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Details, datasheet, quote on part number:AD811AR-20
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Datasheet text preview:
a
FEATURES High Speed 140 MHz Bandwidth (3 dB, G = +1) 120 MHz Bandwidth (3 dB, G = +2) 35 MHz Bandwidth (0.1 dB, G = +2) 2500 V/ s Slew Rate 25 ns Settling Time to 0.1% (For a 2 V Step) 65 ns Settling Time to 0.01% (For a 10 V Step) Excellent Video Performance (RL =150 ) 0.01% Differential Gain, 0.01 Differential Phase Voltage Noise of 1.9 nVHz Low Distortion: THD = 74 dB @ 10 MHz Excellent DC Precision 3 mV max Input Offset Voltage Flexible Operation Specified for 5 V and 15 V Operation 2.3 V Output Swing into a 75 Load (VS = 5 V) APPLICATIONS Video Crosspoint Switchers, Multimedia Broadcast Systems HDTV Compatible Systems Video Line Drivers, Distribution Amplifiers ADC/DAC Buffers DC Restoration Circuits Medical--Ultrasound, PET, Gamma and Counter Applications PRODUCT DESCRIPTION
NC 1 IN 2 +IN 3 VS 4 8 NC 7 +V S 6 OUTPUT
High Performance Video Op Amp AD811
NC NC NC 3 2 1 20 19 NC 4 NC 5 IN 6 NC 7 +IN 8 9 10 11 12 13 VS NC = NO CONNECT NC NC NC NC 18 NC NC NC
CONNECTION DIAGRAMS 20-Lead LCC (E-20A) Package 8-Lead Plastic (N-8) Cerdip (Q-8) SOIC (SO-8) Packages
AD811
17 NC 16 +V S 15 NC 14 OUTPUT
AD811
5 NC
NC = NO CONNECT
16-Lead SOIC (R-16) Package 20-Lead SOIC (R-20) Package
NC 1 NC 2 IN 3 16 NC 15 NC 14 +V S 13 NC 12 OUTPUT 11 NC NC 1 20 NC 19 NC 18 NC 17 +V S 16 NC 15 OUTPUT 14 NC 13 NC
NC 2 NC 3 IN 4 NC 5
NC 4 +IN NC 5 6
+IN 6 NC 7 VS 8 NC 9 NC 10
VS 7 NC 8
AD811
10 NC 9 NC
NC = NO CONNECT
AD811
12 NC 11 NC
NC = NO CONNECT
The AD811 is a wideband current-feedback operational amplifier, optimized for broadcast quality video systems. The 3 dB bandwidth of 120 MHz at a gain of +2 and differential gain and phase of 0.01% and 0.01° (RL = 150 ) make the AD811 an excellent choice for all video systems. The AD811 is designed to meet a stringent 0.1 dB gain flatness specification to a bandwidth of 35 MHz (G = +2) in addition to the low differential gain and phase errors. This performance is achieved whether driving one or two back terminated 75 cables, with a low power supply current of 16.5 mA. Furthermore, the AD811 is specified over a power supply range of ± 4.5 V to ± 18 V.
0.10 0.09 DIFFERENTIAL GAIN % 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 5 6 7 8 9 10 11 12 13 14 GAIN PHASE RF = 649 FC = 3.58MHz 100 IRE MODULATED RAMP RL = 150 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 DIFFERENTIAL PHASE Degrees
The AD811 is also excellent for pulsed applications where transient response is critical. It can achieve a maximum slew rate of greater than 2500 V/µs with a settling time of less than 25 ns to 0.1% on a 2 volt step and 65 ns to 0.01% on a 10 volt step. The AD811 is ideal as an ADC or DAC buffer in data acquisition systems due to its low distortion up to 10 MHz and its wide unity gain bandwidth. Because the AD811 is a current feedback amplifier, this bandwidth can be maintained over a wide range of gains. The AD811 also offers low voltage and current noise of 1.9 nV/Hz and 20 pA/Hz, respectively, and excellent dc accuracy for wide dynamic range applications.
