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Details, datasheet, quote on part number:AD8551ARM2
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Datasheet text preview:
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FEATURES Low Offset Voltage: 1 V Input Offset Drift: 0.005 V/ C Rail-to-Rail Input and Output Swing +5 V/+2.7 V Single-Supply Operation High Gain, CMRR, PSRR: 130 dB Ultralow Input Bias Current: 20 pA Low Supply Current: 700 A/Op Amp Overload Recovery Time: 50 s No External Capacitors Required APPLICATIONS Temperature Sensors Pressure Sensors Precision Current Sensing Strain Gage Amplifiers Medical Instrumentation Thermocouple Amplifiers GENERAL DESCRIPTION
NC IN A IN A V
Zero-Drift, Single-Supply, Rail-to-Rail Input/Output Operational Amplifiers AD8551/AD8552/AD8554
PIN CONFIGURATIONS 8-Lead MSOP (RM Suffix)
1 8 NC + OUT A VC N
8-Lead SOIC (R Suffix)
NC 1 IN A 2 IN A 3 +V 4 8 NC
AD8551
4 5 NC = NO CONNECT
AD8551
7 V+ 6 OUT A 5 NC
NC = NO CONNECT
8-Lead TSSOP (RU Suffix)
OUT A IN A +IN A V 1 8 V+ UT B IN B + OIN B
8-Lead SOIC (R Suffix)
AD8552
4 5
OUT A 1 IN A 2 IN A 3 +V 4
8 V+
AD8552
7 OUT B 6 IN B
This new family of amplifiers has ultralow offset, drift and bias current. The AD8551, AD8552 and AD8554 are single, dual and quad amplifiers featuring rail-to-rail input and output swings. All are guaranteed to operate from +2.7 V to +5 V single supply. The AD855x family provides the benefits previously found only in expensive autozeroing or chopper-stabilized amplifiers. Using Analog Devices' new topology these new zero-drift amplifiers combine low cost with high accuracy. No external capacitors are required. With an offset voltage of only 1 µV and drift of 0.005 µV/°C, t h e AD8551 is perfectly suited for applications where error sources cannot be tolerated. Temperature, position and press u r e sensors, medical equipment and strain gage amplifiers b e n e f i t greatly from nearly zero drift over their operating t e m p e r a t u r e range. The rail-to-rail input and output swings provided by the AD855x family make both high-side and lowside sensing easy. The AD855x family is specified for the extended industrial/ automotive (40°C to +125°C) temperature range. The AD8551 single is available in 8-lead MSOP and narrow 8-lead SOIC packages. The AD8552 dual amplifier is available in 8-lead narrow SO and 8-lead TSSOP surface mount packages. The AD8554 quad is available in narrow 14-lead SOIC and 14-lead TSSOP packages.
14-Lead TSSOP (RU Suffix)
OUT A IN A IN A V IN B IN B OUT B 1 14 UT D ND IN D VI O IN C IN C OUT C
5 +IN B
14-Lead SOIC (R Suffix)
OUT A 1 IN A 2 +IN A 3 V+ 4 +IN B 5 IN B 6 OUT B 7
14 OUT D 13
AD8554
7 8
IN D
12 +IN D
AD8554
11 +V 10 9 8
IN C IN C OUT C
REV. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 1999
AD8551/AD8552/AD8554SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (V
Parameter INPUT CHARACTERISTICS Offset Voltage Input Bias Current Input Offset Current Input Voltage Range Common-Mode Rejection Ratio Large Signal Voltage Gain1 Offset Voltage Drift OUTPUT CHARACTERISTICS Output Voltage High V OS IB I OS CMRR A VO VOS /T V OH
S
= +5 V, VCM = +2.5 V, V O = +2.5 V, TA = +25 C unless otherwise noted)
Conditions Min Typ 1 10 1.0 20 150 0 120 115 125 120 Max 5 10 50 1.5 70 200 5 Units µV µV pA nA pA pA V dB dB dB dB µV/°C V V V V mV mV mV mV mA mA mA mA dB dB µA µA V/µs ms MHz µV p-p µV p-p nV/ H z fA/Hz
Symbol
