Details, datasheet, quote on part number: AT49BV4096A-12RC
PartAT49BV4096A-12RC
CategoryMemory => Flash => Parallel Flash => 4M
Title4M
Description4-megabit (512k X 8/ 256k X 16) Single 2.7-volt Battery-voltage (tm) Flash Memory
CompanyATMEL Corporation
DatasheetDownload AT49BV4096A-12RC datasheet
Quote
Find where to buy
 
  

 

Features, Applications
Features

Single-voltage Read/Write Operation: to 3.6V (BV), to 3.6V (LV) Fast Read Access Time 70 ns Internal Erase/Program Control Sector Architecture One 8K Word (16K Bytes) Boot Block with Programming Lockout Two 4K Word (8K Bytes) Parameter Blocks One 240K Word (480K Bytes) Main Memory Array Block Fast Sector Erase Time 10 Seconds Byte-by-byte or Word-by-word Programming 30 s Typical Hardware Data Protection Data Polling for End of Program Detection Low Power Dissipation 25 mA Active Current 50 A CMOS Standby Current Typical 10,000 Write Cycles

Description

The 3-volt, 4-megabit Flash memory organized as 524,288 words of 8 bits each or 256K words of 16 bits each. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offers access times 70 ns with power dissipation of just at 2.7V read. When deselected, the CMOS standby current is less than 50 A. The device contains a user-enabled "boot block" protection feature. The AT49BV/LV4096A locates the boot block at lowest order addresses ("bottom boot"). To allow for simple in-system reprogrammability, the AT49BV/LV4096A does not require high input voltages for programming. Reading data out of the device is similar to reading from an EPROM; it has standard CE, OE and WE inputs to avoid bus contention. Reprogramming the AT49BV/LV4096A is performed by first erasing a block of data and then programming on a byte-by-byte or word-by-word basis.

Pin Name OE WE RESET VPP I/O15 I/O15(A-1) BYTE NC Function Addresses Chip Enable Output Enable Write Enable Reset VPP can be left unconnected or connected to VCC, GND, or 12V. The input has no effect on the operation of the device. Data Inputs/Outputs I/O15 (Data Input/Output, Word Mode) A-1 (LSB Address Input, Byte Mode) Selects Byte or Word Mode No Connect


The device is erased by executing the Erase command sequence; the device internally controls the erase operation. The memory is divided into four blocks for erase operations. There are two 4K word parameter block sections, the boot block, and the main memory array block. The typical number of program and erase cycles is in excess of 10,000 cycles. The 8K word boot block section includes a reprogramming lock out feature to provide data integrity. This feature is enabled by a command sequence. Once the boot block programming lockout feature is enabled, the data in the boot block cannot be changed when input levels of 5.5 volts or less are used. The boot sector is designed to contain user secure code. The BYTE pin controls whether the device data I/O pins operate in the byte or word configuration. If the BYTE pin is set at a logic "1" or left open, the device is in word configuration, - I/O15 are active and controlled by CE and OE. If the BYTE pin is set at logic "0", the device is in byte configuration, and only data I/O pins - I/O7 are active and controlled by CE and OE. The data I/O pins - I/O14 are tri-stated and the I/O15 pin is used as an input for the LSB (A-1) address function.

INPUT/OUTPUT BUFFERS PROGRAM DATA LATCHES Y-GATING MAIN MEMORY (240K WORDS) PARAMETER BLOCK 2 4K WORDS PARAMETER BLOCK 1 4K WORDS BOOT BLOCK 8K WORDS

READ: The AT49BV/LV4096A is accessed like an EPROM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in the high-impedance state whenever OE is high. This dual-line control gives designers flexibility in preventing bus contention. COMMAND SEQUENCES: When the device is first powered on, it will be reset to the read or standby mode, depending upon the state of the control line inputs. In order to perform other device functions, a series of command sequences are entered into the device. The command sequences are shown in the Command Definitions table (I/O8 I/O15 are don't care inputs for the command codes). The command sequences are written by applying a low pulse on the or CE input with or WE low (respectively) and OE high. The address is latched on the falling edge CE or WE, whichever occurs last. The data is latched by the first rising edge CE or WE. Standard microprocessor write


