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Part: OP275GBC
Category:
Analog & Mixed-Signal Processing
-> Amplifiers
-> Audio/Power Amplifiers
Description: Dual Bipolar/JFET, Audio Operational Amplifier
Company: Analog Devices
Datasheet: Download OP275GBC datasheet File size : 421 kB
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Datasheet text preview:
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FEATURES Excellent Sonic Characteristics Low Noise: 6 nV/Hz Low Distortion: 0.0006% High Slew Rate: 22 V/ s Wide Bandwidth: 9 MHz Low Supply Current: 5 mA Low Offset Voltage: 1 mV Low Offset Current: 2 nA Unity Gain Stable SOIC-8 Package APPLICATIONS High Performance Audio Active Filters Fast Amplifiers Integrators GENERAL DESCRIPTION
OUT A 1 IN A 2 +IN A 3 V 4
Dual Bipolar/JFET, Audio Operational Amplifier OP275*
PIN CONNECTIONS 8-Lead Narrow-Body SO (S Suffix)
8
8-Lead Epoxy DIP (P Suffix)
V+ OUT B IN B +IN B
OUT A IN A +IN A V
1 2 3 4
OP275
8 7 6 5
V+ OUT B IN B +IN B
OP275
7 6 5
The OP275 is the first amplifier to feature the Butler Amplifier front-end. This new front-end design combines both bipolar and JFET transistors to attain amplifiers with the accuracy and low noise performance of bipolar transistors, and the speed and sound quality of JFETs. Total Harmonic Distortion plus Noise equals that of previous audio amplifiers, but at much lower supply currents. A very low l/f corner of below 6 Hz maintains a flat noise density response. Whether noise is measured at either 30 Hz or 1 kHz, it is only 6 nV/Hz. The JFET portion of the input stage gives the OP275 its high slew rates to keep distortion low, even when large output swings are required, and the 22 V/µs slew rate of the OP275 is the fastest of any standard audio amplifier. Best of all, this low noise and high speed are accomplished using less than 5 mA of supply current, lower than any standard audio amplifier.
Improved dc performance is also provided with bias and offset currents greatly reduced over purely bipolar designs. Input offset voltage is guaranteed at 1 mV and is typically less than 200 µV. This allows the OP275 to be used in many dc coupled or summing applications without the need for special selections or the added noise of additional offset adjustment circuitry. The output is capable of driving 600 loads to 10 V rms while maintaining low distortion. THD + Noise at 3 V rms is a low 0.0006%. The OP275 is specified over the extended industrial (40°C to +85°C) temperature range. OP275s are available in both plastic DIP and SOIC-8 packages. SOIC-8 packages are available in 2500 piece reels. Many audio amplifiers are not offered in SOIC-8 surface mount packages for a variety of reasons; however, the OP275 was designed so that it would offer full performance in surface mount packaging.
*Protected by U.S. Patent No. 5,101,126.
