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Details, datasheet, quote on part number:AD8012AR
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Datasheet text preview:
a
FEATURES Low Power 1.7 mA/Amplifier Supply Current Fully Specified for 5 V and +5 V Supplies High Output Current, 125 mA High Speed 350 MHz, 3 dB Bandwidth (G = +1) 150 MHz, 3 dB Bandwidth (G = +2) 2,250 V/ s Slew Rate 20 ns Settling Time to 0.1% Low Distortion 72 dBc Worst Harmonic @ 500 kHz, R L = 100 G 66 dBc Worst Harmonic @ 5 MHz, RL = 1 k ood Video Specifications (RL = 1 k , G = +2) 0.02% Differential Gain Error 0.06 Differential Phase Error Gain Flatness 0.1 dB to 40 MHz 60 ns Overdrive Recovery Low Offset Voltage, 1.5 mV Low Voltage Noise, 2.5 nV/Hz Available in 8-Lead SOIC and 8-Lead microSOIC APPLICATIONS X DSL, HDSL Line Driver ADC Buffer Professional Cameras CCD Imaging System Ultrasound Equipment Digital Camera PRODUCT DESCRIPTION
DISTORTION dBc OUT1 IN1 +IN1 VS
Dual 350 MHz Low Power Amplifier AD8012*
FUNCTIONAL BLOCK DIAGRAM
1 2 3 4 8 +VS 7 OUT2 6 IN2
AD8012
5 +IN2
40 G = +2 VOUT = 2V p-p RF = 750
50
60
70
3rd
80 2nd
The AD8012 is a dual low power current feedback amplifier capable of providing 350 MHz bandwidth while using only 1.7 mA per amplifier. It is intended for use in high frequency, wide dynamic range systems where low distortion, high speed are essential and low power is critical. With only 1.7 mA of supply current, the AD8012 also offers exceptional ac specs such as 20 ns settling time and 2,250 V/µs slew rate. The video specifications are 0.02% differential gain and 0.06 degree differential phase, excellent for such a low power amplifier. In addition, the AD8012 has a low offset of 1.5 mV. The AD8012 is well suited for any application that requires high performance with minimal power. The product is available in standard 8-lead SOIC or microSOIC packages and operates over the industrial temperature range 40°C to +85°C.
90
10
100 RL
1k
Figure 1. Distortion vs. Load Resistance, VS = ±5 V, Frequency = 500 kHz
+V S + AMP 1 R1 +
VIN
VREF
RL = 100 OR 135 R2
V
OUT
LINE POWER IN dB
VS
Np:Ns TRANSFORMER
Figure 2. Differential Drive Circuit for XDSL Applications
*Protected under U.S. Patent Number 5,537,079.
REV. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 1999
AD8012SPECIFICATIONS
DUAL SUPPLY (@ T = +25 C, V =
A S
5 V, G = +2, RL = 100
Conditions
, RF = RG = 750
, unless otherwise noted)
Min 270 95 Typ 350 150 90 40/23 75 2,250 3 20 35 60 Max Units MHz MHz MHz MHz MHz V/µs ns ns ns ns
Parameter DYNAMIC PERFORMANCE 3 dB Small Signal Bandwidth
0.1 dB Bandwidth Large Signal Bandwidth Slew Rate Rise and Fall Time Settling Time Overdrive Recovery NOISE/HARMONIC PERFORMANCE Distortion 2nd Harmonic 3rd Harmonic Output IP3 IMD Crosstalk Input Voltage Noise Input Current Noise Differential Gain Differential Phase DC PERFORMANCE Input Offset Voltage Open-Loop Transimpedance INPUT CHARACTERISTICS Input Resistance Input Capacitance Input Bias Current Common-Mode Rejection Ratio Input Common-Mode Voltage Range OUTPUT CHARACTERISTICS Output Resistance Output Voltage Swing Output Current Short Circuit Current POWER SUPPLY Supply Current/Amp Operating Range Power Supply Rejection Ratio
Specifications subject to change without notice.
