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Details, datasheet, quote on part number:AD8011-EB
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| Part: | AD8011-EB |
| Category: | Analog & Mixed-Signal Processing => Amplifiers => High Speed/Video Amplifiers => Current Feedback |
| Description: | 300 Mhz, 1 ma Current Feedback Amplifier |
| Company: | Analog Devices |
| Datasheet: | Download AD8011-EB datasheet File size : 225 kB |
| Request For quote: | Find where to buy AD8011-EB
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Datasheet text preview:
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FEATURES Easy to Use Low Power 1 mA Power Supply Current (5 mW on +5 VS) High Speed and Fast Settling on +5 V 300 MHz, 3 dB Bandwidth (G = +1) 180 MHz, 3 dB Bandwidth (G = +2) 2000 V/ s Slew Rate 29 ns Settling Time to 0.1% Good Video Specifications (RL = 1 k , G = +2) Gain Flatness 0.1 dB to 25 MHz 0.02% Differential Gain Error 0.06 Differential Phase Error Low Distortion 70 dBc Worst Harmonic @ 5 MHz 62 dBc Worst Harmonic @ 20 MHz Single Supply Operation Fully Specified for +5 V Supply APPLICATIONS Power Sensitive, High Speed Systems Video Switchers Distribution Amplifiers A-to-D Driver Professional Cameras CCD Imaging Systems Ultrasound Equipment (Multichannel) PRODUCT DESCRIPTION
300 MHz, 1 mA Current Feedback Amplifier AD8011*
FUNCTIONAL BLOCK DIAGRAM 8-Lead Plastic DIP and SOIC
NC 1 IN 2 +IN 3 V 4 8 NC 7 V+
6 OUT
AD8011
5 NC
NC = NO CONNECT
amplifier. It also can be used to replace high-speed amplifiers consuming more power. The AD8011 is a current feedback amplifier and features gain flatness of 0.1 dB to 25 MHz while offering differential gain and phase error of 0.02% and 0.06° on a single +5 V supply. This makes the AD8011 ideal for professional video electronics such as cameras, video switchers or any high speed portable equipment. Additionally, the AD8011's low distortion and fast settling make it ideal for buffering high speed 8-, 10-, 12-bit A-to-D converters. The AD8011 offers very low power of 1 mA max and can run on single +5 V to +12 V supplies. All this is offered in a small 8-lead plastic DIP or 8-lead SOIC package. These features fit well with portable and battery-powered applications where size and power are critical. The AD8011 is available in the industrial temperature range of 40°C to +85°C.
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The AD8011 is a very low power, high-speed amplifier designed to operate on +5 V or ± 5 V supplies. With wide bandwidth, low distortion and low power, this device is ideal as a general-purpose
+5 +4 +3
NORMALIZED GAIN dB
G = +2 RF = 1k VS = +5V OR 5V VOUT = 200mV p-p
DISTORTION dBc
G = +2
3rd RL = 150
+2 +1 0 1 2 3 4 5 1 10 FREQUENCY MHz 100 500
FREQUENCY MHz 100 10 20 60
2nd RL = 150
80 2nd RL = 1k
3rd RL =1k
Figure 1. Frequency Response; G = +2, VS = +5 V or ±5 V
*Protected under Patent Number 5,537,079.
