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Details, datasheet, quote on part number:AD8011AN
 
 
Part:AD8011AN
Description:300 Mhz, 1 ma Current Feedback Amplifier
Company:Analog Devices
Datasheet:Download AD8011AN datasheet   File size : 417 kB
Request For quote:  Find where to buy AD8011AN
 



Datasheet text preview:
a
FEATURES Easy to Use Low Power 1 mA Power Supply Current (5 mW on +5 VS) High Speed and Fast Settling on +5 V 300 MHz, ­3 dB Bandwidth (G = +1) 180 MHz, ­3 dB Bandwidth (G = +2) 2000 V/µs Slew Rate 29 ns Settling Time to 0.1% Good Video Specifications (RL = 1 k, G = +2) Gain Flatness 0.1 dB to 25 MHz 0.02% Differential Gain Error 0.06 ° Differential Phase Error Low Distortion ­70 dBc Worst Harmonic @ 5 MHz ­62 dBc Worst Harmonic @ 20 MHz Single Supply Operation Fully Specified for +5 V Supply APPLICATIONS Power Sensitive, High Speed Systems Video Switchers Distribution Amplifiers A-to-D Driver Professional Cameras CCD Imaging Systems Ultrasound Equipment (Multichannel) PRODUCT DESCRIPTION

300 MHz, 1 mA Current Feedback Amplifier AD8011*
FUNCTIONAL BLOCK DIAGRAM 8-Pin Plastic Mini-DIP and SOIC
NC 1 ­IN 2 +IN 3 V­ 4 8 NC 7 V+ 6 OUT

AD8011

5 NC

NC = NO CONNECT

pose amplifier. It also can be used to replace high speed amplifiers consuming more power. The AD8011 is a current feedback amplifier and features gain flatness of 0.1 dB to 25 MHz while offering differential gain and phase error of 0.02% and 0.06° on a single +5 V supply. This makes the AD8011 ideal for professional video electronics such as cameras, video switchers or any high speed portable equipment. Additionally, the AD8011's low distortion and fast settling make it ideal for buffering high speed 8-, 10-, 12-bit A-to-D converters. The AD8011 offers very low power of 1 mA max and can run on single +5 V to +12 V supplies. All this is offered in a small 8-pin DIP or 8-pin SOIC package. These features fit well with portable and battery powered applications where size and power are critical. The AD8011 is available in the industrial temperature range of ­40°C to +85°C.
­40

The AD8011 is a very low power, high speed amplifier designed to operate on +5 V or ± 5 V supplies. With wide bandwidth, low distortion and low power, this device is ideal as a general pur+5 +4 +3 G = +2 RF = 1k VS = +5V OR ±5V VOUT = 200mV p-p

G = +2

3rd RL = 150

NORMALIZED GAIN ­ dB

+2 +1 0 ­1 ­2 ­3 ­4 ­5 1

DISTORTION ­ dBc

­60

2nd RL = 150

­80 2nd RL = 1k

3rd RL =1k

10 FREQUENCY ­ MHz

100

500

­100 1 FREQUENCY ­ MHz 10 20

Figure 1. Frequency Response; G = +2, VS = +5 V or ±5 V
*Patent pending.

Figure 2. Distortion vs. Frequency; VS = ±5 V

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Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. © Analog Devices, Inc., 1995 One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A. Tel: 617/329-4700

AD8011­SPECIFICATIONS
DUAL SUPPLY (@ T = +25°C, V = ±5 V, G = +2, R = 1 k, R = 1 k, unless otherwise noted)
A S F L

