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Part: EB04

Category:

Description: Motion Control

Company: Apex Microtechnology Corporation

Datasheet: Download EB04 datasheet     File size : 196 kB

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Datasheet text preview:
TRIPLE INDEPENDENT LOGIC INTERFACED HALF BRIDGES

EBO4
MICROTECHNOLOGY

HTTP://WWW.APEXMICROTECH.COM

(800) 546-APEX

(800) 546-2739

FEATURES
· · · · · COMPATIBLE WITH PWM FREQUENCIES UP TO 50KHZ 10.8V TO 50V MOTOR SUPPLY 5A CONTINUOUS OUTPUT CURRENT HCMOS COMPATIBLE SCHMITT TRIGGER LOGIC INPUTS SEPARATE SOURCE OUTPUTS FOR NEGATIVE RAIL CURRENT SENSE · SLEEP MODE · SINGLE SUPPLY FOR GATE DRIVE AND LOGIC · BUILT-IN DELAY ELIMINATES SHOOT THROUGH DUE TO FETS CROSSFIRING

APPLICATIONS
HIGH POWER CIRCUITS FOR DIGITAL CONTROL OF: · THREE AXIS MOTION USING BRUSH TYPE MOTORS · THREE PHASE BRUSHLESS DC MOTOR DRIVE · THREE PHASE AC MOTOR DRIVE · THREE PHASE HIGH POWER MICROSTEPPING STEP MOTORS

BLOCK DIAGRAM
VDD 4 13 HV1 14 OUT1 15 S1 16 HVRTN1 Hin 2 8 Lin 2 6 Hin 3 3 Lin 3 2 SD 11 FET Half Bridge Output Logic Interface Level Translation FET Half Bridge Output 17 HV2 18 OUT2 19 S2 20 HVRTN2 21 HV3 22 OUT3 23 S3 24 HVRTN3 Vss 7

Hin 1 12 Lin 1 10

DESCRIPTION
The EB04 consists of three independent FET half bridges with drivers. The drivers may be interfaced with CMOS or HCMOS level logic.

FET Half Bridge Output

APEX MICROTECHNOLOGY CORPORATION · TELEPHONE (520) 690-8600 · FAX (520) 888-3329 · ORDERS (520) 690-8601 · EMAIL prodlit@apexmicrotech.com

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EB04
ABSOLUTE MAXIMUM RATINGS
MOTOR VOLTAGE SUPPLY, HV OUTPUT CURRENT, peak OUTPUT CURRENT, continuous1 LOGIC SUPPLY VOLTAGE, Vdd POWER DISSIPATION, internal1 LOGIC INPUT VOLTAGE THERMAL RESISTANCE TO CASE3 TEMPERATURE, pin solder, 10s TEMPERATURE, junction2 TEMPERATURE RANGE, storage OPERATING TEMPERATURE, case GROUND DIFFERENTIAL | Vss­HVRTN | TEST CONDITIONS 6 IOUT=5A; Vdd=5V HV=50V, Fpwm=50kHz, L=100 µH " MIN 48.2 -1.64 TYP

ABSOLUTE MAXIMUM RATINGS SPECIFICATIONS

SPECIFICATIONS
PARAMETER POSITIVE OUTPUT VOLTAGE NEGATIVE OUTPUT VOLTAGE POSITIVE EDGE DELAY (upper FET) NEGATIVE EDGE DELAY (upper FET) POSITIVE EDGE DELAY (upper FET) NEGATIVE EDGE DELAY (lower FET) RISE TIME (upper FET turn-on) FALL TIME (upper FET turn-off) RISE TIME (lower FET turn-off) FALL TIME (lower FET turn-on) REVERSE RECOVERY TIME (upper FET body diode) REVERSE RECOVERY TIME (lower FET body diode) RDS (on) Upper FET RDS (on) Upper FET RDS (on) Lower FET RDS (on) Lower FET PWM FREQUENCY INPUT IMPEDANCE

50V 10A 5A -0.5V TO 7V 40W -0.3V to Vdd + 0.3V 5°C/Watt 300°C 150°C ­55 to +150°C ­25 to +85°C 1V MAX 51.64 1.1 170 1'10 320 46 810 86 29 794 47 86 0.16 0.23 0.082 0.156 0.25 0.31 0.126 0.162 50 50 UNITS Volts Volts nS nS nS nS nS nS nS nS nS nS ohms ohms ohms ohms kHz k-ohm

