Details, datasheet, quote on part number: AT49BV8192AT-90TI
PartAT49BV8192AT-90TI
CategoryMemory => Flash => 8 Mb
Description8M Bit, 2.7-Volt Read And 2.7-Volt Byte-Write, Bottom Boot
CompanyATMEL Corporation
DatasheetDownload AT49BV8192AT-90TI datasheet
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Features, Applications
Features

Single-voltage Read/Write Operation: to 3.6V (BV), to 3.6V (LV) Fast Read Access Time 70 ns Internal Erase/Program Control Sector Architecture One 8K Word (16K Bytes) Boot Block with Programming Lockout Two 4K Word (8K Bytes) Parameter Blocks One 496K Word (992K Bytes) Main Memory Array Block Fast Sector Erase Time 10 seconds Byte-by-byte or Word-by-word Programming 30 s Typical Hardware Data Protection Data Polling for End of Program Detection Low Power Dissipation 25 mA Active Current 50 A CMOS Standby Current Typical 10,000 Write Cycles

Description

The AT49BV/LV008A(T) and AT49BV/LV8192A(T) are 3-volt, 8-megabit Flash memories organized as 1,048,576 words of 8 bits each or 512K words of 16 bits each. Manufactured with Atmel's advanced nonvolatile CMOS technology, the devices offer access times 70 ns with power dissipation of just at 2.7V read. When deselected, the CMOS standby current is less than 50 A.

Pin Name OE WE RESET RDY/BUSY VPP I/O15 (A-1) BYTE NC Function Addresses Chip Enable Output Enable Write Enable Reset Ready/Busy Output VPP can be left unconnected or connected to VCC, GND, or 12V. The input has no effect on the operation of the device. Data Inputs/Outputs I/O15 (Data Input/Output, Word Mode) A-1 (LSB Address Input, Byte Mode) Selects Byte or Word Mode No Connect

AT49BV/LV008A(T) Standard Pin Definition CBGA Top View (Ball Down)
AT49BV/LV008A(T) Alternate Pin Definition CBGA Top View (Ball Down)

The device contains a user-enabled "boot block" protection feature. Two versions of the feature are available: the AT49BV/LV008A/8192A locates the boot block at lowest order addresses ("bottom boot"); the AT49BV/LV008AT/8192AT locates it at highest order addresses ("top boot"). To allow for simple in-system reprogrammability, the AT49BV/LV008A(T)/8192A(T) does not require high input voltages for programming. Reading data out of the device is similar to reading from an EPROM; it has standard CE, OE and WE inputs to avoid bus contention. Reprogramming the 8192A(T) is performed by first erasing a block of data and then by programming on a byte-by-byte or word-by-word basis. The device is erased by executing the Erase command sequence; the device internally controls the erase operation. The memory is divided into four blocks for erase operations. There are two 4K word parameter block sections, the boot block, and the main memory array block. The typical number of program and erase cycles is in excess of 10,000 cycles. The optional 8K word boot block section includes a reprogramming lock out feature to provide data integrity. This feature is enabled by a command sequence. Once the boot block programming lockout feature is enabled, the data in the boot block cannot be

changed when input levels of 5.5 volts or less are used. The boot sector is designed to contain user secure code. For the AT49BV/LV8192A(T), the BYTE pin controls whether the device data I/O pins operate in the byte or word configuration. If the BYTE pin is set at a logic "1" or left open, the device is in word configuration, - I/O15 are active and controlled by CE and OE. If the BYTE pin is set at logic "0", the device is in byte configuration, and only data I/O pins - I/O7 are active and controlled by CE and OE. The data I/O pins - I/O14 are tri-stated and the I/O15 pin is used as an input for the LSB (A-1) address function.

INPUT/OUTPUT BUFFERS PROGRAM DATA LATCHES Y-GATING MAIN MEMORY (992K BYTES) PARAMETER BLOCK 2 8K BYTES PARAMETER BLOCK 1 8K BYTES BOOT BLOCK 16K BYTES

INPUT/OUTPUT BUFFERS PROGRAM DATA LATCHES Y-GATING
BOOT BLOCK 16K BYTES PARAMETER BLOCK 1 8K BYTES PARAMETER BLOCK 2 8K BYTES MAIN MEMORY (992K BYTES)

INPUT/OUTPUT BUFFERS PROGRAM DATA LATCHES Y-GATING MAIN MEMORY (496K WORDS) PARAMETER BLOCK 2 4K WORDS PARAMETER BLOCK 1 4K WORDS BOOT BLOCK 8K WORDS

BOOT BLOCK 8K WORDS PARAMETER BLOCK 1 4K WORDS PARAMETER BLOCK 2 4K WORDS MAIN MEMORY (496K WORDS)

 

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