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Details, datasheet, quote on part number:AD8047AR
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| Part: | AD8047AR |
| Category: | Analog & Mixed-Signal Processing => Amplifiers => High Speed/Video Amplifiers => Voltage Feedback |
| Description: | 250 Mhz, General Purpose Voltage Feedback op Amps |
| Company: | Analog Devices |
| Datasheet: | Download AD8047AR datasheet File size : 490 kB |
| Request For quote: | Find where to buy AD8047AR
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Datasheet text preview:
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FEATURES Wide Bandwidth AD8047, G = +1 AD8048, G = +2 Small Signal 250 MHz 260 MHz Large Signal (2 V p-p) 130 MHz 160 MHz 5.8 mA Typical Supply Current Low Distortion, (SFDR) Low Noise 66 dBc typ @ 5 MHz 54 dBc typ @ 20 MHz 5.2 nV/Hz (AD8047), 3.8 nV/Hz (AD8048) Noise Drives 50 pF Capacitive Load High Speed Slew Rate 750 V/µs (AD8047), 1000 V/µs (AD8048) Settling 30 ns to 0.01%, 2 V Step ± 3 V to ±6 V Supply Operation APPLICATIONS Low Power ADC Input Driver Differential Amplifiers IF/RF Amplifiers Pulse Amplifiers Professional Video DAC Current to Voltage Conversion Baseband and Video Communications Pin Diode Receivers Active Filters/Integrators PRODUCT DESCRIPTION
250 MHz, General Purpose Voltage Feedback Op Amps AD8047/AD8048
FUNCTIONAL BLOCK DIAGRAM 8-Pin Plastic Mini-DIP (N), Cerdip (Q) and SO (R) Packages
NC INPUT +INPUT V S
1 2 3 4
8 7 6
NC +VS OUTPUT NC
AD8047/48
(Top View) NC = NO CONNECT
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The AD8047 and AD8048's low distortion and cap load drive make the AD8047/AD8048 ideal for buffering high speed ADCs. They are suitable for 12 bit/10 MSPS or 8 bit/60 MSPS ADCs. Additionally, the balanced high impedance inputs of the voltage feedback architecture allow maximum flexibility when designing active filters. The AD8047 and AD8048 are offered in industrial (40°C to +85°C) temperature ranges and are available in 8-pin plastic DIP and SOIC packages.
The AD8047 and AD8048 are very high speed and wide bandwidth amplifiers. The AD8047 is unity gain stable. The AD8048 is stable at gains of two or greater. The AD8047 and AD8048, which utilize a voltage feedback architecture, meet the requirements of many applications that previously depended on current feedback amplifiers. A proprietary circuit has produced an amplifier that combines many of the best characteristics of both current feedback and voltage feedback amplifiers. For the power (6.6 mA max) the AD8047 and AD8048 exhibit fast and accurate pulse response (30 ns to 0.01%) as well as extremely wide small signal and large signal bandwidth and low distortion. The AD8047 achieves 54 dBc distortion at 20 MHz and 250 MHz small signal and 130 MHz large signal bandwidths.
1V
5ns
Figure 1. AD8047 Large Signal Transient Response, VO = 4 V p-p, G = +1
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Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. © Analog Devices, Inc., 1995 One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A. Tel: 617/329-4700 Fax: 617/326-8703
AD8047/AD8048SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (±V = ±5 V; R
S LOAD
Parameter DYNAMIC PERFORMANCE Bandwidth (3 dB) Small Signal Large Signal1 Bandwidth for 0.1 dB Flatness Slew Rate, Average +/ Rise/Fall Time Settling Time To 0.1% To 0.01% HARMONIC/NOISE PERFORMANCE 2nd Harmonic Distortion 3rd Harmonic Distortion Input Voltage Noise Input Current Noise Average Equivalent Integrated Input Noise Voltage Differential Gain Error (3.58 MHz) Differential Phase Error (3.58 MHz) DC PERFORMANCE2, RL = 150 Input Offset Voltage3
Conditions
= 100 ; AV = 1 (AD8047); AV = 2 (AD8048), unless otherwise noted) AD8047A AD8048A Min Typ Max Min Typ Max Units
VOUT 0.4 V p-p VOUT = 2 V p-p VOUT = 300 mV p-p 8047, RF = 0 ; 8048, RF = 200 VOUT = 4 V Step VOUT = 0.5 V Step VOUT = 4 V Step VOUT = 2 V Step VOUT = 2 V Step 2 V p-p; 20 MHz RL = 1 k 2 V p-p; 20 MHz RL = 1 k f = 100 kHz f = 100 kHz 0.1 MHz to 10 MHz RL = 150 , G = +2 RL = 150 , G = +2
170 100
250 130 35 750 1.1 4.3 13 30 54 64 60 61 5.2 1.0 16 0.02 0.03 1 3 4 3.5 6.5 2 3
180 135
260 160 50 1000 1.2 3.2 13 30 48 60 56 65 3.8 1.0 11 0.01 0.02 1 ±5 1 0.5 3 4 3.5 6.5 2 3
MHz MHz MHz V/µs ns ns ns ns dBc dBc dBc dBc nV/ H z pA/H z µV rms % Degree mV mV µV/°C µA µA µA µA dB dB dB k pF V V mA mA V mA mA dB
475
740
TMIN TMAX Offset Voltage Drift Input Bias Current TMIN TMAX Input Offset Current Common-Mode Rejection Ratio Open-Loop Gain INPUT CHARACTERISTICS Input Resistance Input Capacitance Input Common-Mode Voltage Range OUTPUT CHARACTERISTICS Output Voltage Range, RL = 150 Output Current Output Resistance Short Circuit Current POWER SUPPLY Operating Range Quiescent Current TMIN TMAX Power Supply Rejection Ratio
NOTES 1 See Max Ratings and Theory of Operation sections of data sheet. 2 Measured at AV = 50. 3 Measured with respect to the inverting input. Specifications subject to change without notice.