12 G = +2 RL = 150 RG = RFB 9 VS = 15V
6
GAIN dB
3 VS = 0 3 5V
6 15 1M 10 M FREQUENCY Hz 100 M SUPPLY VOLTAGE
Volts
REV. D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 1999
AD811SPECIFICATIONS (@ T = +25 C and V =
A S
15 V dc, RLOAD = 150 unless otherwise noted)
Min AD811J/A1 Typ Max Min AD811S2 Typ Max Units
Model DYNAMIC PERFORMANCE Small Signal Bandwidth (No Peaking) 3 dB G = +1 G = +2 G = +2 G = +10 0.1 dB Flat G = +2 Full Power Bandwidth Slew Rate
3
Conditions
VS
RFB = 562 RFB = 649 RFB = 562 RFB = 511 RFB = 562 RFB = 649 VOUT = 20 V p-p VOUT = 4 V p-p VOUT = 20 V p-p 10 V Step, AV = 1 2 V Step, AV = 1 RFB = 649, AV = +2 f = 3.58 MHz f = 3.58 MHz VOUT = 2 V p-p, AV = +2 @ fC = 10 MHz
± 15 V ± 15 V ±5 V ± 15 V ±5 V ± 15 V ± 15 V ±5 V ± 15 V ± 15 V ±5 V ± 15 V ± 15 V ± 15 V ± 15 V ±5 V ± 15 V ± 5 V, ± 15 V
140 120 80 100 25 35 40 400 2500 50 65 25 3.5 0.01 0.01 74 36 43 0.5 5 3 5
140 120 80 100 25 35 40 400 2500 50 65 25 3.5 0.01 0.01 74 36 43 0.5 5 5 15 10 20 2 2 5 30 10 25 3 5
MHz MHz MHz MHz MHz MHz MHz V/µs V/µs ns ns ns ns % Degree dBc dBm dBm mV mV µV/°C µA µA µA µA M M M
Settling Time to 0.1% Settling Time to 0.01% Settling Time to 0.1% Rise Time, Fall Time Differential Gain Differential Phase THD @ fC = 10 MHz Third Order Intercept4 INPUT OFFSET VOLTAGE
TMIN to TMAX Offset Voltage Drift INPUT BIAS CURRENT Input TMIN to TMAX +Input TMIN to TMAX TRANSRESISTANCE TMIN to TMAX VO U T = ± 1 0 V RL = RL = 200 VO U T = ± 2 . 5 V RL = 150 VC M = ± 2 . 5 VC M = ± 1 0 V TMIN to TMAX VS = ± 4.5 V to ± 18 V TMIN to TMAX TMIN to TMAX TMIN to TMAX f = 1 kHz f = 1 kHz ±5 V ± 15 V TJ = +25°C (Open Loop @ 5 MHz) ± 15 V ± 15 V ±5 V ±5 V ± 15 V ± 5 V, ± 15 V ± 5 V, ± 15 V
2 2
0.75 0.5 0.25
1.5 0.75 0.4
0.75 0.5
1.5 0.75
0.125 0.4
COMMON-MODE REJECTION VOS (vs. Common Mode) TMIN to TMAX TMIN to TMAX Input Current (vs. Common Mode) POWER SUPPLY REJECTION VO S +Input Current Input Current INPUT VOLTAGE NOISE INPUT CURRENT NOISE OUTPUT CHARACTERISTICS Voltage Swing, Useful Operating Range5 Output Current Short-Circuit Current Output Resistance INPUT CHARACTERISTICS +Input Resistance Input Resistance Input Capacitance Common-Mode Voltage Range POWER SUPPLY Operating Range Quiescent Current TRANSISTOR COUNT
56 60
60 66 1 70 0.3 0.4 1.9 20 ± 2.9 ± 12 100 150 9 1.5 14 7.5 ±3 ± 13
50 56 3 60 2 2
60 66 1 70 0.3 0.4 1.9 20 ± 2.9 ± 12 100 150 9 1.5 14 7.5 ±3 ± 13
3
dB dB µA/V dB µA/V µA/V nV/ Hz pA/ Hz V V mA mA M pF V V
60
2 2
+Input
±5 V ± 15 V ±5 V ± 15 V ± 4.5
14.5 16.5 40
± 18 16.0 18.0
± 4.5 14.5 16.5 40
± 18 16.0 18.0
V mA mA
# of Transistors
NOTES 1 The AD811JR is specified with ± 5 V power supplies only, with operation up to ± 12 volts. 2 See Analog Devices' military data sheet for 883B tested specifications. 3 FPBW = slew rate/(2 VPEAK). 4 Output power level, tested at a closed loop gain of two. 5 Useful operating range is defined as the output voltage at which linearity begins to degrade. Specifications subject to change without notice.