LOAD =4mH in series with 10 ohms LOAD =4mH in series with 10 ohms LOAD =4mH in series with 10 ohms LOAD =4mH in series with 10 ohms LOAD =4mH in series with 10 ohms LOAD =4mH in series with 10 ohms 25°C Base Temp 85°C Base Temp 25°C Base Temp 85°C Base Temp Set by external circuitry Set by internal resistors

INPUT AND OUTPUT SIGNALS
PIN 1 2 3 4 5 6 7 8 9 10 11 12 SYMBOL N.C. Lin3 Hin3 Vdd N.C. Lin2 Vss Hin2 N.C. Lin1 SD Hin1 FUNCTION Gate supply 3 Low drive logic in 3 High drive logic in 3 Logic supply Gate supply 2 Low drive logic in 2 Signal ground High drive logic in 2 Gate supply 1 Low drive logic in 1 Shut down logic in High drive logic in 1 PIN 13 14 15 16 17 18 19 20 21 22 23 24 SYMBOL HV1 OUT1 S1 HVRTN1 HV2 OUT 2 S2 HVRTN2 HV3 OUT 3 S3 HVRTN 3 FUNCTION High Voltage supply 1 Section 1 output Section 1 source Section 1 return High voltage supply 2 Section 2 output Section 2 source Section 2 return High voltage supply 3 Section 3 output Section 3 source Section 3 return

NOTES: 1. 2. 3. 4. 5. 6.

Over Entire Environmental Range. Long term operation at the maximum junction temperature will result in reduced product life. Lower internal temperature by reducing internal dissipation or using better heatsinking to achieve high MTTF. Each FET. Assumes turning off inductive load. Logic input to output when driving non-inductive load. Unless otherwise noted: TC=25°C; Iout = 5A; Vdd = 5V; HV=50V; FPWM =50kHz; LLoad = 100µH

APEX MICROTECHNOLOGY CORPORATION · 5980 NORTH SHANNON ROAD · TUCSON, ARIZONA 85741 · USA · APPLICATIONS HOTLINE: 1 (800) 546-2739

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PACKAGE SPECIFICATIONS

EB04
OUTPUT
Each output section consists of a switching mode FET half bridge. Separate HV supply, source, and HV return lines are provided for each section. The FETs are conservatively rated to carry 5A. At 5A the saturation voltage is 1.9V maximum. Each FET has an intrinsic diode connected in anti-parallel. When switching an inductive load this diode will conduct, and the drop at 5A will be 1.9V maximum.

INPUT
A logic level input independently controls each FET in the half bridge. A logic level high turns on the FET and low turns it off. A common shut down input turns off all FETs when high. All inputs are Schmitt triggers with the upper threshold at 2/3 Vdd and the lower threshold at 1/3 Vdd. This comfortably interfaces with CMOS or HCMOS provided that the Vdd for the logic family and the EB04 are the same. TTL families may be used if a pull-up to Vcc is added to the TTL gates driving the EB04, and Vdd for the EB04 is the same supply as Vcc for the TTL family. An open signal connector pulls the shut down input high and all other inputs low, insuring that all outputs are off. However, input impedance is 50k on all inputs; therefore if one input is open circuited a high radiated noise level could spuriously turn on a FET.

DIP9 PACKAGE

WEIGHT: 69 g or 2.4 oz DIMENSIONS ARE IN INCHES ALTERNATE UNITS ARE [MM]

APEX MICROTECHNOLOGY CORPORATION · TELEPHONE (520) 690-8600 · FAX (520) 888-3329 · ORDERS (520) 690-8601 · EMAIL prodlit@apexmicrotech.com

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OPERATING CONSIDERATIONS

EB04
SHOOT THROUGH PROTECTION
MAX CURRENT 5A, continuous, 10A peak 5A, continuous, 10A peak 5A, continuous, 10A peak 105 mA

POWER SUPPLY REQUIREMENTS
SUPPLY HV1 HV2 HV3 Vdd VOLTAGE 10.8V to 50V 10.8V to 50V 10.8V to 50V 4.75 ­ 5.25

Power FETs have a relatively short turn on delay, and a longer turn off delay. Therefore, turn on delay has been built in, and turn on signals may be applied simultaneoulsy with the turn off input to the other FET in that half bridge.

