = 2 V p-p VOUT = 2 V p-p 0.1%, VOUT = 2 V p-p VOUT = 2 V p-p 1 MHz 5 MHz 10 MHz 10 MHz, RL = 39 20 MHz 1 MHz 5 MHz 10 MHz 10 MHz, RL = 39 20 MHz 5 MHz f = 10 kHz 5 MHz 5 MHz f = 10 kHz f = 10 kHz, +In f = 20 kHz, In f = 4.43 MHz, RL = 150 f = 4.43 MHz, RL = 18.75 f = 4.43 MHz, RL = 150 f = 4.43 MHz, RL =18.75
Min 180 130 30
Typ 230 190 60 90 0.02 800 2.0 25
DYNAMIC PERFORMANCE 3 dB Bandwidth 0.1 dB Bandwidth Large Signal Bandwidth Peaking Slew Rise and Fall Time Settling Time NOISE/HARMONIC PERFORMANCE Distortion 2nd Harmonic
3rd Harmonic
IMD IP3 1 dB Gain Compression Input Noise Voltage Input Noise Current Differential Gain Differential Phase DC PERFORMANCE Input Offset Voltage
73 58 53 67 44 77 63 57 63 50 73 42 21 2 3 20 0.02 0.02 0.02 0.03 5 12 15 135 200 12 20
dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc dBm dBm n V H z p A H z p A H z % % Degrees Degrees mV mV µV/°C µA µA µA µA k pF dB V k k
TMINTMAX Offset Drift Input Bias Current () TMINTMAX Input Bias Current (+) TMINTMAX INPUT CHARACTERISTICS Input Resistance Input Capacitance Common-Mode Rejection Ratio Input Common-Mode Voltage Range Open Loop Transresistance OUTPUT CHARACTERISTICS Output Voltage Swing RL = 18.75 RL = 150 Output Current Short-Circuit Current Capacitive Load Drive POWER SUPPLY Operating Range Quiescent Current Power Supply Rejection Ratio
Specifications subject to change without notice.
10 10 6
+Input Input V CM = ± 2 . 5 V V OUT = ± 2 . 5 V TMINTMAX 50 300 250
125 12.5 2.75 54 ± 2.5 500
RL = 9
± 2.1 ± 2.7 175
± 2.5 ± 3.0 200 240 40 ± 6.0 17 20
V V mA mA pF V mA mA dB dB
± 4.5 15.5 TMIN to TMAX +VS = +4 V to +6 V, VS = +5 V +VS = +5 V, VS = 4 V to 6 V 60 50 66 56
2
REV. B
AD8010
ABSOLUTE MAXIMUM RATINGS 1 MAXIMUM POWER DISSIPATION
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V Internal Power Dissipation2 Plastic Package (N) . . . . . . Observe Power Derating Curves Small Outline Package (R) . Observe Power Derating Curves Wide Body SOIC (R-16) . . . Observe Power Derating Curves Input Voltage (Common-Mode) . . . . . . . . . . . . . . . . . . . ± VS D i f f e r e n t i a l I n p u t V o l t a g e . . . . . . . . . . . . . . . . . . . . . . ± 1.2 V Output Short Circuit Duration . . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves Storage Temperature Range N, R . . . . . . . . 65°C to +125°C Operating Temperature Range (A Grade) . . 40°C to +85°C Lead Temperature Range (Soldering 10 sec) . . . . . . . . 300°C
NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 Specification is for device in free air: 8-Lead Plastic Package: JA = 90°C/W 8-Lead SOIC Package: JA = 122°C/W 16-Lead SOIC Package: JA = 73°C/W
3.0
MAXIMUM POWER DISSIPATION Watts
The maximum power that can be safely dissipated by the AD8010 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately +150°C. Temporarily exceeding this limit may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of +175°C for an extended period can result in device failure. While the AD8010 is internally short circuit protected, this may not be sufficient to guarantee that the maximum junction temperature (+150°C) is not exceeded under all conditions. To ensure proper operation, it is necessary to observe the maximum power derating curves.
