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Details, datasheet, quote on part number:AD9632AR
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Datasheet text preview:
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Ultralow Distortion, Wide Bandwidth Voltage Feedback Op Amps AD9631/AD9632
FUNCTIONAL BLOCK DIAGRAM 8-Pin Plastic Mini-DIP (N), Cerdip (Q), and SO (R) Packages
FEATURES Wide Bandwidth AD9631, G = +1 AD9632, G = +2 Small Signal 320 MHz 250 MHz Large Signal (4 V p-p) 175 MHz 180 MHz Ultralow Distortion (SFDR), Low Noise 113 dBc typ @ 1 MHz 95 dBc typ @ 5 MHz 72 dBc typ @ 20 MHz +46 dBm 3rd Order Intercept @ 25 MHz 7.0 nV/Hz Spectral Noise Density High Speed Slew Rate 1300 V/µs Settling 16 ns to 0.01%, 2 V Step ± 3 V to ±5 V Supply Operation 17 mA Supply Current APPLICATIONS ADC Input Driver Differential Amplifiers IF/RF Amplifiers Pulse Amplifiers Professional Video DAC Current to Voltage Baseband and Video Communications Pin Diode Receivers Active Filters/Integrators/Log Amps PRODUCT DESCRIPTION
HARMONIC DISTORTION dBc
NC INPUT +INPUT V S
1 2 3 4
8 7 6
NC +VS OUTPUT NC
AD9631/32
(Top View) NC = NO CONNECT
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These characteristics position the AD9631/AD9632 ideally for driving flash as well as high resolution ADCs. Additionally, the balanced high impedance inputs of the voltage feedback architecture allow maximum flexibility when designing active filters. The AD9631 is offered in industrial (40°C to +85°C) and military (55°C to +125°C) temperature ranges and the AD9632 in industrial. Industrial versions are available in plastic DIP and SOIC; MIL versions are packaged in cerdip.
30 VO = 2V pp VS = ±5V RL = 500 50
The AD9631 and AD9632 are very high speed and wide bandwidth amplifiers. They are an improved performance alternative to the AD9621 and AD9622. The AD9631 is unity gain stable. The AD9632 is stable at gains of two or greater. Utilizing a voltage feedback architecture, the AD9631/AD9632's exceptional settling time, bandwidth, and low distortion meet the requirements of many applications which previously depended on current feedback amplifiers. Its classical op amp structure works much more predictably in many designs. A proprietary design architecture has produced an amplifier that combines many of the best characteristics of both current feedback and voltage feedback amplifiers. The AD9631 and AD9632 exhibit exceptionally fast and accurate pulse response (16 ns to 0.01%) as well as extremely wide small signal and large signal bandwidth and ultralow distortion. The AD9631 achieves 72 dBc at 20 MHz and 320 MHz small signal and 175 MHz large signal bandwidths.
70 2ND HARMONIC 90
3RD HARMONIC 110
130 10k
100k
1M FREQUENCY Hz
10M
100M
Figure 1. AD9631 Harmonic Distortion vs. Frequency, G = +1
REV. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A. Tel: 617/329-4700 Fax: 617/326-8703
AD9631/AD9632SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (± V = ±5 V; R
S LOAD
= 100 ; AV = 1 (AD9631); AV = 2 (AD9632), unless otherwise noted)
AD9631A Min Typ Max AD9632A Min Typ Max Units
Parameter DYNAMIC PERFORMANCE Bandwidth (3 dB) Small Signal Large Signal1 Bandwidth for 0.1 dB Flatness Slew Rate, Average +/ Rise/Fall Time Settling Time To 0.1% To 0.01% HARMONIC/NOISE PERFORMANCE 2nd Harmonic Distortion 3rd Harmonic Distortion 3rd Order Intercept Noise Figure Input Voltage Noise Input Current Noise Average Equivalent Integrated Input Noise Voltage Differential Gain Error (3.58 MHz) Differential Phase Error (3.58 MHz) Phase Nonlinearity DC PERFORMANCE2, RL = 150 Input Offset Voltage3
Conditions
220 VOUT 0.4 V p-p VOUT = 4 V p-p 150 VOUT = 300 mV p-p 9631, RF = 140 ; 9632, RF = 425 1000 VOUT = 4 V Step VOUT = 0.5 V Step VOUT = 4 V Step VOUT = 2 V Step VOUT = 2 V Step 2 V p-p; 20 MHz, RL = 100 RL = 500 2 V p - p ; 2 0 M H z , RL = 1 0 0 RL = 500 25 MHz RS = 50 1 MHz to 200 MHz 1 MHz to 200 MHz 0.1 MHz to 200 MHz RL = 150 RL = 150 dc to 100 MHz
320 175 130 1300 1.2 2.5 11 16 64 72 76 81 +46 18 7.0 2.5 100 0.03 0.02 1.1 3 57 65 69 74
180 155
250 180
MHz MHz MHz V/µs ns ns ns ns 47 65 67 74 dBc dBc dBc dBc dBm dB nV H z pA H z µV rms % Degree Degree mV mV µV/°C µA µA µA µA dB dB dB k pF V V mA mA V mA mA dB
130 1200 1500 1.4 2.1 11 16 54 72 74 81 +41 14 4.3 2.0
0.06 0.04
60 0.02 0.04 0.02 0.04 1.1 2 5 8
T M I N TM A X Offset Voltage Drift Input Bias Current T M I N TM A X Input Offset Current Common-Mode Rejection Ratio Open-Loop Gain INPUT CHARACTERISTICS Input Resistance Input Capacitance Input Common-Mode Voltage Range OUTPUT CHARACTERISTICS Output Voltage Range, RL = 150 Output Current Output Resistance Short Circuit Current POWER SUPPLY Operating Range Quiescent Current Power Supply Rejection Ratio TMIN TMAX TM I N TM A X T M I N TM A X VCM = ± 2 . 5 V VO U T = ± 2 . 5 V T M I N TM A X 70 46 40
± 10 2 0.1 90 52
10 13 7 10 3 5 70 46 40
± 10 2 7 10 0.1 3 5 90 52
500 1.2 ± 3.4 ± 3.2 ± 3.9 70 0.3 240 ± 3.0 ± 5.0 ± 6.0 17 18 21 50 60
500 1.2 ± 3.4 ± 3.2 ± 3.9 70 0.3 240 ± 3.0 ± 5.0 ± 6.0 16 17 20 56 66
NOTES 1 See Max Ratings and Theory of Operation sections of data sheet. 2 Measured at AV = 50. 3 Measured with respect to the inverting input. Specifications subject to change without notice.
