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Details, datasheet, quote on part number:OP183GP
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Datasheet text preview:
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FEATURES Single-Supply +3 Volts to +36 Volts Wide Bandwidth 5 MHz Low Offset Voltage <1 mV High Slew Rate 10 V/ s Low Noise 10 nV/Hz Unity-Gain Stable Input and Output Range Includes GND No Phase Reversal APPLICATIONS Multimedia Telecom ADC Buffers Wide Band Filters Microphone Preamplifiers
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5 MHz Single-Supply Operational Amplifiers OP183/OP283
PIN CONNECTIONS 8-Lead Narrow-Body SO (S Suffix)
8
8-Lead Epoxy DIP (P Suffix)
NULL IN +IN V 1 2 3 4 8 7 6 5 NC V+ OUT NULL
OP183
OP183
TOP VIEW (Not to Scale)
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NC = NO CONNECT
8-Lead Narrow-Body SO (S Suffix)
1 8
8-Lead Epoxy DIP (P Suffix)
OUTA INA +INA V 1 2 3 4 8 7 6 V+ OUTB INB +INB
GENERAL DESCRIPTION The OP183 is a single-supply, 5 MHz bandwidth amplifier with slew rates of 10 V/µs. The OP283 is a dual version. Both can operate from voltages as low as 3 volts and up to 36 volts. This combination of slew rate and bandwidth yields excellent singlesupply ac performance making them ideally suited for telecom and multimedia audio applications. In addition to its ac characteristics, the OP183 family provides good dc performance with guaranteed 1 mV offset. Noise is a respectable 10 nV/Hz. Supply current is only 1.2 mA per amplifier. These amplifiers are well suited for single-supply applications that require moderate bandwidths even when used in high gain configurations. This makes them useful in filters and instrumentation. Their output drive capability and very wide full power bandwidth make them a good choice for multimedia headphone drivers or microphone input amplifiers. The OP183 and OP283 are available in 8-pin plastic DIP and SO-8 surface mount packages. They are specified over the extended industrial (40°C to +85°C) temperature range.
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OP283
TOP VIEW (Not to Scale)
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OP283
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Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A. Tel: 617/329-4700 Fax: 617/326-8703
OP183/OP283SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ V = +5.0 V, T = +25 C unless otherwise noted)
S A
Parameter INPUT CHARACTERISTICS Offset Voltage Input Bias Current Input Offset Current Input Voltage Range Common-Mode Rejection Ratio Large Signal Voltage Gain Offset Voltage Drift Bias Current Drift OUTPUT CHARACTERISTICS Output Voltage High Output Voltage Low Short Circuit Limit POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier Supply Voltage Range DYNAMIC PERFORMANCE Slew Rate Full-Power Bandwidth Settling Time Gain Bandwidth Product Phase Margin NOISE PERFORMANCE Voltage Noise Voltage Noise Density Current Noise Density
Symbol V OS IB I OS CMRR AV O VO S / T I B/ T V OH V OL I SC
Conditions VCM = 2.5 V, VOUT = 2.5 V, 40°C TA +85°C VCM = 2.5 V, VOUT = 2.5 V, 40°C TA +85°C VCM = 2.5 V, VOUT = 2.5 V, 40°C TA +85°C
Min
Typ 0.025 350 430 11
Max 1.0 1.25 600 750 ± 50 +3.5
Units mV mV nA nA nA nA V dB V/mV µV/°C n A / °C V mV mA mA
0 VCM = 0 to 3.5 V 40°C TA +85°C RL = 2 k, 0.2 VO 3.8 V 70 100 104 4 1.6 RL = 2 k to GND RL = 2 k to GND Source Sink VS = +4 V to +6 V, 40°C TA +85°C VO = 2.5 V, 40°C TA +85°C +4.0 4.22 50 25 30
75