Model Conditions DYNAMIC PERFORMANCE ­3 dB Small Signal Bandwidth, VO < 1 V p-p ­3 dB Small Signal Bandwidth, VO < 1 V p-p ­3 dB Large Signal Bandwidth, VO = 5 V p-p Bandwidth for 0.1 dB Flatness Slew Rate Settling Time to 0.1% Rise and Fall Time NOISE/HARMONIC PERFORMANCE 2nd Harmonic G = +1 G = +2 G = +10, RF = 500 G = +2 G = +2, VO = 4 V Step G = ­1, VO = 4 V Step G = +2, VO = 2 V Step G = +2, VO = 2 V Step G = ­1, VO = 2 V Step fC = 5 MHz, VO = 2 V p-p, G = +2 RL = 1 k RL = 150 RL = 1 k RL = 150 f = 10 kHz f = 10 kHz, +In ­In NTSC, G = +2, RL = 1 k R L = 150 NTSC, G = +2, RL = 1 k RL = 150 Min 340 180 20

AD8011A Typ 400 210 57 25 3500 1100 25 0.4 3.7

Max

Units MHz MHz MHz MHz V/µs V/µs ns ns ns

3rd Harmonic Input Voltage Noise Input Current Noise Differential Gain Error Differential Phase Error DC PERFORMANCE Input Offset Voltage

­75 ­67 ­70 ­54 2 5 5 0.02 0.02 0.06 0.3 2 2 10 5 5 5 6 15 20 15 20

dB dB dB dB nV/ H z pA/ H z p A / H z % % Degrees Degrees ± mV ± mV µV/°C ±µ A ±µ A ±µ A ±µ A k k k pF ±V dB ±V mA mA V mA dB

T M I N­ T M A X Offset Drift ­Input Bias Current T M I N­ T M A X +Input Bias Current T M I N­ T M A X Open-Loop Transresistance T M I N­ T M A X INPUT CHARACTERISTICS Input Resistance Input Capacitance Input Common-Mode Voltage Range Common-Mode Rejection Ratio Offset Voltage OUTPUT CHARACTERISTICS Output Voltage Swing Output Resistance Output Current Short Circuit Current POWER SUPPLY Operating Range Quiescent Current Power Supply Rejection Ratio
Specifications subject to change without notice.

800 550

1300

+Input +Input 3.8 VC M = ± 2 . 5 V ­52 3.9 T M I N­ T M A X 15

450 2.3 4.1 ­57 4.1 0.1 30 60

0.3

± 1.5 T M I N­ TM A X Vs = ± 5 V ± 1 V 55 1.0 58

± 6.0 1.2

­2­

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AD8011 SINGLE SUPPLY (@ T = +25°C, V = +5 V, G = +2, R = 1 k, V
A S F CM

= 2.5 V, RL = 1 k, unless otherwise noted)
Min 270 150 15 AD8011A Typ 328 180 57 20 2000 500 29 0.6 4 Max Units MHz MHz MHz MHz V/µs V/µs ns ns ns

Model Conditions DYNAMIC PERFORMANCE ­3 dB Small Signal Bandwidth, VO < 0.5 V p-p ­3 dB Small Signal Bandwidth, VO < 0.5 V p-p ­3 dB Large Signal Bandwidth, VO = 2.5 V p-p Bandwidth for 0.1 dB Flatness Slew Rate Settling Time to 0.1% Rise and Fall Time NOISE/HARMONIC PERFORMANCE 2nd Harmonic G = +1 G = +2 G = +10, RF = 500 G = +2 G = +2, VO = 2 V Step G = ­1, VO = 2 V Step G = +2, VO = 2 V Step G = +2, VO = 2 V Step G = ­1, VO = 2 V Step fC = 5 MHz, VO = 2 V p-p, G = +2 RL = 1 k RL = 150 RL = 1 k RL = 150 f = 10 kHz f = 10 kHz, +In ­In NTSC, G = +2, RL = 1 k R L = 150 NTSC, G = +2, RL = 1 k RL = 150

3rd Harmonic Input Voltage Noise Input Current Noise Differential Gain Error Differential Phase Error DC PERFORMANCE Input Offset Voltage

­84 ­67 ­76 ­54 2 5 5 0.02 0.6 0.06 0.8 2 2 10 5 5 5 6 15 20 15 20

dB dB dB dB nV/ H z pA/ H z p A / H z % % Degrees Degrees mV mV µV/°C ±µ A ±µ A ±µ A ±µ A k k k pF V dB +V mA mA V mA dB

