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Details, datasheet, quote on part number:AD8350
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Datasheet text preview:
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FEATURES High Dynamic Range Output IP3: +28 dBm: Re 50 @ 250 MHz Low Noise Figure: 5.9 dB @ 250 MHz Two Gain Versions: AD8350-15: 15 dB AD8350-20: 20 dB 3 dB Bandwidth: 1.0 GHz Single Supply Operation: 5 V to 10 V Supply Current: 28 mA S Input/Output Impedance: 200 ingle-Ended or Differential Input Drive 8-Lead SOIC Package and 8-Lead microSOIC Package APPLICATIONS Cellular Base Stations Communications Receivers RF/IF Gain Block Differential A-to-D Driver SAW Filter Interface Single-Ended-to-Differential Conversion High Performance Video High Speed Data Transmission PRODUCT DESCRIPTION
Low Distortion 1.0 GHz Differential Amplifier AD8350
FUNCTIONAL BLOCK DIAGRAM 8-Lead SOIC and SOIC Packages (with Enable)
IN+ 1 ENBL 2 8 IN GND GND OUT
+
7 6 5
VCC 3 OUT+ 4
AD8350
The AD8350 series are high performance fully-differential amplifiers useful in RF and IF circuits up to 1000 MHz. The amplifier has excellent noise figure of 5.9 dB at 250 MHz. It offers a high output third order intercept (OIP3) of +28 dBm at 250 MHz. Gain versions of 15 dB and 20 dB are offered. The AD8350 is designed to meet the demanding performance requirements of communications transceiver applications. It enables a high dynamic range differential signal chain, with exceptional linearity and increased common-mode rejection. The device can be used as a general purpose gain block, an A-to-D driver, and high speed data interface driver, among other functions. The AD8350 input can also be used as a singleended-to-differential converter.
The amplifier can be operated down to 5 V with an OIP3 of +28 dBm at 250 MHz and slightly reduced distortion performance. The wide bandwidth, high dynamic range and temperature s t a b i l i t y make this product ideal for the various RF and IF f r e quencies required in cellular, CATV, broadband, instrumentation and other applications. The AD8350 is offered in an 8-lead single SOIC package and µSOIC package. It operates from 5 V and 10 V power supplies, drawing 28 mA typical. The AD8350 offers a power enable function for power-sensitive applications. The AD8350 is fabricated using Analog Devices' proprietary high speed complementary bipolar process. The device is available in the industrial (40°C to +85° C) temperature range.
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Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2001
AD8350SPECIFICATIONS differential inputs and differential outputs unless noted.)
Parameter DYNAMIC PERFORMANCE 3 dB Bandwidth Bandwidth for 0.1 dB Flatness Slew Rate Settling Time Gain (S21)1 Gain Supply Sensitivity Gain Temperature Sensitivity Isolation (S12)1 NOISE/HARMONIC PERFORMANCE 50 MHz Signal Second Harmonic Third Harmonic Output Second Order Intercept2 Output Third Order Intercept2 250 MHz Signal Second Harmonic Third Harmonic Output Second Order Intercept2 Output Third Order Intercept2 1 dB Compression Point (RTI)2 Voltage Noise (RTI) Noise Figure INPUT/OUTPUT CHARACTERISTICS Differential Offset Voltage (RTI) Differential Offset Drift Input Bias Current Input Resistance CMRR Output Resistance POWER SUPPLY Operating Range Quiescent Current Conditions VS = 5 V, VOUT = 1 V p-p VS = 10 V, VOUT = 1 V p-p VS = 5 V, VOUT = 1 V p-p VS = 10 V, VOUT = 1 V p-p VOUT = 1 V p-p 0.1%, VOUT = 1 V p-p VS = 5 V, f = 50 MHz VS = 5 V to 10 V, f = 50 MHz TMIN to TMAX f = 50 MHz Min
(@ 25 C, VS = 5 V, G = 15 dB, unless otherwise noted. All specifications refer to
Typ 0.9 1.1 90 90 2000 10 15 0.003 0.002 18 Max Unit GHz GHz MHz MHz V/µs ns dB dB/V d B /° C dB
14
16
VS = 5 V, VOUT = 1 V p-p VS = 10 V, VOUT = 1 V p-p VS = 5 V, VOUT = 1 V p-p VS = 10 V, VOUT = 1 V p-p VS = 5 V VS = 10 V VS = 5 V VS = 10 V VS = 5 V, VOUT = 1 V p-p VS = 10 V, VOUT = 1 V p-p VS = 5 V, VOUT = 1 V p-p VS = 10 V, VOUT = 1 V p-p VS = 5 V VS = 10 V VS = 5 V VS = 10 V VS = 5 V VS = 10 V f = 150 MHz f = 150 MHz V O U T + VO U T TMIN to TMAX Real f = 50 MHz Real 4 25 3 27 3
66 67 65 70 58 58 28 29 48 49 52 61 39 40 24 28 2 5 1.7 6.8 ±1 0.02 15 200 67 200 11.0 32 5.5 34 6.5
dBc dBc dBc dBc dBm dBm dBm dBm dBc dBc dBc dBc dBm dBm dBm dBm dBm dBm nV/ H z dB mV m V /° C µA dB V mA mA mA mA ns dB °C
Powered Up, VS = 5 V Powered Down, VS = 5 V Powered Up, VS = 10 V Powered Down, VS = 10 V f = 50 MHz, VS = 1 V p-p
Power-Up/Down Switching Power Supply Rejection Ratio OPERATING TEMPERATURE RANGE
NOTES 1 See Tables IIIII for complete list of S-Parameters. 2 Re: 50 . Specifications subject to change without notice.
