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Details, datasheet, quote on part number:AD835AN
 
 
Part:AD835AN
Category:Analog & Mixed-Signal Processing => Analog Multipliers
Description:250 Mhz, Voltage Output 4-Quadrant Multiplier
Company:Analog Devices
Datasheet:Download AD835AN datasheet   File size : 206 kB
Request For quote:  Find where to buy AD835AN
 



Datasheet text preview:
a
FEATURES Simple: Basic Function is W = XY + Z Complete: Minimal External Components Required Very Fast: Settles to 0.1% of FS in 20 ns DC-Coupled Voltage Output Simplifies Use High Differential Input Impedance X, Y and Z Inputs Low Multiplier Noise: 50 nV/ Hz APPLICATIONS Very Fast Multiplication, Division, Squaring Wideband Modulation and Demodulation Phase Detection and Measurement Sinusoidal Frequency Doubling Video Gain Control and Keying Voltage Controlled Amplifiers and Filters
X1 X2

250 MHz, Voltage Output 4-Quadrant Multiplier AD835
FUNCTIONAL BLOCK DIAGRAM
X = X1 ­X2

AD835

XY



XY + Z

+1

W OUTPUT

Y1 Y2 Y = Y1 ­Y2

Z INPUT

PRODUCT DESCRIPTION

PRODUCT HIGHLIGHTS

The AD835 is a complete four-quadrant voltage output analog multiplier fabricated on an advanced dielectrically isolated complementary bipolar process. It generates the linear product of its X and Y voltage inputs, with a ­3 dB output bandwidth of 250 MHz (a small signal rise time of 1 ns). Full-scale (­1 V to +1 V) rise/fall times are 2.5 ns (with the standard RL of 150 ) and the settling time to 0.1% under the same conditions is typically 20 ns. Its differential multiplication inputs (X, Y) and its summing input (Z) are at high impedance. The low impedance output voltage (W) can provide up to ± 2.5 V and drive loads as low as 25 . Normal operation is from ± 5 V supplies. Though providing state-of-the-art speed, the AD835 is simple to use and versatile. For example, as well as permitting the addition of a signal at the output, the Z input provides the means to operate the AD835 with voltage gains up to about ×10. In this capacity, the very low product noise of this multiplier (50 nVHz) makes it much more useful than earlier products. The AD835 is available in an 8-pin plastic mini-DIP package (N) and an 8-pin SOIC (R) and is specified to operate over the ­40°C to +85°C industrial temperature range.

1. The AD835 is the first monolithic 250 MHz four quadrant voltage output multiplier. 2. Minimal external components are required to apply the AD835 to a variety of signal processing applications. 3. High input impedances (100 k 2 pF) make signal source loading negligible. 4. High output current capability allows low impedance loads to be driven. 5. State of the art noise levels achieved through careful device optimization and the use of a special low noise bandgap voltage reference. 6. Designed to be easy to use and cost effective in applications which formerly required the use of hybrid or board level solutions.

REV. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. © Analog Devices, Inc., 1994 One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A. Tel: 617/329-4700 Fax: 617/326-8703

AD835­SPECIFICATIONS
Model
TRANSFER FUNCTION Parameter INPUT CHARACTERISTICS (X, Y) Differential Voltage Range Differential Clipping Level Low Frequency Nonlinearity vs. Temperature Common-Mode Voltage Range Offset Voltage vs. Temperature CMRR Bias Current vs. Temperature Offset Bias Current Differential Resistance Single-Sided Capacitance Feedthrough, X Feedthrough, Y DYNAMIC CHARACTERISTICS ­3 dB Small-Signal Bandwidth ­0.1 dB Gain Flatness Frequency Slew Rate Differential Gain Error, X Differential Phase Error, X Differential Gain Error, Y Differential Phase Error, Y Harmonic Distortion Settling Time, X or Y SUMMING INPUT (Z) Gain ­3 dB Small-Signal Bandwidth Differential Input Resistance Single Sided Capacitance Maximum Gain Bias Current OUTPUT CHARACTERISTICS Voltage Swing vs. Temperature Voltage Noise Spectral Density Offset Voltage vs. Temperature2 Short Circuit Current Scale Factor Error vs. Temperature Linearity (Relative Error)3 vs. Temperature POWER SUPPLIES Supply Voltage For Specified Performance Quiescent Supply Current vs. Temperature PSRR at Output vs. Vp PSRR at Output vs. Vn

(TA = +25 C, VS =

5 V, RL = 150

, CL 5 pF unless otherwise noted)