 

Related products with the same datasheet
AT49BV4096A-12
AT49BV4096A-12RI
AT49BV4096A-12TC
AT49BV4096A-12TI
AT49BV4096A-15
AT49BV4096A-70
AT49BV4096A-90
AT49BV4096A-90C1C
AT49BV4096A-90C5C
AT49BV4096A-90RC
AT49BV4096A-90TC
Some Part number from the same manufacture ATMEL Corporation
AT49BV4096A-12RI 4-megabit (512k X 8/ 256k X 16) Single 2.7-volt Battery-voltage (tm) Flash Memory
AT49BV512 512k (64kx8) Single 2.7v Battery-voltage (tm) Flash Memory
AT49BV641
AT49BV8011 8M Bit, 2.7-Volt Read And 2.7-Volt Byte-write Sectored Flash, Bottom Boot
AT49BV8192 8-megabit 512k X 16 CMOS Flash Memory
AT49BV8192A 8M Bit, 2.7-Volt Read And 2.7-Volt Byte-Write, Bottom Boot

AT24C512-10C-2.7 : 2-wire Serial EePROM 512K(65,536 X 8)

AT49BV002AN-70VC : 256K X 8 (2M Bit), 2.7-Volt Read And 2.7-Volt Write, Bottom Boot Parametric Block Flash

AT49LV001NT-90TC : 128K X 8 (1M Bit), 3.0-Volt Read And 3.0-Volt Write, Bottom Boot Parametric Block Flash

ATV2500BQL-30KM/883 : UV SPLD High-speed, High-density Uv-erasable Programmable Logic Device

TS80C51RD2-MIA : High Performance 8-bit Microcontroller

T89C51RC2-3CTIM : 0 to 40 MHz Flash Programmable 8-bit Microcontroller

AT28HC256-70TI : 256 (32kx8) High-speed Parallel EePROM

AT25080AN-10SI-2.7 SL383 : 8/16/32/64K, Spi Bus Serial EePROM, High Speed, Supports Spi Mode 0 And 3. Recommended For Designs.

ATTINY261-15MZ : Embedded - Microcontroller Integrated Circuit (ics) Internal Tape & Reel (TR) 2.7 V ~ 5.5 V; MCU AVR 2K FLASH 15MHZ 32-QFN Specifications: Program Memory Size: 2KB (1K x 16) ; RAM Size: 128 x 8 ; Number of I /O: 16 ; Package / Case: 32-VFQFN Exposed Pad ; Speed: 16MHz ; Oscillator Type: Internal ; Packaging: Tape & Reel (TR) ; Program Memory Type: FLASH ; EEPROM Size: 128 x 8 ; Core Processor: AVR ; Data Converters:

U2403B-M : Pmic - Battery Management Integrated Circuit (ics) Tube 6 V ~ 13.7 V; IC TIMER/CURRENT-CHARGE 8-DIP Specifications: Battery Chemistry: - ; Function: Charge Management ; Package / Case: 8-DIP (0.300", 7.62mm) ; Packaging: Tube ; Operating Temperature: -10C ~ 85C ; Voltage - Supply: 6 V ~ 13.7 V ; Lead Free Status: Contains Lead ; RoHS Status: RoHS Non-Compliant

AT27C256R-20TC : 32K X 8 OTPROM, 120 ns, PQCC32 Specifications: Memory Category: PROM ; Density: 262 kbits ; Number of Words: 32 k ; Bits per Word: 8 bits ; Package Type: PLASTIC, MS-016AE, LCC-32 ; Pins: 32 ; Logic Family: CMOS ; Supply Voltage: 5V ; Access Time: 120 ns ; Operating Temperature: -40 to 125 C (-40 to 257 F)

TS(X)PC603EVAB/C2LL : 32-BIT, 80 MHz, RISC PROCESSOR, CQFP240 Specifications: Architecture: RISC ; Data Bus: 64-Bit ; Supply Voltage: 3.3V ; Package Type: QFP, Other, CERAMIC, QFP-240 ; Pin Count: 240 ; Clock Speed: 80 MHz ; Operating Temperature: -55 to 125 C (-67 to 257 F)

 
0-C     D-L     M-R     S-Z