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Details, datasheet, quote on part number:AD8351
 
 
Part:AD8351
Description:Low Distortion Fully Differential RF / if Amplifier
Company:Analog Devices
Datasheet:Download AD8351 datasheet   File size : 584 kB
Request For quote:  Find where to buy AD8351
 



Datasheet text preview:
Low Distortion Differential RF/IF Amplifier AD8351
FEATURES ­3 dB Bandwidth of 2.2 GHz for AV = 12 dB Single Resistor Programmable Gain 0 dB £ AV £ 26 dB Differential Interface Low Noise Input Stage 2.7 nV/÷Hz @ AV = 10 dB Low Harmonic Distortion ­79 dBc Second @ 70 MHz ­81 dBc Third @ 70 MHz OIP3 of 31 dBm @ 70 MHz Single-Supply Operation: 3 V to 5.5 V Low Power Dissipation 28 mA @ 5 V Adjustable Output Common-Mode Voltage Fast Settling and Overdrive Recovery Slew Rate of 13,000 V/ sec Power-Down Capability 10-Lead MSOP Package APPLICATIONS Differential ADC Drivers Single-Ended-to-Differential Conversion IF Sampling Receivers RF/IF Gain Blocks SAW Filter Interfacing FUNCTIONAL BLOCK DIAGRAM
AD8351
VOCM
PWUP
BIAS CELL

VPOS

RGP1

INHI
INLO
RGP2

OPHI
OPLO
COMM

0 ­10 ­20 ­30 ­40 ­50 ­60 ­70 ­80 ­90 ­100 ­110 ­120 ­130 0 5 10 15 20 25 30 35 + 2 3 AD8351 WITH 10 dB OF GAIN DRIVING THE AD6645 (RL = 1k ) ANALOG INPUT: 70MHz ENCODE : 80MHZ SNR : 69.1dB FUND : ­1.1dBFS HD2 : ­78.5dBc HD3 : ­80.7dBc THD : ­75.9dBc SFDR : 78.2dBc
100nF 25

INHI RG 200 INLO

AD 351 AD88351
100nF 5

D6645 14-BIT ADC
A

GENERAL DESCRIPTION

The AD8351 is a low cost differential amplifier useful in RF and IF applications up to 2.2 GHz. The voltage gain can be set from unity to 26 dB using a single external gain resistor. The AD8351 provides a nominal 150 W differential output impedance. The excellent distortion performance and low noise characteristics of this device allow for a wide range of applications. The AD8351 is designed to satisfy the demanding performance requirements of communications transceiver applications. The device can be used as a general-purpose gain block, an ADC driver,

and a high speed data interface driver, among other functions. The AD8351 can also be used as a single-ended-to-differential amplifier with similar distortion products as in the differential configuration. The exceptionally good distortion performance makes the AD8351 an ideal solution for 12-bit and 14-bit IF sampling receiver designs. Fabricated in ADI's high speed XFCB process, the high bandwidth of the AD8351 provides high frequency performance and low distortion. The quiescent current of the AD8351 is 28 mA typically. The AD8351 amplifier comes in a compact 10-lead MSOP package and will operate over the temperature range of ­40C to +85C.

REV. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective companies.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © 2003 Analog Devices, Inc. All rights reserved.

R = 150 , = 110 (A = cd noted AD8351­SPECIFICATIONS s(Vpe=if5ieV, differentially,Runless otherwise10 dB),.)f = 70 MHz, T = 25 C, parameters
S L G V

Parameter DYNAMIC PERFORMANCE ­3 dB Bandwidth

Conditions GAIN = 6 dB, VOUT £ 1.0 V p-p GAIN = 12 dB, VOUT £ 1.0 V p-p GAIN = 18 dB, VOUT £ 1.0 V p-p 0 dB £ GAIN £ 20 dB, VOUT £ 1.0 V p-p 0 dB £ GAIN £ 20 dB, VOUT £ 1.0 V p-p Using 1% Resistor for RG, 0 dB £ AV £ 20 dB VS ± 5% ­40C to +85C RL = 1 kW, VOUT = 2 V step RL = 150 W, VS = 2 V step 1 V Step to 1% VIN = 4 V to 0 V Step, VOUT £ ± 10 mV