G = +1, VOUT < 0.4 V p-p, RL = 1 k G = +2, VOUT < 0.4 V p-p, RL = 1 k G = +2, VOUT < 0.4 V p-p, RL = 100 VOUT < 0.4 V p-p, RL = 1 k/100 VOUT = 4 V p-p VOUT = 4 V p-p VOUT = 2 V p-p 0.1%, VOUT = 2 V p-p 0.02%, VOUT = 2 V p-p 2× Overdrive VOUT = 2 V p-p, G = +2 500 kHz, RL = 1 k/100 5 MHz, RL = 1 k/100 500 kHz, RL = 1 k/100 5 MHz, RL = 1 k/100 500 kHz, f = 10 kHz, RL = 1 k/100 500 kHz, f = 10 kHz, RL = 1 k/100 5 MHz, RL = 100 f = 10 kHz f = 10 kHz, +Input, Input f = 3.58 MHz, RL = 150 /1 k, G = +2 f = 3.58 MHz, RL = 150 /1 k, G = +2
89/73 78/62 84/72 66/52 30/40 79/77 70 2.5 15 0.02/0.02 0.3/0.06 ± 1.5 ±4 ±5
dBc dBc dBc dBc dBm dBc dB n V / H z pA/ Hz % Degrees mV mV k k k pF µA µA dB V V mA mA 1.8 1.9 ± 6.0 mA mA V dB
TMIN T MAX VOUT = ±2 V, RL = 100 TMIN T MAX +Input +Input +Input, Input +Input, Input, TMIN T MAX V CM = ± 2 . 5 V
240 200
500
450 2.3 ±3 56 ± 3.8 60 ± 4.1 0.1 ±4 125 500 1.7
± 12 ± 15
G = +2 TMIN T MAX
± 3.85 70
TMIN T MAX Dual Supply
± 1.5 58
60
2
REV. A
AD8012 SINGLE SUPPLY (@ T +25 C, V
A S
= +5 V, G = +2, RL = 100
Conditions
, R F = RG = 750
, unless otherwise noted)
Min 220 90 Typ 300 140 85 43/24 60 1,200 2 25 40 60 Max Units MHz MHz MHz MHz MHz V/µs ns ns ns ns
Parameter DYNAMIC PERFORMANCE 3 dB Small Signal Bandwidth
0.1 dB Bandwidth Large Signal Bandwidth Slew Rate Rise and Fall Time Settling Time Overdrive Recovery NOISE/HARMONIC PERFORMANCE Distortion 2nd Harmonic 3rd Harmonic Output IP3 IMD Crosstalk Input Voltage Noise Input Current Noise Differential Gain Differential Phase DC PERFORMANCE Input Offset Voltage Open-Loop Transimpedance INPUT CHARACTERISTICS Input Resistance Input Capacitance Input Bias Current Common-Mode Rejection Ratio Input Common-Mode Voltage Range OUTPUT CHARACTERISTICS Output Resistance Output Voltage Swing Output Current Short Circuit Current POWER SUPPLY Supply Current/Amp Operating Range Power Supply Rejection Ratio
Specifications subject to change without notice.