2
REV. D
AD811
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 18 V AD811JR Grade Only . . . . . . . . . . . . . . . . . . . . . . . . . ± 12 V Internal Power Dissipation2 . . . . . . . . Observe Derating Curves Output Short Circuit Duration . . . . . Observe Derating Curves Common-Mode Input Voltage . . . . . . . . . . . . . . . . . . . . . ± VS Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . ± 6 V Storage Temperature Range (Q, E) . . . . . . . . 65°C to +150°C Storage Temperature Range (N, R) . . . . . . . . 65°C to +125°C Operating Temperature Range AD811J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to +70°C AD811A . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C to +85°C AD811S . . . . . . . . . . . . . . . . . . . . . . . . . . . 55°C to +125°C Lead Temperature Range (Soldering 60 sec) . . . . . . . . +300°C
NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 8-Lead Plastic Package: JA = 90°C/W 8-Lead Cerdip Package: JA = 110°C/W 8-Lead SOIC Package: JA = 155°C/W 16-Lead SOIC Package: JA = 85°C/W 20-Lead SOIC Package: JA = 80°C/W 20-Lead LCC Package: JA = 70°C/W
ABSOLUTE MAXIMUM RATINGS 1
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD811 is limited by the associated rise in junction temperature. For the plastic packages, the maximum safe junction temperature is +145°C. For the cerdip and LCC packages, the maximum junction temperature is +175°C. If these maximums are exceeded momentarily, proper circuit operation will be restored as soon as the die temperature is reduced. Leaving the device in the "overheated" condition for an extended period can result in device burnout. To ensure proper operation, it is important to observe the derating curves in Figures 17 and 18. While the AD811 is internally short circuit protected, this may not be sufficient to guarantee that the maximum junction temperature is not exceeded under all conditions. One important example is when the amplifier is driving a reverse terminated 75 cable and the cable's far end is shorted to a power supply. With power supplies of ± 12 volts (or less) at an ambient temperature of +25°C or less, if the cable is shorted to a supply rail, then the amplifier will not be destroyed, even if this condition persists for an extended period.
ESD SUSCEPTIBILITY
ORDERING GUIDE
Model AD811AN AD811AR-16 AD811AR-20 AD811JR AD811SQ/883B 5962-9313101MPA AD811SE/883B 5962-9313101M2A AD811JR-REEL AD811JR-REEL7 AD811AR-16-REEL AD811AR-16-REEL7 AD811AR-20-REEL AD811ACHIPS AD811SCHIPS
Temperature Range 40°C to +85°C 40°C to +85°C 40°C to +85°C 0°C to +70°C 55°C to +125°C 55°C to +125°C 55°C to +125°C 55°C to +125°C 0°C to +70°C 0°C to +70°C 40°C to +85°C 40°C to +85°C 40°C to +85°C 40°C to +85°C 55°C to +125°C
Package Option* N-8 R-16 R-20 SO-8 Q-8 Q-8 E-20A E-20A SO-8 SO-8 R-16 R-16 R-20 Die Die
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 volts, which readily accumulate on the human body and on test equipment, can discharge without detection. Although the AD811 features proprietary ESD protection circuitry, permanent damage may still occur on these devices if they are subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid any performance degradation or loss of functionality.
METALIZATION PHOTOGRAPH
Contact Factory for Latest Dimensions. Dimensions Shown in Inches and (mm).