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REV. A
AD9631/AD9632
ABSOLUTE MAXIMUM RATINGS 1 MAXIMUM POWER DISSIPATION
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V Voltage Swing × Bandwidth Product . . . . . . . . . . 550 V × MHz Internal Power Dissipation2 Plastic Package (N) . . . . . . . . . . . . . . . . . . . . . . . . 1.3 Watts Small Outline Package (R) . . . . . . . . . . . . . . . . . . . 0.9 Watts Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ± VS Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ± 1.2 V Output Short Circuit Duration . . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves Storage Temperature Range N, R . . . . . . . . . 65°C to +125°C Operating Temperature Range (A Grade) . . . 40°C to +85°C Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300°C
NOTES Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 Specification is for device in free air: 8-Pin Plastic Package: JA = 90°C/Watt 8-Pin SOIC Package: JA = 140°C/Watt
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The maximum power that can be safely dissipated by these devices is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately +150°C. Exceeding this limit temporarily may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of +175°C for an extended period can result in device failure. While the AD9631 and AD9632 are internally short circuit protected, this may not be sufficient to guarantee that the maximum junction temperature (+150°C) is not exceeded under all conditions. To ensure proper operation, it is necessary to observe the maximum power derating curves.
2.0
MAXIMUM POWER DISSIPATION Watts
8-PIN MINI-DIP PACKAGE
TJ = +150°C
1.5
METALIZATION PHOTO
Dimensions shown in inches and (mm). Connect Substrate to V S.
IN 2 +VS 7
1.0
8-PIN SOIC PACKAGE 0.5
0.046 (1.17)
0 50 40 30 20 10 0 10 20 30 40 50 60 AMBIENT TEMPERATURE °C
6 OUT
70
80 90
Figure 2. Plot of Maximum Power Dissipation vs. Temperature
ORDERING GUIDE
3 +IN
4 VS 0.050 (1.27)
AD9631
IN 2
+VS 7
Model AD9631AN AD9631AR AD9631(SMD) AD9631-EB
Temperature Range
Package Package Description Option* N-8 R-8 Q-8
0.046 (1.17)
6 OUT
AD9632AN AD9632AR AD9632-EB
40C to +85°C Plastic DIP 40°C to +85°C SOIC 55°C to +125°C Cerdip Evaluation Board 40°C to +85°C Plastic DIP 40°C to +85°C SOIC Evaluation Board
N-8 R-8
*N = Plastic DIP; Q = Cerdip; R= SOIC (Small Outline Integrated Circuit).
3 +IN 4 VS 0.050 (1.27)
AD9632
CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although these devices feature proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. A
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AD9631/AD9632 AD9631Typical Characteristics
RF +V S 10µF 0.1µF PU LSE GENER ATOR TR/TF = 350ps VI N RT 49.9 V S 130 2 7 VI N PULSE GEN ERATOR TR/TF = 350ps 130 2 RT 49.9 100 +V S RF 10µF 0.1µF 7
AD9631
3 4
6 0.1 µ F 10µF
VOU T RL = 100
AD9631
3 4
6 0.1µF
VO U T RL = 100
10µF V S
Figure 3. Noninverting Configuration, G = +1
Figure 6. Inverting Configuration, G = 1
Figure 4. Large Signal Transient Response; VO = 4 V p-p, G = +1, RF = 250
Figure 7. Large Signal Transient Response; VO = 4 V p-p, G = 1, RF = RIN = 267
Figure 5. Small Signal Transient Response; VO = 400 mV p-p, G = +1, RF = 140
Figure 8. Small Signal Transient Response; VO = 400 mV p-p, G = 1, RF = RIN = 267
REV. A
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AD9631/AD9632 AD9632Typical Characteristics
RF PULSE GENERATOR TR/T F = 350ps RIN 2 130 RT 49.9 V S 7 +V S 10µF 0.1µF
RF +V S 10µF 0. 1µF 2 RT 49.9 100 7
PU L SE GEN ERATOR T R/TF = 350ps VI N 130
AD9632
3 4
6 0.1µF 10µF
VO UT RL = 100
AD9632
3 4
6 0.1 µ F 10 µF
VO U T RL = 100
VI N
V S
Figure 9. Noninverting Configuration, G = +2
Figure 12. Inverting Configuration, G= 1
Figure 10. Large Signal Transient Response; VO = 4 V p-p, G = +2, RF = RIN = 422
Figure 13. Large Signal Transient Response; VO = 4 V p-p, G = 1, RF = RIN = 422 , RT = 56.2
Figure 11. Small Signal Transient Response; VO = 400 mV p-p, G = +2, RF = RIN = 274
Figure 14. Small Signal Transient Response; VO = 400 mV p-p, G = 1, RF = RIN = 267 , RT = 61.9
REV. A
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