G = +1, VOUT < 0.4 V p-p, RL = 1 k G = +2, VOUT < 0.4 V p-p, RL = 1 k G = +2, VOUT < 0.4 V p-p, RL = 100 VOUT < 0.4 V p-p, RL = 1 k/100 VOUT = 2 V p-p VOUT = 3 V p-p VOUT = 2 V p-p 0.1%, VOUT = 2 V p-p 0.02%, VOUT = 2 V p-p 2× Overdrive VOUT = 2 V p-p, G = +2 500 kHz, RL = 1 k/100 5 MHz, RL = 1 k/100 500 kHz, RL = 1 k/100 5 MHz, RL = 1 k/100 500 kHz, RL = 1 k/100 500 kHz, RL = 1 k/100 5 MHz, RL = 100 f = 10 kHz f = 10 kHz, +Input, Input Black Level Clamped to +2 V, f = 3.58 MHz RL = 150 /1 k RL = 150 /1 k
87/71 77/61 89/72 78/52 30/40 77/80 70 2.5 15 0.03/0.03 0.4/0.08 ±1 ±3 ±4
dBc dBc dBc dBc dBm dBc dB n V / H z pA/ Hz % Degrees mV mV k k k pF µA µA dB V V mA mA 1.75 1.85 12 mA mA V dB
TMIN T MAX VOUT = 2 V p-p, RL = 100 TMIN T MAX +Input +Input +Input, Input +Input, Input, TMIN T MAX VCM = 1.5 V to 3.5 V
200 150
400
450 2.3 ±3 56 1.5 to 3.5 60 1.2 to 3.8 0.1 0.9 to 4.2 100 500 1.55
± 12 ± 15
G = +2 TMIN T MAX 1 to 4 50
TMIN T MAX Single Supply
3 58
60
REV. A
3
AD8012
ABSOLUTE MAXIMUM RATINGS 1 MAXIMUM POWER DISSIPATION
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V Internal Power Dissipation2 Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . 0.8 W microSOIC Package (RM) . . . . . . . . . . . . . . . . . . . . . 0.6 W Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . ± VS Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ± 2.5 V Output Short Circuit Duration . . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves Storage Temperature Range RM, R . . . . . . 65°C to +125°C Operating Temperature Range (A Grade) . . 40°C to +85°C Lead Temperature Range (Soldering 10 sec) . . . . . . . +300°C
NOTES 1Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2Specification is for device in free air at +25 °C 8-Lead SOIC Package: JA = 155°C/W 8-Lead microSOIC Package: JA = 200°C/W
The maximum power that can be safely dissipated by the AD8012 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately +150°C. Temporarily exceeding this limit may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of +175°C for an extended period can result in device failure. The output stage of the AD8012 is designed for maximum load current capability. As a result, shorting the output to common can cause the AD8012 to source or sink 500 mA. To ensure proper operation, it is necessary to observe the maximum power derating curves. Direct connection of the output to either power supply rail can destroy the device.
2.0 MAXIMUM POWER DISSIPATION Watts TJ = +150 C 1.5 8-LEAD SOIC PACKAGE
1.0
0.5
8-LEAD microSOIC
0 50 40 30 20 10 0 10 20 30 40 50 60 70 AMBIENT TEMPERATURE C
80 90
Figure 3. Plot of Maximum Power Dissipation vs. Temperature for AD8012
CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8012 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
ORDERING GUIDE Temperature Range 40°C to +85°C 40°C to +85°C 40°C to +85°C 40°C to +85°C 40°C to +85°C 40°C to +85°C Package Description 8-Lead SOIC 13" Tape and Reel 7" Tape and Reel 8-Lead microSOIC 13" Tape and Reel 7" Tape and Reel Package Options SO-8 SO-8 SO-8 RM-08 RM-08 RM-08 Brand Code
Model AD8012AR AD8012AR-REEL AD8012AR-REEL7 AD8012ARM AD8012ARM-REEL AD8012ARM-REEL7
H6A H6A H6A
4
REV. A
Typical Performance Characteristics AD8012
750 750 VOUT RL VIN 49.9 0.1 F 0.1 F + + 10 F 10 F VS + VIN 53.6 VS 0.1 F 0.1 F + + 10 F 10 F VS RL 750 750 VOUT + VS
Figure 4. Test Circuit; Gain = +2
Figure 7. Test Circuit; Gain = 1
20mV
5ns
20mV
5ns
Figure 5.* 100 mV Step Response; G = +2, VS = ±2.5 V or ± 5 V, RL = 1 k
Figure 8.* 100 mV Step Response; G = 1, V S = ±2.5 V or ± 5 V, RL = 1 k
1V
10ns
1V
10ns
Figure 6. 4 V Step Response; G = +2, V S = ±5 V, RL = 1 k
Figure 9. 4 V Step Response; G = 1, VS = ±5 V, RL = 1 k
*NOTE: VS = ± 2.5 V operation is identical to VS = +5 V single supply operation.
REV. A
5
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