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Details, datasheet, quote on part number:AD8354
 
 
Part:AD8354
Description:100 MHZ - 2.7 GHZ RF Gain Blocks, Silicon Bipolar Amplifiers
Company:Analog Devices
Datasheet:Download AD8354 datasheet   File size : 229 kB
Request For quote:  Find where to buy AD8354
 



Datasheet text preview:
a
FEATURES Fixed Gain of 20 dB Operational Frequency of 100 MHz to 2.7 GHz Linear Output Power Up to 4 dBm T Input/Output Internally Matched to 50 emperature and Power Supply Stable Noise Figure 4.2 dB Power Supply 3 V or 5 V APPLICATIONS VCO Buffers General Tx/Rx Amplification Power Amplifier Predriver Low Power Antenna Driver PRODUCT DESCRIPTION
INPT

100 MHz­2.7 GHz RF Gain Block AD8354
FUNCTIONAL BLOCK DIAGRAM
BIAS AND VREF VPOS

VOUT

COM1

AD8354

COM2

The AD8354 is a broadband, fixed-gain linear amplifier that operates at frequencies from 100 MHz up to 2.7 GHz. It is intended for use in a wide variety of wireless devices including cellular, broadband, CATV, and LMDS/MMDS applications. By taking advantage of Analog Devices' high performance complementary Si bipolar process, these gain blocks provide excellent stability over process, temperature, and power supply. This amplifier is single-ended and internally matched to 50 with a return loss of greater than 10 dB over the full operating frequency range. The AD8354 provides linear output power of nearly 4.3 dBm with 20 dB of gain at 900 MHz when biased at 3 V and an external RF choke is connected between the power supply and the output pin. The dc supply current is 24 mA. At 900 MHz, the output third order intercept (OIP3) is greater than 18 dBm, and is 14 dBm at 2.7 GHz.

The noise figure is 4.2 dB at 900 MHz. The reverse isolation (S12) is ­33 dB at 900 MHz. The AD8354 can also operate with a 5 V power supply, in which case no external inductor is required. Under these conditions, the AD8354 delivers 4.8 dBm with 20 dB of gain at 900 MHz. The dc supply current is 26 mA. At 900 MHz, the OIP3 is greater than 19 dBm and is 15 dBm at 2.7 GHz. The noise figure is 4.4 dB at 900 MHz. The reverse isolation (S12) is ­33 dB. The AD8354 is fabricated on Analog Devices' proprietary, highperformance 25 GHz Si complementary bipolar IC process. The AD8354 is available in a chip scale package that utilizes an exposed paddle for excellent thermal impedance and low impedance electrical connection to ground. It operates over a ­40°C to +85°C temperature range. An evaluation board is available.

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Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2002

V, T = 25 C, 100 AD8354­SPECIFICATIONS u(Vnle=ss3otherwise noted.) nH external inductor between VOUT and VPOS, Z = 50
S A O

,

Parameters OVERALL FUNCTION Frequency Range Gain

Conditions

Min 0.1

Typ

Max 2.7

Unit GHz dB dB dB dB dB dB dB/V dB/V dB/V dB dB dB dB dB dB dBm dBm dBm dB dB dB dB dB dB dBm dBm dBm dBm dB dB dB

Delta Gain

Gain Supply Sensitivity

Reverse Isolation (S12)

f = 900 MHz f = 1.9 GHz f = 2.7 GHz f = 900 MHz, ­40°C TA +85°C f = 1.9 GHz, ­40°C TA +85°C f = 2.7 GHz, ­40°C TA +85°C VPOS ± 10%, f = 900 MHz f = 1.9 GHz f = 2.7 GHz f = 900 MHz f = 1.9 GHz f = 2.7 GHz Pin RFIN f = 900 MHz f = 1.9 GHz f = 2.7 GHz Pin VOUT f = 900 MHz, 1 dB compression f = 1.9 GHz f = 2.7 GHz f = 900 MHz, ­40°C TA +85°C f = 1.9 GHz, ­40°C TA +85°C f = 2.7 GHz, ­40°C TA +85°C f = 900 MHz f = 1.9 GHz f = 2.7 GHz f = 900 MHz, f = 1.9 GHz, f = 2.7 GHz, f = 900 MHz, f = 900 MHz f = 1.9 GHz f = 2.7 GHz Pin VPOS 2.7 16 ­40°C TA +85°C f = 1 MHz, PIN = ­28 dBm f = 1 MHz, PIN = ­28 dBm f = 1 MHz, PIN = ­28 dBm f = 1 MHz, PIN = ­28 dBm