40°C TA +125°C 40°C TA +125°C 40°C TA +125°C VCM = 0 V to +5 V 40°C TA +125°C RL = 10 k, VO = +0.3 V to +4.7 V 40°C TA +125°C 40°C TA +125°C RL = 100 k to GND 40°C to +125°C RL = 10 k to GND 40°C to +125°C RL = 100 k to V+ 40°C to +125°C RL = 10 k to V+ 40°C to +125°C 40°C to +125°C 40°C to +125°C VS = +2.7 V to +5.5 V 40°C TA +125°C VO = 0 V 40°C TA +125°C RL = 10 k 120 115
140 130 145 135 0.005 0.04 4.998 4.997 4.98 4.975 1 2 10 15 ± 50 ± 40 ± 30 ± 15
4.99 4.99 4.95 4.95
Output Voltage Low
V OL
Short Circuit Limit Output Current POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier DYNAMIC PERFORMANCE Slew Rate Overload Recovery Time Gain Bandwidth Product NOISE PERFORMANCE Voltage Noise Voltage Noise Density Current Noise Density
I SC IO
± 25
10 10 30 30
PSRR I SY
130 130 850 975 1,000 1,075 0.4 0.05 1.5 1.0 0.32 42 2
SR GBP en p-p en p-p en in
0.3
0 Hz to 10 Hz 0 Hz to 1 Hz f = 1 kHz f = 10 Hz
NOTE 1 Gain testing is highly dependent upon test bandwidth. Specifications subject to change without notice.
2
REV. 0
AD8551/AD8552/AD8554 ELECTRICAL CHARACTERISTICS (V
Parameter INPUT CHARACTERISTICS Offset Voltage Input Bias Current Input Offset Current Input Voltage Range Common-Mode Rejection Ratio Large Signal Voltage Gain1 Offset Voltage Drift OUTPUT CHARACTERISTICS Output Voltage High V OS IB I OS CMRR A VO VOS /T V OH
S
= +2.7 V, VCM = +1.35 V, VO = +1.35 V, TA = +25 C unless otherwise noted)
Conditions Min Typ 1 10 1.0 10 150 0 115 110 110 105 Max 5 10 50 1.5 50 200 2.7 Units µV µV pA nA pA pA V dB dB dB dB µV/°C V V V V mV mV mV mV mA mA mA mA dB dB µA µA V/µs ms MHz µV p-p nV/ H z fA/Hz
Symbol
40°C TA +125°C 40°C TA +125°C 40°C TA +125°C VCM = 0 V to +2.7 V 40°C TA +125°C RL = 10 k, VO = +0.3 V to +2.4 V 40°C TA +125°C 40°C TA +125°C RL = 100 k to GND 40°C to +125°C RL = 10 k to GND 40°C to +125°C RL = 100 k to V+ 40°C to +125°C RL = 10 k to V+ 40°C to +125°C 40°C to +125°C 40°C to +125°C VS = +2.7 V to +5.5 V 40°C TA +125°C VO = 0 V 40°C TA +125°C RL = 10 k 120 115
130 130 140 130 0.005 0.04 2.697 2.696 2.68 2.675 1 2 10 15 ± 15 ± 10 ± 10 ±5 130 130 750 950 0.5 0.05 1 1.6 75 2
2.685 2.685 2.67 2.67
Output Voltage Low
V OL
Short Circuit Limit Output Current POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier DYNAMIC PERFORMANCE Slew Rate Overload Recovery Time Gain Bandwidth Product NOISE PERFORMANCE Voltage Noise Voltage Noise Density Current Noise Density
I SC IO
± 10
10 10 20 20
PSRR I SY
900 1,000
SR GBP en p-p en in
0 Hz to 10 Hz f = 1 kHz f = 10 Hz
NOTE 1 Gain testing is highly dependent upon test bandwidth. Specifications subject to change without notice.
REV. 0
3
AD8551/AD8552/AD8554
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +6 V Input Voltage . . . . . . . . .2. . . . . . . . . . . . . GND to VS + 0.3 V Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ± 5.0 V ESD(Human Body Model) . . . . . . . . . . . . . . . . . . . . . 2,000 V Output Short-Circuit Duration to GND . . . . . . . . . Indefinite Storage Temperature Range RM, RU and R Packages . . . . . . . . . . . . . 65°C to +150°C Operating Temperature Range AD8551A/AD8552A/AD8554A . . . . . . . . 40°C to +125°C Junction Temperature Range RM, RU and R Packages . . . . . . . . . . . . . 65°C to +150°C Lead Temperature Range (Soldering, 60 sec) . . . . . . . +300°C
NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 Differential input voltage is limited to ±5.0 V or the supply voltage, whichever is less.