28 3.8 30 4 15 58
40
+85
2
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AD8350
differential inputs and differential outputs unless noted.)
Parameter DYNAMIC PERFORMANCE 3 dB Bandwidth Bandwidth for 0.1 dB Flatness Slew Rate Settling Time Gain (S21)1 Gain Supply Sensitivity Gain Temperature Sensitivity Isolation (S12)1 NOISE/HARMONIC PERFORMANCE 50 MHz Signal Second Harmonic Third Harmonic Output Second Order Intercept2 Output Third Order Intercept2 250 MHz Signal Second Harmonic Third Harmonic Output Second Order Intercept2 Output Third Order Intercept2 1 dB Compression Point (RTI)2 Voltage Noise (RTI) Noise Figure INPUT/OUTPUT CHARACTERISTICS Differential Offset Voltage (RTI) Differential Offset Drift Input Bias Current Input Resistance CMRR Output Resistance POWER SUPPLY Operating Range Quiescent Current
AD8350-20SPECIFICATIONS (@ 25 C, V = 5 V, G = 20 dB, unless otherwise noted. All specifications refer to
S
Conditions VS = 5 V, VOUT = 1 V p-p VS = 10 V, VOUT = 1 V p-p VS = 5 V, VOUT = 1 V p-p VS = 10 V, VOUT = 1 V p-p VOUT = 1 V p-p 0.1%, VOUT = 1 V p-p VS = 5 V, f = 50 MHz VS = 5 V to 10 V, f = 50 MHz TMIN to TMAX f = 50 MHz
Min
Typ 0.7 0.9 90 90 2000 15 20 0.003 0.002 22
Max
Unit GHz GHz MHz MHz V/µs ns dB dB/V d B /° C dB
19
21
VS = 5 V, VOUT = 1 V p-p VS = 10 V, VOUT = 1 V p-p VS = 5 V, VOUT = 1 V p-p VS = 10 V, VOUT = 1 V p-p VS = 5 V VS = 10 V VS = 5 V VS = 10 V VS = 5 V, VOUT = 1 V p-p VS = 10 V, VOUT = 1 V p-p VS = 5 V, VOUT = 1 V p-p VS = 10 V, VOUT = 1 V p-p VS = 5 V VS = 10 V VS = 5 V VS = 10 V VS = 5 V VS = 10 V f = 150 MHz f = 150 MHz V O U T + VO U T TMIN to TMAX Real f = 50 MHz Real 4 25 3 27 3
65 66 66 70 56 56 28 29 45 46 55 60 37 38 24 28 2.6 1.8 1.7 5.6 ±1 0.02 15 200 52 200 11.0 32 5.5 34 6.5
dBc dBc dBc dBc dBm dBm dBm dBm dBc dBc dBc dBc dBm dBm dBm dBm dBm dBm n V / H z dB mV m V /° C µA dB V mA mA mA mA ns dB °C
Powered Up, VS = 5 V Powered Down, VS = 5 V Powered Up, VS = 10 V Powered Down, VS = 10 V f = 50 MHz, VS = 1 V p-p
Power-Up/Down Switching Power Supply Rejection Ratio OPERATING TEMPERATURE RANGE
NOTES 1 See Tables IIIII for complete list of S-Parameters. 2 Re: 50 .