REV. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. © Analog Devices, Inc., 1995 One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A. Tel: 617/329-4700 Fax: 617/326-8703
OP275SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ V =
S
15.0 V, TA = +25 C unless otherwise noted)
Conditions VIN = 3 V rms, RL = 2 k, f = 1 kHz f = 30 Hz f = 1 kHz f = 1 kHz THD + Noise 0.01%, RL = 2 k, VS = ± 18 V Min Typ Max Units
Parameter AUDIO PERFORMANCE THD + Noise Voltage Noise Density Current Noise Density Headroom INPUT CHARACTERISTICS Offset Voltage Input Bias Current Input Offset Current Input Voltage Range Common-Mode Rejection Ratio Large Signal Voltage Gain
Symbol
en in
0.006 7 6 1.5 >12.9 1 1.25 350 400 50 100 +10.5
% nV/ Hz nV/ Hz pA/Hz dBu mV mV nA nA nA nA V dB V/mV V/mV V/mV µV/°C V V V dB dB
V OS IB IOS V CM CMRR AVO VOS/T VO
40°C TA +85°C V CM = 0 V VCM = 0 V, 40°C TA +85°C V CM = 0 V VCM = 0 V, 40°C TA +85°C VCM = ± 10.5 V, 40°C TA +85°C RL = 2 k RL = 2 k, 40°C TA +85°C RL = 600 10.5 80 250 175
100 100 2 2
106
Offset Voltage Drift OUTPUT CHARACTERISTICS Output Voltage Swing
200 2 13.5 13 ± 13.9 +13.5 ± 13.9 +13 +14, 16 111
RL = 2 k RL = 2 k, 40°C TA +85°C RL = 600 , VS = ± 18 V VS = ± 4.5 V to ± 18 V VS = ± 4.5 V to ± 18 V, 40°C TA +85°C VS = ± 4.5 V to ± 18 V, VO = 0 V, RL = , 40°C TA +85°C VS = ± 22 V, VO = 0 V, RL = , 40°C TA +85°C
POWER SUPPLY Power Supply Rejection Ratio
PSRR
85 80
Supply Current
IS Y
4 ± 4.5 15 22 9 62
5 5.5 ± 22
mA mA V V/µs kHz MHz Degrees %
Supply Voltage Range DYNAMIC PERFORMANCE Slew Rate Full-Power Bandwidth Gain Bandwidth Product Phase Margin Overshoot Factor
Specifications subject to change without notice.
VS SR BWP GBP øm RL = 2 k
VIN = 100 mV, AV = +1, RL = 600 , CL = 100 pF
10
2
REV. A
OP275 WAFER TEST LIMITS (@ V =
S
15.0 V, TA = +25 C unless otherwise noted)
Symbol V OS IB IOS V CM CMRR PSRR AVO VO IS Y Conditions V CM = 0 V V CM = 0 V V CM = ± 1 0 . 5 V V = ± 4.5 V to ± 18 V RL = 2 k RL = 10 k VO = 0 V, RL = Limit 1 350 50 ± 10.5 80 85 250 ± 13.5 5 Units mV max nA max nA max V min dB min dB min V/mV min V min mA max
Parameter Offset Voltage Input Bias Current Input Offset Current Input Voltage Range1 Common-Mode Rejection Ratio Power Supply Rejection Ratio Large Signal Voltage Gain Output Voltage Range Supply Current
NOTES Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing. 1 Guaranteed by CMRR test. Specifications subject to change without notice.
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 22 V Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 22 V Differential Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . . ± 7.5 V Output Short-Circuit Duration to GND3 . . . . . . . . . Indefinite Storage Temperature Range P, S Package . . . . . . . . . . . . . . . . . . . . . . . . 65°C to +150°C Operating Temperature Range OP275G . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C to +85°C Junction Temperature Range P, S Package . . . . . . . . . . . . . . . . . . . . . . . . 65°C to +150°C Lead Temperature Range (Soldering, 60 sec) . . . . . . . +300°C Package Type 8-Pin Plastic DIP (P) 8-Pin SOIC (S) JA4 103 158 JC 43 43 Units °C/W °C/W
ABSOLUTE MAXIMUM RATINGS 1
ORDERING GUIDE
Model OP275GP OP275GS OP275GSR OP275GBC
Temperature Range 40°C to +85°C 40°C to +85°C 40°C to +85°C + 2 5° C
Package Option 8-Pin Plastic DIP 8-Pin SOIC SO-8 Reel, 2500 pcs. DICE
DICE CHARACTERISTICS
NOTES 1 Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted. 2 For supply voltages greater than ± 22 V, the absolute maximum input voltage is equal to the supply voltage. 3 Shorts to either supply may destroy the device. See data sheet for full details. 4 JA is specified for the worst case conditions, i.e., JA is specified for device in socket for cerdip, P-DIP, and LCC packages; JA is specified for device soldered in circuit board for SOIC package.
Die Size 0.070 × 0.108 in. (7,560 sq. mils) Substrate is connected to V
CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP275 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. A
3
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