Min

Typ 3,000 2,200 600 200 400 ±1 0.08 3.9 13,000 7,500 <3 <2 ­67

Max

Unit MHz MHz MHz MHz MHz dB dB/V m d B / C V/ s V/ s ns ns dB

Bandwidth for 0.1 dB Flatness Bandwidth for 0.2 dB Flatness Gain Accuracy Gain Supply Sensitivity Gain Temperature Sensitivity Slew Rate Settling Time Overdrive Recovery Time Reverse Isolation (S12)

INPUT/OUTPUT CHARACTERISTICS Input Common-Mode Voltage Adjustment Range Max Output Voltage Swing 1 dB Compressed Output Common-Mode Offset Output Common-Mode Drift ­40C to +85C Output Differential Offset Voltage Output Differential Offset Drift ­40C to +85C Input Bias Current Input Resistance1 Input Capacitance1 CMRR Output Resistance1 Output Capacitance1 POWER INTERFACE Supply Voltage PWUP Threshold PWUP Input Bias Current Quiescent Current 3 PWUP at 5 V PWUP at 0 V

1.2 to 3.8 4.75 40 0.24 20 0.13 ± 15 5 0.8 43 150 0.8 5.5 1.3 100 25 28

V V p-p mV m V / C mV m V / C A kW pF dB W pF V V A A mA

32

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REV. A

SPECIFICATIONS
Parameter NOISE/DISTORTION 10 MHz Second/Third Harmonic Distortion2 Third-Order IMD Conditions Min Typ Max

AD8351
Unit

Output Third-Order Intercept Noise Spectral Density (RTI) 1 dB Compression Point 70 MHz Second/Third Harmonic Distortion2 Third-Order IMD

RL = 1 kW, VOUT = 2 V p-p RL = 150 W, VOUT = 2 V p-p RL = 1 kW, f1 = 9.5 MHz, f2 = 10.5 MHz, VOUT = 2 V p-p Composite RL = 150 W, f1 = 9.5 MHz, f2 = 10.5 MHz, VOUT = 2 V p-p Composite f1 = 9.5 MHz, f2 = 10.5 MHz

­95/­93 ­86/­71 ­90 ­70 33 2.65 13.5

dBc dBc dBc dBc dBm n V /÷ H z dBm

Output Third-Order Intercept Noise Spectral Density (RTI) 1 dB Compression Point 140 MHz Second/Third Harmonic Distortion2 Third-Order IMD

RL = 1 kW, VOUT = 2 V p-p RL = 150 W, VOUT = 2 V p-p RL = 1 kW, f1 = 69.5 MHz, f2 = 70.5 MHz, VOUT = 2 V p-p Composite RL = 150 W, f1 = 69.5 MHz, f2 = 70.5 MHz, VOUT = 2 V p-p Composite f1 = 69.5 MHz, f2 = 70.5 MHz

­79/­81 ­65/­66 ­85 ­69 31 2.70 13.3

dBc dBc dBc dBc dBm n V /÷ H z dBm

Output Third-Order Intercept Noise Spectral Density (RTI) 1 dB Compression Point 240 MHz Second/Third Harmonic Distortion2 Third-Order IMD

RL = 1 kW, VOUT = 2 V p-p RL = 150 W, VOUT = 2 V p-p RL = 1 kW, f1 = 139.5 MHz, f2 = 140.5 MHz, VOUT = 2 V p-p Composite RL = 150 W, f1 = 139.5 MHz, f2 = 140.5 MHz, VOUT = 2 V p-p Composite f1 = 139.5 MHz, f2 = 140.5 MHz

­69/­69 ­54/­53 ­79 ­67 29 2.75 13

dBc dBc dBc dBc dBm n V /÷ H z dBm

Output Third-Order Intercept Noise Spectral Density (RTI) 1 dB Compression Point

RL = 1 kW, VOUT = 2 V p-p RL = 150 W, VOUT = 2 V p-p RL = 1 kW, f1 = 239.5 MHz, f2 = 240.5 MHz, VOUT = 2 V p-p Composite RL = 150 W, f1 = 239.5 MHz, f2 = 240.5 MHz, VOUT = 2 V p-p Composite f1 = 239.5 MHz, f2 = 240.5 MHz

­60/­66 ­46/­50 ­76 ­62 27 2.90 13

dBc dBc dBc dBc dBm n V /÷ H z dBm

Notes 1 Values are specified differentially. 2 See Applications section of data sheet for single-ended-to-differential performance.