TJ = 150 C 2.5 8-LEAD MINI-DIP PACKAGE 2.0 16-LEAD SOIC PACKAGE (WIDEBODY) 1.5
1.0
8-LEAD SOIC PACKAGE
0.5
0 50 40 3 0 2 0 1 0 0 1 0 20 3 0 4 0 5 0 6 0 7 0 8 0 9 0 AMBIENT TEMPERATURE C
Figure 2. Plot of Maximum Power Dissipation vs. Temperature
ORDERING GUIDE Model AD8010AN AD8010AR AD8010AR-16 AD8010AR-REEL AD8010AR-REEL7 AD8010AR-16-REEL AD8010AR-16-REEL7 Temperature Range 40°C to +85°C 40°C to +85°C 40°C to +85°C Package Description 8-Lead Plastic DIP 8-Lead Plastic SOIC 16-Lead Wide Body SOIC REEL SOIC REEL SOIC REEL SOIC REEL SOIC Package Options N-8 SO-8 R-16 13" REEL 7" REEL 13" REEL 7" REEL
CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8010 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. B
3
AD8010Typical Performance Characteristics
60 dG 50
PERCENTAGE OF UNITS
0.05 0.10 0.04 0.08 DIFFERENTIAL GAIN 0.03 DIFFERENTIAL PHASE 0.02 0.04 0.06
40 dG d IFFERENTIAL GAIN dG IN % G DIFFERENTIAL PHASE d IN Degrees dd D dG d 10 d d dG d d d d d
30
20
0.01
0.02
0
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 0.13 dG (%)/d Degrees
0
1
2
4
6 8 10 12 NUMBER OF VIDEO LOADS
14
16
0
Figure 3. Distribution of Differential Gain (dG) and Differential Phase (d); RL = 18.75
Figure 6. Differential Gain and Phase vs. Number of Video Loads Over Temperature (40°C to +85°C); f = 4.43 MHz
45 50 G = +2 VO = 2V p-p RL AS SHOWN 2ND RL = 18.75 3RD
INTERCEPT POINT dBm
45 40 35 30 25 20 15 10 5 1 10 FREQUENCY MHz 100 G = +2 RL = 18.75
HARMONIC DISTORTION dBc
55 60 65 70 75 80 85 90 95 1
3RD RL = 100 2ND
2
3 4 5 6 7 8 9 10 FREQUENCY MHz
20
Figure 4. Harmonic Distortion vs. Frequency; G = +2
Figure 7. Two-Tone, 3rd Order IMD Intercept vs. Frequency; G = +2, RL = 18.75
6.5
6.20 6.15 G = +2 RL = 18.75 VO = 0.2V p-p +85 C
4
G = +2 VO = 0.2V p-p NUMBER OF VIDEO LOADS AS SHOWN
6.4 6.3
GAIN FLATNESS dB
2 6 8
+25 C
GAIN FLATNESS dB
6.10 6.05 6.0 5.95 5.90 5.85 5.80 0.1 1 10 FREQUENCY MHz 100 500 40 C
6.2 6.1 6.0 5.9 1 5.8 5.7 5.6 5.5
1 10
10 12 14
100 1000 FREQUENCY MHz
Figure 5. Gain Flatness vs. Frequency Over Temperature (40°C to +85°C)
Figure 8. Gain Flatness vs. Frequency vs. Number of Video Loads
4
REV. B
DIFFERENTIAL PHASE Degrees
SAMPLE SIZE = 300 = +2 f = 4.43MHz (PAL) RL = 18.75
DIFFERENTIAL GAIN %
AD8010
5 POUT
INTERMODULATION DISTORTION dBm 0
4dBm
4dBm
10
MEASURE = 10dBm (FULL SCALE)
5 15 25 35 45 55 65 75 85 4.965 4.985 5.0 5.015 5.035 FREQUENCY MHz 69dBm 69dBm G = +2 RL = 18.75 fO = 5MHz f = 10kHz
20 PMEASURE dBm 30 40 50 60 70 80 90 0 1 2 3
G
GAIN = 6.6 RF 50 50 10 5 P 5 0
R
500kHz TONE SPACING FROM 500kHz TO 5.5MHz WITH 4 MISSING TONES
4 5 6 7 FREQUENCY MHz
8
9
10
Figure 9. Intermodulation Distortion
Figure 12. Multitone Distortion; RL = 100
35
TOTAL HARMONIC DISTORTION dBc
55 FREQUENCY = 5MHz G = +2 RL = AS SHOWN (SEE SCHEMATIC) 60
HARMONIC DISTORTION dBc
45
G = +2 VO = 2V p-p f = 5MHz
55 RL = 18.75 65 75 RF 85 95 RL = 100 RG 15 0 5 PIN RL1 = FOR RL = 100 RL1 = 23.1 FOR RL = 18.75 8 6 4 2 0 2 POUT dBm 0 R 4 6
L1
65
70 75 80 2ND 3RD
50
5
OUT
P0
85 90
105 10
8
10
12
15
100
200 300 LOAD
400
500
Figure 10. Total Harmonic Distortion vs. POUT; G = +2
Figure 13. Harmonic Distortion vs. Load
2 G = +1 1 G = +2 0 8.0 7.0 6.0 GAIN dB 5.0 4.0 12 3.0 8 2.0 1.0 0.0 1 10 100 FREQUENCY MHz 1000 G = +2 VO = 0.2V p-p NUMBER OF VIDEO LOADS AS SHOWN
4 1
NORMALIZED GAIN dB
1 2 3 4 5 6 7 0.1 GAIN AS SHOWN VO = 0.2V p-p RL = 18.75 G = +3
1
10 FREQUENCY MHz
100
1000
Figure 11. Small Signal Closed-Loop Frequency Response; RL = 18.75
Figure 14. Closed-Loop Frequency Response vs. Number of Video Loads
REV. B
5
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