Package Type 8-Lead MSOP (RM) 8-Lead TSSOP (RU) 8-Lead SOIC (R) 14-Lead TSSOP (RU) 14-Lead SOIC (R)
JA1 190 240 158 180 120
JC 44 43 43 36 36
Units °C/W °C/W °C/W °C/W °C/W
NOTE 1 JA is specified for worst case conditions, i.e., JA is specified for device in socket for P-DIP packages, JA is specified for device soldered in circuit board for SOIC and TSSOP packages.
ORDERING GUIDE
Model AD8551ARM2 AD8551AR AD8552ARU3 AD8552AR AD8554ARU3 AD8554AR
Temperature Range 40°C to +125°C 40°C to +125°C 40°C to +125°C 40°C to +125°C 40°C to +125°C 40°C to +125°C
Package Description 8-Lead MSOP 8-Lead SOIC 8-Lead TSSOP 8-Lead SOIC 14-Lead TSSOP 14-Lead SOIC
Package Option RM-8 SO-8 RU-8 SO-8 RU-14 SO-14
Brand1 AHA
NOTES 1 Due to package size limitations, these characters represent the part number. 2 Available in reels only. 1,000 or 2,500 pieces per reel. 3 Available in reels only. 2,500 pieces per reel.
CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8551/AD8552/AD8554 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
4
REV. 0
Typical Performance Characteristics AD8551/AD8552/AD8554
180 160
NUMBER OF AMPLIFIERS
INPUT BIAS CURRENT pA
140 120 100 80 60 40 20 0 2.5 1.5 0.5 1.5 0.5 OFFSET VOLTAGE V 2.5
30 20 10
INPUT BIAS CURRENT pA
VSY = +2.7V VCM = +1.35V TA = +25 C
50 40 VSY = +5V TA = 40 C, +25 C, +85 C +85 C
1,500 1,000 500 0 500 1,000 1,500 2,000 VSY = +5V TA = +125 C
+25 C 0 10 20 30 0 40 C
1 2 3 4 INPUT COMMON-MODE VOLTAGE V
5
0
1 2 3 4 INPUT COMMON-MODE VOLTAGE V
5
Figure 1. Input Offset Voltage Distribution at +2.7 V
Figure 2. Input Bias Current vs. Common-Mode Voltage
Figure 3. Input Bias Current vs. Common-Mode Voltage
180 160
NUMBER OF AMPLIFIERS
120 100 80 60 40 20 0 2.5 1.5 0.5 0.5 1.5 OFFSET VOLTAGE V
8 6
OUTPUT VOLTAGE mV
140
NUMBER OF AMPLIFIERS
VSY = +5V VCM = +2.5V TA = +25 C
12 VSY = +5V VCM = +2.5V TA = 40 C TO +125 C
10k VSY = +5V TA = +25 C 1k
10
100 SOURCE 10 SINK
4 2 0
1
2.5
0
2 3 4 5 1 INPUT OFFSET DRIFT nV/ C
6
0.1 0.0001 0.001
1 0.01 0.1 LOAD CURRENT mA
10
100
Figure 4. Input Offset Voltage Distribution at +5 V
Figure 5. Input Offset Voltage Drift Distribution at +5 V
Figure 6. Output Voltage to Supply Rail vs. Output Current at +5 V
10k VSY = +2.7V TA = +25 C INPUT BIAS CURRENT pA OUTPUT VOLTAGE mV 1k
0 VCM = +2.5V VSY = +5V SUPPLY CURRENT mA 250
1.0 +5V 0.8 +2.7V 0.6
100 SOURCE 10 SINK
500
0.4
750
1
0.2
0.1 0.0001 0.001
1 0.01 0.1 LOAD CURRENT mA
10
100
1000
75
50
25
0 2 5 5 0 7 5 100 125 150 TEMPERATURE C
0
75
50
25
0 2 5 5 0 7 5 1 0 0 125 150 TEMPERATURE C
Figure 7. Output Voltage to Supply Rail vs. Output Current at +2.7 V
Figure 8. Bias Current vs. Temperature
Figure 9. Supply Current vs. Temperature
REV. 0
5
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