PROTECTION CIRCUITS
The EB04 does not include protection circuits. However, there is a shut down input which will turn off all FETs when at logic "1". This input may be used with user designed temperature sensing and current sensing circuits to shut down the FETs in the event of a detected unsafe condition. This is recommended since the FETs may be turned off this way even if the normal input logic or DSP programming is faulty.

HV1, HV2, and HV3 may be used independently, or may be one supply. The Vdd supply must be compatible with the input logic. If a high voltage logic such as CMOS is used it may be tied with the Vcc supplies. HCMOS requires a 5V±10% supply

SPECIAL CONSIDERATIONS GENERAL
The EB04 is designed to give the user maximum flexibility in a digital or DSP based motion control system. Thermal, overvoltage, overcurrent, and crossfire protection circuits are part of the user's design. Users should read Application Note 1, "General Operating Considerations;" and Application Note 30, "PWM Basics" for much useful information in applying this part. These Application Notes are in the "Power Integrated Circuits Data Book" and on line at www.apexmicrotech.com.

HEATSINK
T h e heatsink for the EB04 should be sized for the application. When driving a 3-phase motor at 50V, 5 amps with a 50 kHz PWM frequency, the EB04 should be provided with sufficient heatsink to dissipate 25 Watts. Determining the power dissipated internally involves a complex set of calculations dependent on load, switching frequency and duty cycle. Worse case switching losses occur when driving an inductive load at maximum current and maintaining a duty cycle large enough to keep the load current moving in one direction only. Switching Losses in this case: 1. Mostly occurs during the "ON" transition of the upper FET of the "sourcing" half-bridge and the "ON" transition of the lower FET of the "sinking" half-bridge, and is proportional to frequency. 2. The switching time for the other two transistors is a function of the "Reverse Recovery Time" of the respective body diodes and is relatively short. Conductive Losses are a function of: 1. The "ON" Duty Cycle and I2RDS(on) losses of the upper "sourcing" FET and the I2RDS(on) losses of the lower "sinking" FET. 2. The "OFF" Duty Cycle and IE (Iavg x VSD) losses of the body diodes of the other two FETs in the half-bridges.

GROUNDING AND BYPASSING
As in any high power PWM system, grounding and bypassing are one of the keys to success. The EB04 is capable of generating 250W pulses with 30 n-second rise and fall times. If improperly grounded or bypassed this can cause horrible conducted and radiated EMI. In order to reduce conducted EMI, the EB04 provides a separate power ground, named HVRTN, for each high voltage supply. These grounds are not directly coupled. This isolation helps minimize high current ground loops. Apex recommends back to back high current diodes between logic and power grounds; this will maintain isolation but keep offset at a safe level. All grounds should tie together at one common point in the system. In order to reduce radiated EMI, Apex recommends a 50 µF or larger capacitor between HV and HVRTN. This capacitor should be a switching power grade electrolytic capacitor with ESR rated at 20 kHz. This capacitor should be placed physically as close to the EB04 as possible. However, such a capacitor will typically have a few hundred milli-ohms or so ESR. Therefore, each section must also be bypassed with a low ESR 1µF or larger ceramic capacitor. In order to minimize radiated noise it is necessary to minimize the area of the loop containing high frequency current. (The size of the antenna.) Therefore the 1µF ceramic capacitors should bypass each HV to its return right at the pins the EB04.

APPLICATION REFERENCES:
For additional technical information please refer to the following Application Notes: AN 01: General Operating Considerations AN 40: Using the Easy Bridge as a Brushless DC Motor Driver

This data sheet has been carefully checked and is believed to be reliable, however, no responsibility · assumed for ARIZONA 85741 or omissions. All specificiations are subject to 1 (800) 546-2739 APEX MICROTECHNOLOGY CORPORATION · 5980 NORTH SHANNON ROAD is TUCSON, possible inaccuracies · USA · APPLICATIONS HOTLINE: change without notice. EBO4U REV. A OCTOBER 2001 © 2001 Apex Microtechnology Corporation

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