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Details, datasheet, quote on part number:AD8014A
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Datasheet text preview:
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FEATURES Low Cost Low Power: 1.15 mA Max for 5 V Supply High Speed 400 MHz, 3 dB Bandwidth (G = +1) 4000 V/ s Slew Rate 60 ns Overload Recovery Fast Settling Time of 24 ns Drive Video Signals on 50 Lines Very Low Noise 3.5 nV/Hz and 5 pA/Hz 5 nV/Hz Total Input Referred Noise @ G = +3 w/500 F eedback Resistor Operates on +4.5 V to +12 V Supplies Low Distortion 70 dB THD @ 5 MHz Low, Temperature-Stable DC Offset Available in SOIC-8 and SOT-23-5 APPLICATIONS Photo-Diode Preamp Professional and Portable Cameras Hand Sets DVD/CD Handheld Instruments A-to-D Driver Any Power-Sensitive High Speed System PRODUCT DESCRIPTION
400 MHz Low Power High Performance Amplifier AD8014
FUNCTIONAL BLOCK DIAGRAMS SOIC-8 (R) SOT-23-5 (RT)
8 NC 7 + VS 6 VOUT VOUT 1 V S 2 +IN 3
4 IN
NC 1 IN 2
AD8014
5 +V S
+IN 3
VS 4
AD8014
5 NC
NC = NO CONNECT
The AD8014 is a very high speed amplifier with 400 MHz, 3 dB bandwidth, 4000 V/µs slew rate, and 24 ns settling time. The AD8014 is a very stable and easy to use amplifier with fast overload recovery. The AD8014 has extremely low voltage and current noise, as well as low distortion, making it ideal for use in wide-band signal processing applications. For a current feedback amplifier, the AD8014 has extremely low offset voltage and input bias specifications as well as low drift. The input bias current into either input is less than 15 µA at +25°C with a typical drift of less than 50 nA/°C over the industrial temperature range. The offset voltage is 5 mV max with a typical drift less than 10 µV/°C. For a low power amplifier, the AD8014 has very good drive capability with the ability to drive 2 V p-p video signals on 75 or 50 series terminated lines and still maintain more than 135 MHz, 3 dB bandwidth.
The AD8014 is a revolutionary current feedback operational amplifier that attains new levels of combined bandwidth, power, output drive and distortion. Analog Devices, Inc. uses a proprietary circuit architecture to enable the highest performance amplifier at the lowest power. Not only is it technically superior, but is low priced, for use in consumer electronics. This general purpose amplifier is ideal for a wide variety of applications including battery operated equipment.
REV. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 1999
AD8014SPECIFICATIONS (@ T = +25 C, V =
A S
5 V, RL = 150
, RF = 1 k , Gain = +2, unless otherwise noted)
AD8014AR/RT Min Typ Max 400 120 140 170 480 160 180 210 130 12 20 4600 2800 4000 2500 24 1.6 2.8 60 68 51 45 48 3.5 5 0.05 0.46 0.30 0.60 22 2 2 10 5 50 5 1300 450 2.3 ± 4.1 57 ± 3.8 ± 4.0 50 70 40 ±5 1.15 58 ± 6.0 1.3 5 6 15 Units MHz MHz MHz MHz MHz MHz MHz V/µs V/µs V/µs V/µs ns ns ns ns dB dB dB dB n V / H z pA/ Hz % % Degree Degree dBm mV mV µV/°C µA nA/°C ±µ A k k pF V dB V V mA mA pF V mA dB
Parameter DYNAMIC PERFORMANCE 3 dB Bandwidth Small Signal 3 dB Bandwidth Large Signal
Conditions G = +1, VO = 0.2 V p-p, RL = 1 k G = 1, VO = 0.2 V p-p, RL = 1 k VO = 2 V p-p VO = 2 V p-p, RF = 500 VO = 2 V p-p, RF = 500 , RL = 50 VO = 0.2 V p-p, RL = 1 k VO = 2 V p-p, RL = 1 k RL = 1 k, RF = 500 RL = 1 k G = 1, RL = 1 k, RF = 500 G = 1, RL = 1 k G = +1, VO = 2 V Step, R L = 1 k 2 V Step G = 1, 2 V Step 0 V to ±4 V Step at Input fC = 5 MHz, VO = 2 V p-p, RL = 1 k fC = 5 MHz, VO = 2 V p-p fC = 20 MHz, VO = 2 V p-p fC = 20 MHz, VO = 2 V p-p f = 10 kHz f = 10 kHz NTSC, G = +2, RF = 500 NTSC, G = +2, RF = 500 , RL = 50 NTSC, G = +2, RF = 500 NTSC, G = +2, RF = 500 , RL = 50 f = 10 MHz
0.1 dB Small Signal Bandwidth 0.1 dB Large Signal Bandwidth Slew Rate, 25% to 75%, VO = 4 V Step
Settling Time to 0.1% Rise and Fall Time 10% to 90% Overload Recovery to Within 100 mV NOISE/HARMONIC PERFORMANCE Total Harmonic Distortion
SFDR Input Voltage Noise Input Current Noise Differential Gain Error Differential Phase Error Third Order Intercept DC PERFORMANCE Input Offset Voltage
TMINTMAX Input Offset Voltage Drift Input Bias Current Input Bias Current Drift Input Offset Current Open Loop Transresistance INPUT CHARACTERISTICS Input Resistance Input Capacitance Input Common-Mode Voltage Range Common-Mode Rejection Ratio OUTPUT CHARACTERISTICS Output Voltage Swing Output Current Short Circuit Current Capacitive Load Drive for 30% Overshoot POWER SUPPLY Operating Range Quiescent Current Power Supply Rejection Ratio
Specifications subject to change without notice.