±5 1 0.5
TMIN TMAX V CM = ± 2 . 5 V V OUT = ± 2 . 5 V TMIN TMAX
74 58 54
80 62
74 65 56
80 68
500 1.5 ± 3.4 ± 2.8 ± 3.0 50 0.2 130 ± 5.0 ± 6.0 5.8 6.6 7.5 78
500 1.5 ± 3.4 ± 2.8 ± 3.0 50 0.2 130 ± 3.0 ± 5.0 ± 6.0 5.9 6.6 7.5 72 78
± 3.0
72
2
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AD8047/AD8048
ABSOLUTE MAXIMUM RATINGS 1 MAXIMUM POWER DISSIPATION
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V Voltage Swing × Bandwidth Product (AD8047) . . . 180 V MHz (AD8048) . . . 250 V MHz Internal Power Dissipation2 Plastic Package (N) . . . . . . . . . . . . . . . . . . . . . . . . 1.3 Watts Small Outline Package (R) . . . . . . . . . . . . . . . . . . . 0.9 Watts Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ± VS Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ± 1.2 V Output Short Circuit Duration . . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves Storage Temperature Range (N, R) . . . . . . . . 65°C to +125°C Operating Temperature Range (A Grade) . . . 40°C to +85°C Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300°C
NOTES 1 Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 Specification is for device in free air: 8 - P i n Plastic DIP Package: J A = 90°C/Watt 8-Pin SOIC Package: JA = 140°C/Watt
The maximum power that can be safely dissipated by these devices is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately +150°C. Exceeding this limit temporarily may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of +175°C for an extended period can result in device failure. While the AD8047 and AD8048 are internally short circuit protected, this may not be sufficient to guarantee that the maximum junction temperature (+150°C) is not exceeded under all conditions. To ensure proper operation, it is necessary to observe the maximum power derating curves.
2.0 8-PIN MINI-DIP PACKAGE TJ = +150°C
MAXIMUM POWER DISSIPATION Watts
1.5
1.0
METALIZATION PHOTOS
Dimensions shown in inches and (mm). Connect Substrate to V S.
8-PIN SOIC PACKAGE 0.5
AD8047
+VS
0 50 40 30 20 10 0 10 20 30 40 50 60 AMBIENT TEMPERATURE °C
70
80
90
0.045 (1.14) VOUT
Figure 2. Plot of Maximum Power Dissipation vs. Temperature
ORDERING GUIDE
IN VS 0.044 (1.13) +IN
Model AD8047AN AD8047AR AD8047-EB AD8048AN AD8048AR AD8048-EB
Temperature Range 40°C to +85°C 40°C to +85°C 40°C to +85°C 40°C to +85°C
Package Package Description Option* Plastic DIP SOIC Evaluation Board Plastic DIP SOIC Evaluation Board N-8 R-8
AD8048
+VS
N-8 R-8
0.045 OUT (1.14)
*N = Plastic DIP; R= SOIC (Small Outline Integrated Circuit)
IN
+IN 0.044 (1.13)
VS
CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although these devices feature proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
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AD8047/AD8048 AD8047Typical Characteristics
+VS 10µF 0.1µF PULSE GENERATOR TR /TF = 500ps VI N RT = 49.9 VS
V S PULSE GENERATOR TR/TF = 500ps RIN 2 RT = 66.5 3 100 +VS RF 10µF 0.1µF 7
2
7
AD8047
3 4
6 0.1µF 10µF
VO U T RL = 100
VIN
AD8047
4
6 0.1µF 10µF
VO U T RL = 100
Figure 3. Noninverting Configuration, G = +1
Figure 6. Inverting Configuration, G = 1
1V
5ns
1V
5ns
Figure 4. Large Signal Transient Response; VO = 4 V p-p, G = +1
Figure 7. Large Signal Transient Response; VO = 4 V p-p, G = 1, RF = RIN = 200
100mV
5ns
100mV
5ns
Figure 5. Small Signal Transient Response; VO = 400 mV p-p, G = +1
Figure 8. Small Signal Transient Response; VO = 400 mV p-p, G = 1, RF = RIN = 200
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AD8047/AD8048 AD8048Typical Characteristics
RF PULSE GEN ERATOR TR/T F = 500ps RIN 2 7 +V S 10µF 0.1µF
RF PULSE GENERATOR TR/TF = 500ps RIN VI N 2 RT = 66.5 3 RS = 100
6 0.1µF VO UT RL = 100
+VS
10µF 0.1µF
7
AD8048
VI N RT = 49.9 V S 3 4
AD8048
4
6 0.1µF
VO U T RL = 100
10µF
10µF VS
Figure 9. Noninverting Configuration, G = +2
Figure 12. Inverting Configuration, G= 1
1V
5ns
1V
5ns
Figure 10. Large Signal Transient Response; VO = 4 V p-p, G = +2, RF = RIN = 200
Figure 13. Large Signal Transient Response; VO = 4 V p-p, G = 1, RF = RIN = 200
100mV
5ns
100mV
5ns
Figure 11. Small Signal Transient Response; VO = 400 mV p-p, G = +2, RF = RIN = 200
Figure 14. Small Signal Transient Response; VO = 400 mV p-p, G = 1, RF = RIN = 200
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