19.5 18.6 17.1 ­0.97 ­1.05 ­1.33 0.54 0.37 0.2 ­33.5 ­38 ­32.9 24.4 23 12.7 4.6 3.7 2.7 0.7 0.7 0.8 23.6 16.5 14.6 19 16 14.2 29.7 4.2 4.8 5.4 3 23 6.2 33 3.3 31

RF INPUT INTERFACE Input Return Loss

RF OUTPUT INTERFACE Output Compression Point

Delta Compression Point

Output Return Loss

DISTORTION/ NOISE Output Third Order Intercept

Output Second Order Intercept Noise Figure

POWER INTERFACE Supply Voltage Total Supply Current Supply Voltage Sensitivity Temperature Sensitivity
Specifications subject to change without notice.

V mA mA/V A/°C

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AD8354

SPECIFICATIONS (V = 5 V, T = 25 C, no external inductor between VOUT and VPOS, Z = 50
S A O

, unless otherwise noted.)
Typ Max 2.7 19.5 18.7 17.3 ­0.93 ­0.99 ­1.21 0.32 0.21 0.08 ­33.5 ­37.6 ­32.9 24.4 23.9 13.5 4.8 4.6 3.6 0.37 ­0.14 ­0.05 23.7 22.5 17.6 19.3 17.3 15.3 28.7 4.4 5 5.6 Unit GHz dB dB dB dB dB dB dB/V dB/V dB/V dB dB dB dB dB dB dBm dBm dBm dB dB dB dB dB dB dBm dBm dBm dBm dB dB dB 5.5 34 V mA mA/V A/°C

Parameters OVERALL FUNCTION Frequency Range Gain

Conditions

Min 0.1

Delta Gain

Gain Supply Sensitivity

Reverse Isolation (S12)

f = 900 MHz f = 1.9 GHz f = 2.7 GHz f = 900 MHz, ­40°C TA +85°C f = 1.9 GHz, ­40°C TA +85°C f = 2.7 GHz, ­40°C TA +85°C VPOS ± 10%, f = 900 MHz f = 1.9 GHz f = 2.7 GHz f = 900 MHz f = 1.9 GHz f = 2.7 GHz Pin RFIN f = 900 MHz f = 1.9 GHz f = 2.7 GHz Pin VOUT f = 900 MHz f = 1.9 GHz f = 2.7 GHz f = 900 MHz, ­40°C TA +85°C f = 1.9 GHz, ­40°C TA +85°C f = 2.7 GHz, ­40°C TA +85°C f = 900 MHz f = 1.9 GHz f = 2.7 GHz f = 900 MHz, f = 1.9 GHz, f = 2.7 GHz, f = 900 MHz, f = 900 MHz f = 1.9 GHz f = 2.7 GHz Pin VPOS TA = 27°C ­40°C TA +85°C 4.5 17 f = 50 MHz, PIN = ­30 dBm f = 50 MHz, PIN = ­30 dBm f = 50 MHz, PIN = ­30 dBm f = 1 MHz, PIN = ­28 dBm

RF INPUT INTERFACE Input Return Loss

RF OUTPUT INTERFACE Output 1 dB Compression

Delta Compression Point

Output Return Loss

DISTORTION/ NOISE Output Third Order Intercept

Output Second Order Intercept Noise Figure

POWER INTERFACE Supply Voltage Total Supply Current Supply Voltage Sensitivity Temperature Sensitivity
Specifications subject to change without notice.