AD835AN/AR
W= ( X 1 ­ X 2)(Y 1 ­ Y 2) U +Z

Conditions VCM = 0 X = ± 1 V, Y = 1 V Y = ± 1 V, X = 1 V TMIN to TMAX1 X = ± 1 V, Y = 1 V Y = ± 1 V, X = 1 V TMIN to TMAX1 f 100 kHz; ± 1 V p-p TMIN to TMAX1

Min

Typ ±1 ± 1.4 0.3 0.1

Max

Unit V V % FS % FS % FS % FS V mV mV dB µA µA µA k pF dB dB MHz MHz V/µs % Degrees % Degrees dB dB ns

1.2

0.5 0.3 0.7 0.5 +3 20 ± 25 20 27

­2.5 70

±3 10 2 100 2

X = ± 1 V, Y = 0 V Y = ± 1 V, X = 0 V 150 W = ­2.5 V to +2.5 V f = 3.58 MHz f = 3.58 MHz f = 3.58 MHz f = 3.58 MHz X or Y = 10 dBm, 2nd and 3rd Harmonic Fund = 10 MHz Fund = 50 MHz To 0.1%, W = 2 V p-p From Z to W, f 10 MHz 0.990

­46 ­60 250 15 1000 0.3 0.2 0.1 0.1 ­70 ­40 20 0.995 250 60 2 50 50 ± 2.5 50 ± 25 75 ±5 ± 0.5 75 ± 10 8 ±9 1.0 ± 1.25

X, Y to W, Z Shorted to W, f = 1 kHz

MHz k pF dB µA V V nV/ Hz mV mV mA % FS % FS % FS % FS

TMIN to TMAX1 X = Y = 0, f < 10 MHz TMIN to TMAX1 TMIN to TMAX1 TMIN to TMAX1

± 2.2 ± 2.0

± 4.5 TMIN to TMAX1 +4.5 V to +5.5 V ­4.5 V to ­5.5 V

±5 16

± 5.5 25 26 0.5 0.5

V mA mA %/V %/V

NOTES 1 TMIN = ­40°C, TMAX = +85°C. 2 Normalized to zero at +25°C. 3 Linearity is defined as residual error after compensating for input offset, output voltage offset and scale factor errors. All min and max specifications are guaranteed. Specifications in boldface are tested on all production units at final electrical test. Specifications subject to change without notice.

­2­

REV. A

AD835
ABSOLUTE MAXIMUM RATINGS 1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .± 6 V Internal Power Dissipation2 . . . . . . . . . . . . . . . . . . . . 300 mW Operating Temperature Range . . . . . . . . . . . . . ­40°C to +85C Storage Temperature Range . . . . . . . . . . . . ­65°C to +150°C Lead Temperature, Soldering 60 sec . . . . . . . . . . . . . . +300°C ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500 V
NOTES 1 Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum ratings for extended periods may affect device reliability. 2 Thermal Characteristics: 8-Pin Plastic DIP (N): JC = 35°C/W; JA = 90°C/W 8-Pin Plastic SOIC (R): JC = 45°C/W; JA = 115°C/W.

PIN CONNECTIONS 8-Pin Plastic DIP (N) 8-Pin Plastic SOIC (R)
Y1 Y2 VN Z 1 2 3 4 8 X1 X2 VP W

AD835
TOP VIEW (Not to Scale)

7 6 5

ORDERING GUIDE

Model AD835AN AD835AR

Temperature Range ­40°C to +85°C ­40°C to +85°C

Package Options* N-8 R-8

*N = Plastic DIP; R = Small Outline IC Plastic Package (SOIC).

Typical Performance Characteristics
DG DP (NTSC) FIELD = 1 LINE = 18 0.00 0.06 0.11 0.4 Wfm FCC COMPOSITE 0.16 0.19 0.20
X, Y, Z CH = 0dBm RL = 150 CL 5pF

DIFFERENTIAL GAIN ­ %

0.2 0.0 ­0.2 ­0.4 1ST 0.3 0.2 0.1 0.0 ­0.1 ­0.2 ­0.3 1ST 2ND 3RD 4TH MIN = 0.00 MAX = 0.06 p-p = 0.06 5TH 6TH
­8 ­10

MAGNITUDE ­ dB

GAIN 0 ­2 PHASE ­4 ­6 ­90 ­180 90 0

2ND 0.02

3RD 0.02

4TH 0.03

5TH 0.03

6TH 0.06

0.00

DIFFERENTIAL PHASE ­ Degrees

1M

10M 100M FREQUENCY ­ Hz

1G

Figure 1. Typical Composite Output Differential Gain & Phase, NTSC for X Channel; f = 3.58 MHz, RL = 150
DG DP (NTSC) FIELD = 1 LINE = 18 0.00 0.01 ­0.00 0.3 Wfm 0.00 FCC COMPOSITE ­0.01 ­0.20 MIN = ­0.02 MAX = 0.01 p-p/MAX = 0.03