T M I N ­ TM A X Offset Drift ­Input Bias Current T M I N ­ TM A X +Input Bias Current T M I N ­ TM A X Open-Loop Transresistance T M I N ­ TM A X INPUT CHARACTERISTICS Input Resistance Input Capacitance Input Common-Mode Voltage Range Common-Mode Rejection Ratio Offset Voltage OUTPUT CHARACTERISTICS Output Voltage Swing Output Resistance Output Current Short Circuit Current POWER SUPPLY Operating Range Quiescent Current Power Supply Rejection Ratio
Specifications subject to change without notice.

800 550

1300

+Input +Input 1.5 to 3.5 VCM = 1.5 V to 3.5 V ­52 1.2 to 3.8 T M I N ­ TM A X 15

450 2.3 1.2 to 3.8 ­57 0.9 to 4.1 0.1 30 50

0.3

+3 T M I N ­ TM A X V s = ± 1 V 55 0.8 58

+12 1.0

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­3­

AD8011
ABSOLUTE MAXIMUM RATINGS 1 MAXIMUM POWER DISSIPATION

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V Internal Power Dissipation2 Plastic Package (N) . . . . . . . . . . . . Observe Derating Curves Small Outline Package (R) . . . . . . . Observe Derating Curves Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ± VS Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ± 2.5 V Output Short Circuit Duration . . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves Storage Temperature Range (N, R) . . . . . . . . ­65°C to +125°C Operating Temperature Range (A Grade) . . . ­ 40°C to +85°C Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300°C
NOTES 1 Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 Specification is for device in free air: 8-Pin Plastic Package: JA = 90°C/Watt 8-Pin SOIC Package: JA = 140°C/Watt

The maximum power that can be safely dissipated by the AD8011 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately +150°C. Exceeding this limit temporarily may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of +175°C for an extended period can result in device failure. While the AD8011 is internally short circuit protected, this may not be sufficient to guarantee that the maximum junction temperature is not exceeded under all conditions. To ensure proper operation, it is necessary to observe the maximum power derating curves (shown below in Figure 3).
2.0 MAXIMUM POWER DISSIPATION ­ Watts TJ = +150°C 8-PIN MINI-DIP PACKAGE 1.5

ORDERING GUIDE

Model AD8011AN AD8011AR AD8011-EB

Temperature Range ­ 40°C to +85°C ­ 40°C to +85°C

Package Option 8-Pin Plastic DIP 8-Pin SOIC Eval Board, SOIC, G = +2

1.0

8-PIN SOIC PACKAGE 0.5

0 ­50 ­40 ­30 ­20 ­10 0 10 20 30 40 50 60 70 AMBIENT TEMPERATURE ­ °C 80 90

Figure 3. Maximum Power Dissipation vs. Temperature
CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8011 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!
ESD SENSITIVE DEVICE

­4­

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AD8011
1k 1k RL 1k VIN 50 0.01µF 0.01µF 10µF 10µF ­VS VOUT VIN 52.3 +VS 0.01µF 0.01µF 10µF 10µF ­VS 1k 1k RL 1k VOUT

+VS

Figure 4. Test Circuit; Gain = +2

Figure 7. Test Circuit; Gain = ­1

20mV

5ns

20mV

5ns

Figure 5.* 100 mV Step Response; G = +2, VS = ±2.5 V or ±5 V

Figure 8.* 100 mV Step Response; G = ­1, VS = ±2.5 V or ±5 V

4V STEP
4V STEP

2V STEP

2V STEP

800mV

10ns

800mV

10ns

Figure 6.* Step Response; G = +2, VS = ±2.5 V (2 V Step) and ±5 V (4 V Step)

Figure 9.* Step Response; G = ­1, VS = ±2.5 V (2 V Step) and ±5 V (4 V Step)

*NOTE: VS = ± 2.5 V operation is identical to V S = +5 V single supply operation.

REV. 0

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