REV. A

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AD8351
ABSOLUTE MAXIMUM RATINGS* PIN CONFIGURATION
PWUP 1 RGP1 2 INHI 3
10 VOCM

Supply Voltage VPOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V PWUP Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VPOS Internal Power Dissipation . . . . . . . . . . . . . . . . . . . . . 320 mW J A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 5 C / W Maximum Junction Temperature . . . . . . . . . . . . . . . . . 125C Operating Temperature Range . . . . . . . . . . . . ­40C to +85C Storage Temperature Range . . . . . . . . . . . . . ­65C to +150C Lead Temperature Range (Soldering 60 sec) . . . . . . . . . 300C
*Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

AD8351

9

VPOS

8 OPHI TOP VIEW INLO 4 (Not to Scale) 7 OPLO

RGP2 5

6

COMM

ORDERING GUIDE

Model AD8351ARM AD8351ARM-REEL7 AD8351-EVAL

Temp. Range ­40C to +85C

Package Description Tube, 10-Lead MSOP 7" Tape and Reel Evaluation Board

Package Option RM-10

Branding JDA

PIN FUNCTION DESCRIPTIONS

Pin No. 1 2 3 4 5 6 7 8 9 10

Name PWUP RGP1 INHI INLO RGP2 COMM OPLO OPHI VPOS VOCM

Function Apply a positive voltage (1.3 V £ VPWUP £ VPOS ) to activate device. Gain Resistor Input 1. Balanced Differential Input. Biased to midsupply, typically ac-coupled Balanced Differential Input. Biased to midsupply, typically ac-coupled. Gain Resistor Input 2. Device Common. Connect to low impedance ground. Balanced Differential Output. Biased to VOCM, typically ac-coupled. Balanced Differential Output. Biased to VOCM, typically ac-coupled. Positive Supply Voltage. 3 V to 5.5 V. Voltage applied to this pin sets the common-mode voltage at both the input and output. Typically decoupled to ground with a 0.1 mF capacitor.

CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8351 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

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REV. A

Typical Performance Characteristics­ AD8351
(VS = 5 V, T = 25 C, unless otherwise noted.)
20 RG = 20

30 RG = 20

15 RG = 80

25

20
GAIN ­ dB GAIN ­ dB

RG = 80

10 RG = 200 5

15 RG = 200 10

0

5

­5

1

10

100 FREQUENCY ­ MHz

1000

10000

0

1

10

100 FREQUENCY ­ MHz

1000

10000

TPC 1. Gain vs. Frequency for a 150 W Differential Load (AV = 6 dB, 12 dB, and 18 dB)
5 30 25 20

TPC 4. Gain vs. Frequency for a 1 kW Differential Load (AV = 10 dB, 18 dB, and 26 dB)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 ­0.1 ­0.2 ­0.3 ­0.4 ­0.5 ­0.6 ­0.7 ­0.8 ­0.9 ­1.0 1

RL = 1k

GAIN FLATNESS ­ dB

GAIN ­ dB

15 10 5 0 ­5 RL = 1k ­10 10 3 100 RG ­ 1k 10k RL = 150

RL = 150 RL = 150 RL = 1k

RL = OPEN

10 100 FREQUENCY ­ MHz

1000

TPC 2. Gain vs. Gain Resistor, RG (f = 100 MHz, RL = 150 W, 1 kW, and Open)
10.75 10.50
0 ­10

TPC 5. Gain Flatness vs. Frequency (RL = 150 W and 1 kW, AV =10 dB)

10.50
GAIN (RL = 1k ) ­ dB

10.25
­20

GAIN (RL = 150 ) ­ dB

ISOLATION ­ dB

10.25

10.00

­30 ­40 ­50 ­60 ­70

10.00

9.75

9.75

9.50

9.50

9.25
­80

9.25 ­50

­30

­10

10 30 50 TEMPERATURE ­ C

70

90

9.00 110

­90 0 100 200 300 400 500 600 700 FREQUENCY ­ MHz 800 900 1000

TPC 3. Gain vs. Temperature at 100 MHz (AV = 10 dB)

TPC 6. Isolation vs. Frequency (AV = 10 dB)

REV. A

­5­