PSRR ISY VS SR BWp tS GBP m en p-p en in
70 +3
104 1.2 1.5 ± 18
dB mA V V/µs kHz µs MHz Degrees µV p-p nV/Hz pA/Hz
RL = 2 k 1% Distortion To 0.01%
5
10 >50 1.5 5 46 2 10 0.4
0.1 Hz to 10 Hz f = 1 kHz, VCM = 2.5 V
ELECTRICAL CHARACTERISTICS (@ V = +3.0 V, T = +25 C unless otherwise noted)
S A
Parameter INPUT CHARACTERISTICS Offset Voltage Input Bias Current Input Offset Current Input Voltage Range Common-Mode Rejection Ratio Large Signal Voltage Gain OUTPUT CHARACTERISTICS Output Voltage High Output Voltage Low Short Circuit Limit POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier DYNAMIC PERFORMANCE Gain Bandwidth Product NOISE PERFORMANCE Voltage Noise Density
Symbol V OS IB I OS CMRR AV O V OH V OL I SC
Conditions VCM = 1.5 V, VOUT = 1.5 V, 40°C TA +85°C VCM = 1.5 V, VOUT = 1.5 V, 40°C TA +85°C VCM = 1.5 V, VOUT = 1.5 V, 40°C TA +85°C
Min
Typ 0.3 350 11
Max 1.0 1.25 600 750 ± 50 +1.5
Units mV mV nA nA nA nA V dB V/mV V mV mA mA
0 VCM = 0 V to 1.5 V, 40°C TA +85°C RL = 2 k, 0.2 VO 1.8 V RL = 2 k to GND RL = 2 k to GND Source Sink VS = +2.5 V to +3.5 V, 40°C TA +85°C 40°C TA +85°C, VO = 1.5 V 70 100 +2.0 103 260 2.25 90 25 30
125
PSRR ISY GBP en
60
113 1.2 5
1.5
dB mA MHz nV/Hz
f = 1 kHz, VCM = 1.5 V
10
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OP183/OP283 ELECTRICAL CHARACTERISTICS (@ V =
S
15.0 V, TA = +25 C unless otherwise noted)
Min Typ 0.01 Max 1.0 1.25 600 750 ± 50 +13.5 Units mV mV nA nA nA V dB V/mV µV/°C nA/° C mV V V mA mA
Parameter INPUT CHARACTERISTICS Offset Voltage Input Bias Current Input Offset Current Input Voltage Range Common-Mode Rejection Ratio Large Signal Voltage Gain Offset Voltage Drift Bias Current Drift Long Term Offset Voltage OUTPUT CHARACTERISTICS Output Voltage High Output Voltage Low Short-Circuit Limit Open -Loop Output Impedance POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier Supply Voltage Range DYNAMIC PERFORMANCE Slew Rate Full-Power Bandwidth Settling Time Gain Bandwidth Product Phase Margin NOISE PERFORMANCE Voltage Noise Voltage Noise Density Current Noise Density
Symbol V OS IB I OS CMRR AV O VOS/T I B/ T V OS V OH V OL I SC Z OUT PSRR I SY VS SR BW p tS GBP m en p-p en in
Conditions
40°C TA +85°C 40°C TA +85°C 40 TA +85°C 15 VCM = 15 V to +13.5 V, 40°C TA +85°C RL = 2 k 70 100 86 1000 3 1.6 300 400 11
Note 1 RL = 2 k to GND, 40°C TA +85°C RL = 2 k to GND, 40°C TA +85°C Source Sink f = 1 MHz, AV = +1 VS = ± 2.5 V to ± 18 V, 40°C TA +85°C VS = ± 18 V, VO = 0 V, 40°C TA +85°C +13.9 14.1 14.05 30 50 15
1.5
13.9
70
112 1.2 1.75 ± 18
dB mA V V/µs kHz µs MHz degrees µV p-p n V / H z p A / H z
+3 RL = 2 k 1% Distortion To 0.01% 10 15 50 1.5 5 56 2 10 0.4
0.1 Hz to 10 Hz f = 1 kHz
NOTES 1 Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C, with an LTPD of 1.3. Specifications subject to change without notice.
WAFER TEST LIMITS
Parameter Offset Voltage Input Bias Current Input Offset Current Common-Mode Rejection Power Supply Rejection Ratio Large Signal Voltage Gain Output Voltage High Output Voltage Low Supply Current/Amplifier
(@ VS = +5.0 V, TA = +25 C unless otherwise noted)
Symbol V OS IB I OS CMRR PSRR AV O V OH V OL I SY Conditions VS = ± 15 V, VO = 0 V VCM = 2.5 V VCM = 2.5 V VCM = 0 V to 3.5 V V = ± 2.5 V to ± 18 V RL = 2 k, 0.2 VO 3.8 V RL = 2 k RL = 2 k VS = ± 15 V, VO = 0 V, RL = Limit 1.0 ± 600 ± 50 70 70 100 4.0 75 1.5 Units mV max nA max nA max dB min dB min V/mV min V min mV max mA max
NOTE Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
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