Figure 2. Distortion vs. Frequency; VS = ±5 V
REV. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2001
AD8011SPECIFICATIONS
DUAL SUPPLY (@ T = +25 C, V =
A S
5 V, G = +2, RF = 1 k , RL = 1 k , unless otherwise noted)
Conditions Min 340 180 20 AD8011A Typ 400 210 57 25 3500 1100 25 0.4 3.7 Max Units MHz MHz MHz MHz V/µs V/µs ns ns ns
Model DYNAMIC PERFORMANCE 3 dB Small Signal Bandwidth, VO < 1 V p-p 3 dB Small Signal Bandwidth, VO < 1 V p-p 3 dB Large Signal Bandwidth, VO = 5 V p-p Bandwidth for 0.1 dB Flatness Slew Rate Settling Time to 0.1% Rise and Fall Time NOISE/HARMONIC PERFORMANCE 2nd Harmonic
G = +1 G = +2 G = +10, RF = 500 G = +2 G = +2, VO = 4 V Step G = 1, VO = 4 V Step G = +2, VO = 2 V Step G = +2, VO = 2 V Step G = 1, VO = 2 V Step fC = 5 MHz, VO = 2 V p-p, G = +2 RL = 1 k RL = 150 RL = 1 k RL = 150 f = 10 kHz f = 10 kHz, +In In NTSC, G = +2, RL = 1 k RL = 150 NTSC, G = +2, RL = 1 k RL = 150
3rd Harmonic Input Voltage Noise Input Current Noise Differential Gain Error Differential Phase Error DC PERFORMANCE Input Offset Voltage
75 67 70 54 2 5 5 0.02 0.02 0.06 0.3 2 2 10 5 5 5 6 15 20 15 20
dB dB dB dB nV/ H z pA/Hz pA/Hz % % Degrees Degrees ± mV ± mV µV/°C ±µ A ±µ A ±µ A ±µ A k k k pF ±V dB ±V mA mA V mA dB
TMINTMAX Offset Drift Input Bias Current TMINTMAX +Input Bias Current TMINTMAX Open-Loop Transresistance TMINTMAX INPUT CHARACTERISTICS Input Resistance Input Capacitance Input Common-Mode Voltage Range Common-Mode Rejection Ratio Offset Voltage OUTPUT CHARACTERISTICS Output Voltage Swing Output Resistance Output Current Short Circuit Current POWER SUPPLY Operating Range Quiescent Current Power Supply Rejection Ratio
Specifications subject to change without notice.
800 550
1300
+Input +Input 3.8 V CM = ± 2 . 5 V 52 3.9 TMINTMAX 15
450 2.3 4.1 57 4.1 0.1 30 60
0.3
± 1.5 TMINTMAX Vs = ± 5 V ± 1 V 55 1.0 58
± 6.0 1.3
2
REV. B
AD8011 SINGLE SUPPLY
Model Conditions DYNAMIC PERFORMANCE 3 dB Small Signal Bandwidth, VO < 0.5 V p-p 3 dB Small Signal Bandwidth, VO < 0.5 V p-p 3 dB Large Signal Bandwidth, VO = 2.5 V p-p Bandwidth for 0.1 dB Flatness Slew Rate Settling Time to 0.1% Rise and Fall Time NOISE/HARMONIC PERFORMANCE 2nd Harmonic G = +1 G = +2 G = +10, RF = 500 G = +2 G = +2, VO = 2 V Step G = 1, VO = 2 V Step G = +2, VO = 2 V Step G = +2, VO = 2 V Step G = 1, VO = 2 V Step fC = 5 MHz, VO = 2 V p-p, G = +2 RL = 1 k RL = 150 RL = 1 k RL = 150 f = 10 kHz f = 10 kHz, +In In NTSC, G = +2, RL = 1 k R L = 150 NTSC, G = +2, RL = 1 k RL = 150 Min 270 150 15
(@ TA = +25 C, VS = +5 V, G = +2, RF = 1 k , VCM = 2.5 V, RL = 1 k , unless otherwise noted)
AD8011A Typ 328 180 57 20 2000 500 29 0.6 4 Max Units MHz MHz MHz MHz V/µs V/µs ns ns ns
3rd Harmonic Input Voltage Noise Input Current Noise Differential Gain Error Differential Phase Error DC PERFORMANCE Input Offset Voltage
84 67 76 54 2 5 5 0.02 0.6 0.06 0.8 2 2 10 5 5 5 6 15 20 15 20
dB dB dB dB nV/ H z pA/Hz pA/Hz % % Degrees Degrees mV mV µV/°C ±µ A ±µ A ±µ A ±µ A k k k pF V dB +V mA mA V mA dB
TMINTMAX Offset Drift Input Bias Current TMINTMAX +Input Bias Current TMINTMAX Open-Loop Transresistance TMINTMAX INPUT CHARACTERISTICS Input Resistance Input Capacitance Input Common-Mode Voltage Range Common-Mode Rejection Ratio Offset Voltage OUTPUT CHARACTERISTICS Output Voltage Swing Output Resistance Output Current Short Circuit Current POWER SUPPLY Operating Range Quiescent Current Power Supply Rejection Ratio
Specifications subject to change without notice.
