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Part: BC856F
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> PNP
Description: Small Signal Transistor, General Purpose Bipolar Transistor
Company: AUK Corporation
Datasheet: Download BC856F datasheet File size : 49 kB
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Datasheet text preview:
Semiconductor
BC856F
PNP Silicon Transistor
Descriptions
· General purpose application · Switching application
Features
· High voltage : VCEO=-55V · Complementary pair with BC846F
Ordering Information
Type NO. BC856F Marking TA : hFE rank Package Code SOT-23F
Outline Dimensions
unit : mm
2.4±0.1 1.6±0.1
1
2.9±0.1 1.90 BSC
3
0.4±0.05 0.9±0.1
2
0.15±0.05
PIN Connections 1. Base 2. Emitter 3. Collector
0~0.1
KST-2092-000
1
BC856F
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25°C) °
Symbol
VCBO V CE O VEBO IC PC Tj Tstg
Ratings
-80 -55 -5 -100 200 150 -55~150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characte ristic
Collector-Emitter breakdown voltage Base-Emitter turn on voltage Base-Emitter saturation voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance Noise figure
(Ta=25°C) °
Symbol
BVCEO VBE(ON) VBE(sat) VCE(sat) ICBO hFE* fT Cob NF
Test Condition
IC=-2mA, IB=0 VCE=-5V, IC=-2mA IC=-100mA, IB=-5mA IC=-100mA, IB=-5mA VCB=-35V, IB=0 VCE=-5V, IE=-2mA VCB=-5V, IC=-10mA VCB=-10V, IE=0, f=1MHz VCE=-5V, IC=-200µA, f=1KHz,Rg=2K
Min. Typ. Max.
-55 110 -900 150 -700 -650 -15 800 4.5 10
Unit
V mV mV mV nA MHz pF dB
* : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800
KST-2092-000
2
BC856F
Electrical Characteristic Curves
Fig. 1 PC-Ta Fig. 2 IC-VBE
Fig. 3 IC-VCE
Fig. 4 hFE-IC
Fig. 5 VCE(sat) -IC
KST-2092-000
3
Others parts begin by bc
BC-1 BC-2 BC-3 BC-4 BC-5 BC-6 BC-7 BC-8 BC-9 BC-10 BC-11 BC-12 BC-13 BC-14 BC-15 BC-16 BC-17 BC-18 BC-19 BC-20 BC-21 BC-22 BC-23
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