28 3.8 30 4 15 45
40
+85
REV. A
3
AD8350
ABSOLUTE MAXIMUM RATINGS* PIN FUNCTION DESCRIPTIONS
Supply Voltage, VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 V Input Power Differential . . . . . . . . . . . . . . . . . . . . . . +8 dBm Internal Power Dissipation . . . . . . . . . . . . . . . . . . . . 400 mW JA SOIC (R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100°C/W JA µSOIC (RM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133°C/W Maximum Junction Temperature . . . . . . . . . . . . . . . . . 125°C Operating Temperature Range . . . . . . . . . . . 40°C to +85°C Storage Temperature Range . . . . . . . . . . . . 65°C to +150°C Lead Temperature Range (Soldering 60 sec) . . . . . . . . . 300°C
*Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Pin 1, 8
Function IN+, IN
Description Differential Inputs. IN+ and IN should be ac-coupled (pins have a dc bias of midsupply). Differential input impedance is 200 . Power-up Pin. A high level (5 V) enables the device; a low level (0 V) puts device in sleep mode. Positive Supply Voltage. 5 V to 10 V. Differential Outputs. OUT+ and OUT should be ac-coupled (pins have a dc bias of midsupply). Differential input impedance is 200 . Common External Ground Reference.
2
ENBL
3 4, 5
VCC OUT+, OUT
PIN CONFIGURATION
IN+ 1 ENBL 2
8
6, 7
GND
IN
GND TOP VIEW VCC 3 (Not to Scale) 6 GND
7 5
AD8350
OUT+ 4
OUT
ORDERING GUIDE
Model AD8350AR15 AD8350AR15-REEL AD8350AR15-REEL7 AD8350ARM15 AD8350ARM15-REEL AD8350ARM15-REEL7 AD8350AR20 AD8350AR20-REEL AD8350AR20-REEL7 AD8350ARM20 AD8350ARM20-REEL AD8350ARM20-REEL7 AD8350-EVAL
Temperature Range 40°C to +85°C 40°C to +85°C 40°C to +85°C 40°C to +85°C 40°C to +85°C 40°C to +85°C 40°C to +85°C 40°C to +85°C 40°C to +85°C 40°C to +85°C 40°C to +85°C 40°C to +85°C
Package Description 8-Lead SOIC 8-Lead SOIC 13" Reel 8-Lead SOIC 7" Reel 8-Lead microSOIC 8-Lead microSOIC 13" Reel 8-Lead microSOIC 7" Reel 8-Lead SOIC 8-Lead SOIC 13" Reel 8-Lead SOIC 7" Reel 8-Lead microSOIC 8-Lead microSOIC 13" Reel 8-Lead microSOIC 7" Reel SOIC Evaluation Board
Package Option SO-8 SO-8 SO-8 RM-8 RM-8 RM-8 SO-8 SO-8 SO-8 RM-8 RM-8 RM-8
Brand Code Standard Standard Standard J2N J2N J2N Standard Standard Standard J2P J2P J2P
CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8350 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
4
REV. A
Typical Performance CharacteristicsAD8350
50
20
25 VCC = 10V
SUPPLY CURRENT mA
40 VCC = 10V
15
GAIN dB
VCC = 10V
GAIN dB
20 VCC = 5V 15
30 VCC = 5V 20
10
5
10
10 VCC = 5V
0 40
20
0 20 40 TEMPERATURE C
0
60 80
1
10
100 1k FREQUENCY MHz
10k
5
1
10
100 1k FREQUENCY MHz
10k
TPC 1. Supply Current vs. Temperature
TPC 2. AD8350-15 Gain (S21) vs. Frequency
TPC 3. AD8350-20 Gain (S21) vs. Frequency
50
50
00
3
3
5
300
300
400
SOIC
IMPEDANCE
IMPEDANCE
IMPEDANCE
250
VCC = 10V
250
VCC = 10V
300
SOIC
200 VCC = 5V 150
200
200
150
VCC = 5V
100
100 1 10 100 FREQUENCY MHz 1k
100 1 10 100 FREQUENCY MHz 1k
0
0
10 100 FREQUENCY MHz
1000
TPC 4. AD8350-15 Input Impedance vs. Frequency
TPC 5. AD8350-20 Input Impedance vs. Frequency
TPC 6. AD8350-15 Output Impedance vs. Frequency
00 SOIC 600
5
10
8
10
15
ISOLATION dB
IMPEDANCE
ISOLATION dB
VCC = 10V 20
400
SOIC
15
VCC = 10V
200
20
VCC = 5V
25
VCC = 5V
0
0
100 10 FREQUENCY MHz
1000
25 1 10 100 1k FREQUENCY MHz 10k
30
1
10
100 1k FREQUENCY MHz
10k
TPC 7. AD8350-20 Output Impedance vs. Frequency
TPC 8. AD8350-15 Isolation (S12) vs. Frequency
TPC 9. AD8350-20 Isolation (S12) vs. Frequency
REV. A
5
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