*E = Ceramic Leadless Chip Carrier; N = Plastic DIP; Q = Cerdip; SO (R) = Small Outline IC (SOIC).
CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD811 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. D
3
AD811Typical Performance Characteristics
Volts
TA = +25 C 15
Volts
20
20 TA = +25 C 15
MAGNITUDE OF THE OUTPUT VOLTAGE
COMMON-MODE VOLTAGE RANGE
10
NO LOAD 10
5
RL = 150 5
0 0 5 10 SUPPLY VOLTAGE Volts 15 20
0 0 5 10 SUPPLY VOLTAGE Volts 15 20
Figure 1. Input Common-Mode Voltage Range vs. Supply
Figure 4. Output Voltage Swing vs. Supply
35
21
QUIESCENT SUPPLY CURRENT mA
30
UTPUT VOLTAGE Volts pp
VS = 25 20 15
15V
18
15
VS =
15V
12 VS = 9 5V
VS = 10 5 0 10
5V
6
O
1k 100 LOAD RESISTANCE
10k
3 60
40
20
0 20 60 40 80 100 JUNCTION TEMPERATURE C
120
140
Figure 2. Output Voltage Swing vs. Resistive Load
Figure 5. Quiescent Supply Current vs. Junction Temperature
10 NONINVERTING INPUT 5 TO 15V
INPUT OFFSET VOLTAGE mV
10 8 6 4 2 0 2 4 6 8 VS = 15V VS = 5V
A
0 VS = INVERTING INPUT 10 5V
INPUT BIAS CURRENT
20
VS =
15V
30 60
40
20
0 20 40 60 80 JUNCTION TEMPERATURE C
100
120
140
10 60
40
20
0
20
40
60
80
100
120
140
JUNCTION TEMPERATURE C
Figure 3. Input Bias Current vs. Junction Temperature
Figure 6. Input Offset Voltage vs. Junction Temperature
4
REV. D
AD811
250
2.0 VS = 15V RL = 200 VOUT = 10V
TRANSRESISTANCE M
SHORT CIRCUIT CURRENT mA
200 VS = 150 15V
1.5
1.0
100
VS =
5V
0.5
VS = 5V RL = 150 VOUT = 2.5V
50 60
40
20
0 20 40 60 80 100 JUNCTION TEMPERATURE C
120
140
0 60 40
20
0 20 40 60 80 100 JUNCTION TEMPERATURE C
120
140
Figure 7. Short Circuit Current vs. Junction Temperature
Figure 10. Transresistance vs. Junction Temperature
10 CLGOSED-LOOP OUTPUT RESISTANCE
100
100
1
NOISE VOLTAGE nV/ Hz
10
INVERTING CURRENT VS =
5 TO 15V 10
0.1 VS =
15V AIN = +2 RFB = 649
VOLTAGE NOISE VS =
15V
VOLTAGE NOISE VS = 1
5V 10k 1 100k
0.01 10k
100k
1M FREQUENCY Hz
10M
100M
10
100
1k FREQUENCY Hz
Figure 8. Closed-Loop Output Resistance vs. Frequency
Figure 11. Input Noise vs. Frequency
10 RISE TIME 8 60
3dB BANDWIDTH MHz
OVERSHOOT %
200 VO = 1V pp VS= 15V RL= 150 GAIN = +2
10
160
8
6 OVERSHOOT 4 VS = 15V VO = 1V pp RL = 150 GAIN = +2 2
40
120 BANDWIDTH 80
6
20
4
0
40 PEAKING
2
0 400 R
1.0k 1.2k 1.4k 800 VALUE OF FEEDBACK RESISTOR (RFB)
600
1.6k
0 400
600
1.0k 1.2k 1.4k 800 VALUE OF FEEDBACK RESISTOR (RFB)
0 1.6k
Figure 9. Rise Time and Overshoot vs. Value of Feedback Resistor, RFB
Figure 12. 3 dB Bandwidth and Peaking vs. Value of RFB
REV. D
5
PEAKING dB
ISETIME ns
NOISE CURRENT pA/ Hz
VS =
5V
NONINVERTING CURRENT VS =
5 TO 15V
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