+Input or Input
800 +Input +Input VCM = ±2.5 V RL = 150 RL = 1 k V O = ± 2.0 V 2 V p-p, RL = 1 k, RF = 500 ± 2.25 ± 4 V to ± 6 V 55
± 3.8 52 ± 3.4 ± 3.6 40
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REV. B
SPECIFICATIONS (@ T = +25 C, V = +5 V, R = 150
A S L
AD8014
, RF = 1 k , Gain = +2, unless otherwise noted)
Min 345 100 75 90 AD8014AR/RT Typ Max 430 135 100 115 100 10 20 3900 1100 1800 1100 24 1.9 2.8 60 70 51 45 47 3.5 5 0.06 0.05 0.03 0.30 22 2 2 10 5 50 5 1300 450 2.3 1.1 to 3.9 57 1.1 to 3.9 0.9 to 4.1 50 70 55 5 1.0 58 5 6 15 Units MHz MHz MHz MHz MHz MHz MHz V/µs V/µs V/µs V/µs ns ns ns ns dB dB dB dB n V / H z pA/ Hz % % Degree Degree dBm mV mV µV/°C µA nA/°C ±µ A k k pF V dB V V mA mA pF V mA dB
Parameter DYNAMIC PERFORMANCE 3 dB Bandwidth Small Signal 3 dB Bandwidth Large Signal
Conditions G = +1, VO = 0.2 V p-p, RL = 1 k G = 1, VO = 0.2 V p-p, RL = 1 k VO = 2 V p-p VO = 2 V p-p, RF = 500 VO = 2 V p-p, RF = 500 , RL = 75 VO = 0.2 V p-p, RL = 1 k VO = 2 V p-p RL = 1 k, RF = 500 RL = 1 k G = 1, RL = 1 k, RF = 500 G = 1, RL = 1 k G = +1, VO = 2 V Step, RF = 1 k 2 V Step G = 1, 2 V Step 0 V to ±2 V Step at Input fC = 5 MHz, VO = 2 V p-p, RL = 1 k fC = 5 MHz, VO = 2 V p-p fC = 20 MHz, VO = 2 V p-p fC = 20 MHz, VO = 2 V p-p f = 10 kHz f = 10 kHz NTSC, G = +2, RF = 500 NTSC, G = +2, RF = 500 , RL = 50 NTSC, G = +2, RF = 500 NTSC, G = +2, RF = 500 , RL = 50 f = 10 MHz
0.1 dB Small Signal Bandwidth 0.1 dB Large Signal Bandwidth Slew Rate, 25% to 75%, VO = 2 V Step
Settling Time to 0.1% Rise and Fall Time 10% to 90% Overload Recovery to Within 100 mV NOISE/HARMONIC PERFORMANCE Total Harmonic Distortion
SFDR Input Voltage Noise Input Current Noise Differential Gain Error Differential Phase Error Third Order Intercept DC PERFORMANCE Input Offset Voltage
TMINTMAX Input Offset Voltage Drift Input Bias Current Input Bias Current Drift Input Offset Current Open Loop Transresistance INPUT CHARACTERISTICS Input Resistance Input Capacitance Input Common-Mode Voltage Range Common-Mode Rejection Ratio OUTPUT CHARACTERISTICS Output Voltage Swing Output Current Short Circuit Current Capacitive Load Drive for 30% Overshoot POWER SUPPLY Operating Range Quiescent Current Power Supply Rejection Ratio
Specifications subject to change without notice.
