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Details, datasheet, quote on part number:AD8206
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Datasheet text preview:
Preliminary Technical Data
FEATURES
Ideal for current shunt applications High common-mode voltage range -2 V to +65 V operating -5 V to +68 V survival Gain = 20 Wide operating temperature range Die: -40°C to +150°C 8-lead SOIC: -40°C to +125°C Adjustable offset Available in SOIC and die form
Single-Supply 42 V System Difference Amplifier AD8206
FUNCTIONAL BLOCK DIAGRAM
V+
6
+IN 8
5
OUT
IN 1
AD8206
7
VREF1
3
NC 4
2
VREF2
EXCELLENT AC AND DC PERFORMANCE
15 µV/°C offset drift 30 ppm/°C gain drift 80 dB CMRR dc to 20 kHz
NC = NO CONNECT
GND
Figure 1.
APPLICATIONS
High-side current sensing in: Motor controls Transmission controls Diesel injection controls Engine management Suspension controls Vehicle dynamic controls DC-to-dc converters
GENERAL DESCRIPTION
The AD8206 is a single-supply difference amplifier for amplifying small differential voltages in the presence of large commonmode voltages. The operating input common-mode voltage range extends from -2 V to +65 V. The typical single-supply voltage is 5 V. The AD8206 is offered in die and packaged form. The operating temperature range for the die is 25°C higher (up to 150°C) than the packaged part to enable the user to apply the AD8206 in high temperature applications. Excellent dc performance over temperature keeps errors in the measurement loop to a minimum. Offset drift is typically less than 15 µV/°C, and gain drift is typically below 30 ppm/°C. The output offset can be adjusted from 0.05 V to 4.8 V with a 5 V supply by using the VREF1 and VREF2 pins. With VREF1 attached to the V+ pin, and VREF2 attached to the GND pin, the output is set at half scale. Attaching both pins to GND causes the output to be unipolar, starting near ground. Attaching both pins to V+ causes the output to be unipolar starting near V+. Other offsets can be obtained by applying an external voltage to the VREF1 and VREF2 pins.
Rev. PrA
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.326.8703 © 2004 Analog Devices, Inc. All rights reserved.
04953-001
AD8206 TABLE OF CONTENTS
Specifications.... 3 Absolute Maximum Ratings... 4 ESD Caution.......... 4 Pin Configuration and Function Descriptions..... 5 Typical Performance Characteristics ............ 6 Theory of Operation ...... 8 Output Offset Adjustment...... 9 Unidirectional Operation... 9 Ground Referenced Output ........ 9 V+ Referenced Output........ 9
Preliminary Technical Data
Bidirectional Operation.......9 External Reference Output........ 10 Splitting the Supply ........... 10 Splitting an External Reference ...... 10 Applications.... 11 High-Side Current Sense with a Low-Side Switch........ 11 High-Side Current Sense with a High-Side Switch ...... 11 Outline Dimensions ..... 12 Ordering Guide ........ 12
REVISION HISTORY
6/04--Revision 0: Initial Version
Rev. PrA | Page 2 of 12
Preliminary Technical Data SPECIFICATIONS
TA = Operating Temperature Range, VS = 5 V, unless otherwise noted. Table 1.
Parameter GAIN Initial Accuracy Accuracy Over Temperature Gain vs. Temperature VOLTAGE OFFSET Offset Voltage (RTI) Over Temperature (RTI) Offset Drift INPUT Input Impedance Differential Common Mode Input Voltage Range Common-Mode Rejection Conditions AD8206 SOIC Min Typ Max 20 VO 0.1 V dc, 25°C Specified Temperature Range ±30 25°C Specified Temperature Range 15 ±2 ±4.5 15 ±1 ±1.2 ±30 ±2.5 ±6 Min
AD8206
AD8206 DIE Typ Max 20 ±1 ±1.3
Unit V/V % % ppm/°C mV mV µV/°C
400 200 Common Mode, Continuous Differential1 25°C, f = DC to 20 kHz2 Operating Temperature Range, f = DC to 20 kHz2 RL = 25 k -2 78 76 250 86 80 65 -2 78 76
400 200 65 250 86 80
k k V mV dB dB
OUTPUT Output Voltage Range Output Resistance DYNAMIC RESPONSE Small Signal -3 dB Bandwidth Slew Rate NOISE 0.1 Hz to 10 Hz, RTI Spectral Density, 1 kHz, RTI OFFSET ADJUSTMENT Ratiometric Accuracy3 Accuracy, RTO Output Offset Adjustment Range VREF Divider Resistor Values POWER SUPPLY Operating Range Quiescent Current Over Temperature Power Supply Rejection Ratio Temperature Range For Specified Performance
0.05 200 50 0.5 20 0.5
4.8
0.05 200 50 0.5 20 0.5
4.8
V kHz V/µs µV p-p µV/Hz
Divider to Supplies Voltage applied to VREF1 and VREF2 in Parallel VS = 5 V
0.497
0.503 ±2 4.8 40 5.5 2
0.497
0.503 ±2 4.8 40 5.5 2
V/V mV/V V k V mA dB °C
0.05 24 4.5
32
0.05 24 4.5 70
32
VO = 0.1 V dc 70 Operating Temperature Range -40
+125
-40°C
+150
1 2
Input voltage range = ±125 mV with half-scale offset. Source imbalance < 2 . 3 The offset adjustment is ratiometric to the power supply when VREF1 and VREF2 are used as a divider between the supplies.
Rev. PrA | Page 3 of 12
AD8206 ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Supply Voltage Continuous Input Voltage Reverse Supply Voltage Operating Temperature Range Storage Temperature Output Short-Circuit Duration Rating 12.5 V -5 V to +68 V 0.3 V -40°C to +125°C -65 to +150C Indefinite
Preliminary Technical Data
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
Rev. PrA | Page 4 of 12
Preliminary Technical Data PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
IN 1 GND 2 VREF2 3
8
AD8206
+IN
NC = NO CONNECT
Figure 3. Pin Configuration
Table 3. Pin Function Descriptions
Pin No. 1 2 3 4 5 6 7 8 Mnemonic -IN GND VREF2 NC OUT V+ VREF1 +IN X -206 -447 -432 N/A 444 444 456 203 Y 508 57 -457 N/A -472 -203 434 509
Figure 2. Metallization Diagram
04953-002
Die size is 1170 µm by 1280 µm. Die thickness is 13 mil. Minimum passivation opening (minimum bond pad size) is 92 µm × 92 µm. Passivation type is 8KA USG (Oxide) + 10KA Oxynitride. Bond pad metal composition is 98.5% Al, 1% Si, and 0.5% Cu. Backside potential is V+.
Rev. PrA | Page 5 of 12
04953-003
VREF1 TOP VIEW 6 V+ (Not to Scale) NC 4 5 OUT
7
AD8206
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