800 550
1300
+Input +Input 1.5 to 3.5 VCM = 1.5 V to 3.5 V 52 1.2 to 3.8 TMINTMAX 15
450 2.3 1.2 to 3.8 57 0.9 to 4.1 0.1 30 50
0.3
+3 TMINTMAX Vs = ± 1 V 55 0.8 58
+12 1.15
REV. B
3
AD8011
ABSOLUTE MAXIMUM RATINGS 1 MAXIMUM POWER DISSIPATION
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V Internal Power Dissipation2 Plastic DIP Package (N) . . . . . . . . Observe Derating Curves Small Outline Package (R) . . . . . . . Observe Derating Curves Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ± VS Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ± 2.5 V Output Short Circuit Duration . . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves Storage Temperature Range (N, R) . . . . . . . . 65°C to +125°C Operating Temperature Range (A Grade) . . . 40°C to +85°C Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300°C
NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 Specification is for device in free air: 8-Lead Plastic DIP Package: JA = 90°C/W 8-Lead SOIC Package: JA = 155°C/W
The maximum power that can be safely dissipated by the AD8011 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately +150°C. Exceeding this limit temporarily may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of +175°C for an extended period can result in device failure. While the AD8011 is internally short circuit protected, this may not be sufficient to guarantee that the maximum junction temperature is not exceeded under all conditions. To ensure proper operation, it is necessary to observe the maximum power derating curves (shown below in Figure 3).
2.0 TJ = +150 C
MAXIMUM POWER DISSIPATION Watts
8-LEAD PLASTIC DIP PACKAGE 1.5
1.0
8-LEAD SOIC PACKAGE 0.5
0 50 40 30 20 10
0
10
20 30
40
50
60
70 80
90
AMBIENT TEMPERATURE C
Figure 3. Maximum Power Dissipation vs. Temperature
ORDERING GUIDE Temperature Range 40°C to +85°C 40°C to +85°C 40°C to +85°C 40°C to +85°C Package Description 8-Lead Plastic DIP 8-Lead SOIC 13" Tape and Reel 7" Tape and Reel Evaluation Board Package Option N-8 SO-8 SO-8 SO-8
Model AD8011AN AD8011AR AD8011AR-REEL AD8011AR-REEL7 AD8011-EB
CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8011 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
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REV. B
AD8011
1k 1
IN
k RL 1k VOUT
V
IN
1k 52.3 F 1
k RL 1k VOUT
V
50
+VS 0.01 F 0.01 F 10 F 10 F VS
0.01 F 0.01 F 10 F 10 F
+VS
VS
Figure 4. Test Circuit; Gain = +2
igure 7. Test Circuit; Gain = 1
Figure 5.* 100 mV Step Response; G = +2, VS = ±2.5 V or ±5 V
Figure 8.* 100 mV Step Response; G = 1, VS = ±2.5 V or ±5 V
Figure 6.* Step Response; G = +2, VS = ±2.5 V (2 V Step) and ±5 V (4 V Step)
Figure 9.* Step Response; G = 1, VS = ±2.5 V (2 V Step) and ±5 V (4 V Step)
*NOTE: VS = ± 2.5 V operation is identical to V S = +5 V single supply operation.
REV. B
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