Figure 3. Gain & Phase vs. Frequency of X, Y, Z Inputs

DIFFERENTIAL GAIN ­ %

0.2 0.1 0.0 ­0.1 ­0.3

X, Y CH = OdBm RL = 150 CL 5pF 0

MAGNITUDE ­ dB

­0.2 1ST 0.00 2ND 0.03 3RD 0.04 4TH 0.07 5TH 0.10 6TH 0.16

­0.1 ­0.2 ­0.3 ­0.4 ­0.5

DIFFERENTIAL PHASE ­ Degrees

0.20 0.10 0.00 ­0.10 ­0.20 1ST 2ND 3RD 4TH MIN = 0.00 MAX = 0.16 p-p = 0.16 5TH 6TH

­0.6 300k 1M 10M 100M FREQUENCY ­ Hz 1G

Figure 2. Typical Composite Output Differential Gain & Phase, NTSC for Y Channel; f = 3.58 MHz, RL = 150

Figure 4. Gain Flatness to 0.1 dB

REV. A

­3­

PHASE ­ Degrees

MIN = 0.00 MAX = 0.20 p-p/MAX = 0.20

2

180

AD835
X, Y CH = 5dBm RL = 150 CL < 5pF ­10

0

MAGNITUDE ­ dB

­30 ­40 X FEEDTHROUGH ­50 ­60 Y FEEDTHROUGH

Y FEEDTHROUGH

40 60

X FEEDTHROUGH

80

1M

10M 100M FREQUENCY ­ Hz

1G

1M

10M 100M FREQUENCY ­ Hz

1G

Figure 5. X and Y Feedthrough vs. Frequency

Figure 8. CMRR vs. Frequency for X or Y Channel, RL = 150 , CL 5 pF

0dBm ON SUPPLY X, Y = 1V ­10 PSRR ON V+

PSRR ­ dB

0.200V

­20 ­30 ­40 ­50 PSRR ON V­

GND

­0.200V

­60

100 mV

10ns
300k 1M 10M 100M FREQUENCY ­ Hz 1G

Figure 6. Small Signal Pulse Response at W Output, RL = 150 , CL 5 pF, X Channel = ±0.2 V, Y Channel = ±1.0 V

Figure 9. PSRR vs. Frequency for V+ and V­ Supply

10MHz

1V

GND

10dB/DIV

­1V
30MHz 20MHz

500 mV

10ns

Figure 7. Large Signal Pulse Response at W Output, RL = 150 , CL 5 pF, X Channel = ±1.0 V, Y Channel = ±1.0 V

Figure 10. Harmonic Distortion at 10 MHz; 10 dBm Input to X or Y Channels, RL = 150 , CL = 5 pF

­4­

REV. A

CMRR ­ dB

­20

20

AD835
15 OUTPUT OFFSET DRIFT WILL TYPICALLY BE WITHIN SHADED AREA
50MHz

10
VOS OUTPUT DRIFT ­ mV

5

10dB/DIV 100MHz 150MHz

0

­5

­10 OUTPUT VOS DRIFT, NORMALIZED TO 0 AT 25°C ­15 ­55 ­35 ­15 5 25 45 65 85 105 125

TEMPERATURE ­ °C

Figure 11. Harmonic Distortion at 50 MHz, 10 dBm Input to X or Y Channel, RL = 150 , CL 5 pF

Figure 14. VOS Output Drift vs. Temperature

35 30
3RD ORDER INTERCEPT ­ dBm

100MHz

X CH = 6dBm Y CH = 10dBm RL = 100

25 20

200MHz 10dB/DIV

300MHz

15 10 5 0 0 20 40 60 80 100 120 140 160 RF FREQUENCY INPUT X CHANNEL ­ MHz 180 200

Figure 12. Harmonic Distortion at 100 MHz, 10 dBm Input to X or Y Channel, RL = 150 , CL 5 pF

Figure 15. Fixed LO on Y Channel vs. RF Frequency Input to X Channel

35 30
+2.5V

3RD ORDER INTERCEPT ­ dBm

X CH = 6dBm Y CH = 10dBm RL = 100

25 20 15 10

GND

­2.5V

5

1V

10ns
0 0 20 40 60 80 100 120 140 160 LO FREQUENCY ON Y CH ­ MHz 180 200

Figure 13. Maximum Output Voltage Swing, RL = 50 , CL 5 pF

Figure 16. Fixed IF vs. LO Frequency on Y Channel

REV. A

­5­