+Input or Input
750 +Input +Input VCM = 1.5 V to 3.5 V RL = 150 to 2.5 V RL = 1 k to 2.5 V VO = 1.5 V to 3.5 V 2 V p-p, RL = 1 k, RF = 500 4.5 4 V to 5.5 V 55 1.2 52 1.4 1.2 30
3.8
3.6 3.8
12 1.15
REV. B
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AD8014
ABSOLUTE MAXIMUM RATINGS 1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12.6 V Internal Power Dissipation2 Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . 0.75 W SOT-23-5 Package (RT) . . . . . . . . . . . . . . . . . . . . . . 0.5 W Input Voltage Common Mode . . . . . . . . . . . . . . . . . . . . . . ± VS Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ± 2.5 V Output Short Circuit Duration . . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves Storage Temperature Range . . . . . . . . . . . . 65°C to +150°C Operating Temperature Range . . . . . . . . . . . 40°C to +85°C Lead Temperature (Soldering 10 sec) . . . . . . . . . . . . .+300°C ESD (Human Body Model) . . . . . . . . . . . . . . . . . . . . +1500 V
NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at these or any other conditions above listed in the operational section of this specification is not implied. Exposure to Absolute Maximum Ratings for any extended periods may affect device reliability. 2 Specification is for device in free air at 25°C. 8-Lead SOIC Package JA = 155°C/W. 5-Lead SOT-23 Package JA = 240°C/W.
plastic. This is approximately +150°C. Even temporarily exceeding this limit may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of +175°C may result in device failure. The output stage of the AD8014 is designed for large load current capability. As a result, shorting the output to ground or to power supply sources may result in a very large power dissipation. To ensure proper operation it is necessary to observe the maximum power derating tables.
Table I. Maximum Power Dissipation vs. Temperature
Ambient Temp C 40 20 0 +20 +40 +60 +80 +100
Power Watts SOT-23-5 0.79 0.71 0.63 0.54 0.46 0.38 0.29 0.21
Power Watts SOIC 1.19 1.06 0.94 0.81 0.69 0.56 0.44 0.31
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8014 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the
ORDERING GUIDE
Model AD8014AR AD8014ART 2 AD8014AChips3
1
Temperature Range 40°C to +85°C 40°C to +85°C 40°C to +85°C
Package Descriptions 8-Lead SOIC 5-Lead SOT-23 Not Applicable
Package Options SO-8 RT-5 Waffle Pak
Brand Code Standard HAA Not Applicable
NOTES 1 The AD8014AR is also available in 13" Reels of 2500 each and 7" Reels of 750 each. 2 Except for samples, the AD8014ART is only available in 7" Reels of 3000 each and 13" Reels of 10000 each. 3 The AD8014A Chips are available only in Waffle Pak of 400 each. The thickness of the AD8014A Chip is 12 mils ± 1 mil. The Substrate should be tied to the +V S source.
CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8014 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
4
REV. B
Typical Performance Characteristics AD8014
15 12 9 NORMALIZED GAIN dB 6 3 VS = +5V 0 3 6 9 12 15 G = +1 VO = 200mV p-p RF = 1k RL = 1k VS = 5V NORMALIZED GAIN dB 2.0 1.0 VO = 0.2V 0 VO = 0.5V 1.0 2.0 3.0 4.0 5.0 6.0 1 10 100 FREQUENCY MHz 1000 7.0 1 10 100 FREQUENCY MHz 1000 VS = 5V G = 1 RF = 1k RL = 1k VO = 1V VO = 2V VO = 4V
Figure 1. Frequency Response, G = +1, VS = ±5 V and +5 V
Figure 4. Bandwidth vs. Output Level--Gain of 1, Dual Supply
12 9 6 NORMALIZED GAIN dB 3 0 3 6 9 12 15 1 10 100 FREQUENCY MHz 1000 VS = 5V G = +2 RF = 500 VO = 2V p-p RL = 50 RL = 75 NORMALIZED GAIN dB
12 9 VO = 0.5V p-p 6 3 0 3 6 9 12 1 10 100 FREQUENCY MHz 1000 VS = +5V G = +2 RF = 1k RL = 1k VO = 3V p-p VO = 2V p-p VO = 1V p-p
Figure 2. Frequency Response, G = +2, VO = 2 V p-p
Figure 5. Bandwidth vs. Output Level--Single Supply, G = +2
12 9 NORMALIZED GAIN dB 6 3 0 3 VO = 2V p-p 6 9 12 10 100 FREQUENCY MHz 1000 VS = 5V G = +2 RF = 1k RL = 1k VO = 4V p-p VO = 0.5V p-p NORMALIZED GAIN dB VO = 1V p-p
2 1 VO = 0.5V p-p 0 1 2 3 4 5 6 7 8 1 10 100 FREQUENCY MHz 1000 VS = +5V G = 1 RF = 1k RL = 1k VO = 0.2V p-p VO = 4V p-p VO = 2V p-p
Figure 3. Bandwidth vs. Output Voltage Level-- Dual Supply, G = +2
Figure 6. Bandwidth vs. Output Level--Single Supply, Gain of 1
REV. B
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