5 25 4 28

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AD8354
ABSOLUTE MAXIMUM RATINGS* PIN CONFIGURATION

Supply Voltage VPOS . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5 V Input Power (re: 50 ) . . . . . . . . . . . . . . . . . . . . . . . 10 dBm Equivalent Voltage . . . . . . . . . . . . . . . . . . . . . 700 mV rms Internal Power Dissipation Paddle Not Soldered . . . . . . . . . . . . . . . . . . . . . . . 325 mW Paddle Soldered . . . . . . . . . . . . . . . . . . . . . . . . . . . 812 mW JA (Paddle Not Soldered) . . . . . . . . . . . . . . . . . . . . 200°C/W JA (Paddle Soldered) . . . . . . . . . . . . . . . . . . . . . . . . . 80°C/W Maximum Junction Temperature . . . . . . . . . . . . . . . . 150°C Operating Temperature Range . . . . . . . . . . . ­40°C to +85°C Storage Temperature Range . . . . . . . . . . . . ­65°C to +150°C Lead Temperature Range (Soldering 60 sec) . . . . . . . . 240°C
*Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

COM1 1 NC
2

8

COM1

VOUT TOP VIEW INPT 3 (Not to Scale) 6 VPOS
7

AD8354

COM2 4

5

COM2

NC = NO CONNECT

PIN FUNCTION DESCRIPTIONS

Pin 1, 8

Mnemonic Description COM1 Device Common. Connect to low impedance ground. RF Input Connection. Must be ac-coupled. Device Common. Connect to low impedance ground. Positive Supply Voltage No Connection RF Output Connection. Must be ac-coupled.

3 4, 5

INPT COM2

ORDERING GUIDE Model Temperature Range Package Description Package Option

AD8354ACP­REEL7 ­40°C to +85°C 7" Tape and Reel CP-8 AD8354­EVAL Evaluation Board

6 2 7

VPOS NC VOUT

CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8354 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!
ESD SENSITIVE DEVICE

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Typical Performance Characteristics­AD8354
90 120 60 120 90 60

150

30

150

30

180

0

180

0

210

330

210

330

240 270

300

240 270

300

TPC 1. S11 vs. Frequency, VS = 3 V, TA = 25 C, 100 MHz f 3.0 GHz

TPC 4. S22 vs. Frequency, VS = 3 V, TA = 25 C, 100 MHz f 3.0 GHz

25 GAIN AT 3.3V 20

25

20

GAIN AT ­40 C

GAIN AT 2.7V
GAIN ­ dB

GAIN ­ dB

15

GAIN AT 3.0V

15 GAIN AT +25 C GAIN AT +85 C 10

10

5

5

0 0 500 1000 1500 2000 FREQUENCY ­ MHz 2500 3000

0

0

500

1000

1500

2000

2500

3000

FREQUENCY ­ MHz

TPC 2. Gain vs. Frequency, VS = 2.7 V, 3.0 V, and 3.3 V, TA = 25 C

TPC 5. Gain vs. Frequency, VS = 3 V, TA = ­40 C, +25 C, and +85 C

0 ­5
REVERSE ISOLATION ­ dB

0 ­5 REVERSE ISOLATION ­ dB ­10 ­15 ­20 ­25 S12 AT ­40 C ­30 S12 AT +25 C ­35

­10 ­15 ­20 ­25 ­30 ­35 S12 AT 2.7V ­40 0 500 1000 1500 2000 S12 AT 3.0V 2500 3000 S12 AT 3.3V

S12 AT +85 C ­40 0 500 1000 1500 2000 FREQUENCY ­ MHz 2500 3000

FREQUENCY ­ MHz

TPC 3. Reverse Isolation vs. Frequency, VS = 2.7 V, 3 V, and 3.3 V, TA = 25 C

TPC 6. Reverse Isolation vs. Frequency, VS = 3 V, TA = ­40 C, +25 C, and +85 C

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