Details, datasheet, quote on part number: STK730F
PartSTK730F
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs
DescriptionAdvanced Power MOSFET
CompanyAUK Corporation
DatasheetDownload STK730F datasheet
Quote
Find where to buy
 
  

 

Features, Applications

Features

Avalanche rugged technology. Low input capacitance. Improved gate charge. Low leakage current : 10uA (Max.) @ VDS=400V.

Drain-Source voltage Gate-Source voltage Continuous Drain current (Tc=25) Continuous Drain current (Tc=100) Drain Current-Pulsed Power Dissipation (Tc=25) Linear Derating Factor Single Pulsed Avalanche Energy Avalanche current Repetitive Avalanche Energy

Peak Diode Recovery dv/dt Operating Junction and Storage temperature range Maximum lead temp. for soldering Purpose, 1/8" from case for 5-seconds

Drain-Source breakdown voltage Gate-Threshold voltage Drain-source leakage current Gate-source leakage Drain-Source on-resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain("Miller")charge

BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd

Continuous source current Pulsed-source current Diode forward voltage Reverse recovery time Reverse recovery charge

Note ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature RG=27 , starting TJ=25 ISD 5.5A, di/dt 140A/us, VDD BVDSS, starting TJ=25 Pulse Test : Pulse Width=250us, Duty cycle 2% Essentially independent of operating temperature


 

Some Part number from the same manufacture AUK Corporation
STK730FC Advanced Power MOSFET
STK830F
STK830FC
STN2222 NPN Silicon Transistor
STN2222A
STN2907 PNP Silicon Transistor
STN2907A
STS123 Small Signal Transistor, General Purpose Bipolar Transistor
STS124
STS8050 Small Signal Transistor, General Purpose Bipolar Transistor
STS8550
STS9012
STS9013
STS9014
STS9015
STS9018
SUD492H Diode , General Switching Diode
SUD494J
SUD494N Silicon Epitaxial Planar Diode
SUF520J Small Signal Transistor , Complex MOS-FET
SUF620EF
Same catergory

BC239 : NPN Epitaxial Silicon Transistor. Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCES VCEO VEBO PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature : BC238/239 Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC238/239 Emitter.

FS0402BH : Sensitive Gate SCRs. IT(RMS) (A) = 4.0 ;; VDRM/VRRM(V) = 200 600 ;; Igt (A) = ;; Package = TO220AB.

HAT2164H : for General Switching. Capable 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) 2.5 m typ. (at VGS 10 V) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage.

KDR732 : = Schottky Barrier Diode ;; Package = Usm. HIGH SPEED RECTIFICATION (SWITCHING REGULATORS, CONVERTERS, CHOPPERS) UNIVERSAL-USE RECTIFIERS. Low Forward Voltage VF max=0.55V Fast reverse recovery time (trr max=10nS) Low switching noise. Low leakage current and high reliablility due to Highly reliable planar structure. Ultrasmall-sized package permtting KDR732 applied sets to be made small and slim.

KP247 : Standard Rectifier (trr More Than 500ns), Package : See_factory.

LD430850 : Style = Phase Control ;; Type = SCR Module ;; Voltage = 800V ;; Current = 500A ;; Circuit Configuration = Dual SCR.

MDI300-12A4 : 1200V Igbt Module. E 72873 Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA Ptot TJ Tstg VISOL 50/60 Hz, RMS = 1 min IISOL mA t=1s Insulating material: Al2O3 Mounting torque (module) (teminals) dA a Weight Creepage distance on surface Strike distance through air Max. allowable acceleration Typical Conditions to 150C; RGE 20 kW Continuous Transient 1 ms VGE 15 V, VCE = VCES,.

UPF21010 : LDMOS.

ZTX549 : PNP Low Sat Transistor. ISSUE 1 MARCH 94 * 30 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation: at Tamb=25C derate above 25C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter.

STD10NM60N : Power MOSFETs N-channel 600 V, 0.53 ?, 8 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET.

0805Y561M101C : CAPACITOR, CERAMIC, MULTILAYER, 100 V, Y5V, 0.00056 uF, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 5.60E-4 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 100 volts ; Mounting.

0821-1X1T-E6 : DATACOM TRANSFORMER FOR. s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER.

C7R16JT : RESISTOR, WIRE WOUND, 7 W, 5 %, 200 ppm, 0.16 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED, ROHS COMPLIANT ; Resistance Range: 0.1600 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 200 ±ppm/°C ; Power Rating: 7 watts (0.0094.

H6096NL : DATACOM TRANSFORMER FOR ETHERNET APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: 0 to 70 C (32 to 158 F).

LBTM001132N5-D0E : 1 ELEMENT, 2100 uH, AMORPHOUS MAGNETIC-CORE, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Core Material: AMORPHOUS MAGNETIC ; Lead Style: Radial, WIRE ; Standards and Certifications: RoHS ; Application: General Purpose, DC-DC CONVERTER ; Inductance Range: 2100 microH ; Rated DC Current: 1000 milliamps.

PF0410-180-JTQ : 1 ELEMENT, 18 uH, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Lead Style: Axial, WIRE ; Molded / Shielded: Shielded ; Application: General Purpose, RF Choke ; Inductance Range: 18 microH ; Rated DC Current: 300 milliamps ; Operating Temperature: -55 to 125 C (-67 to 257 F).

SVC230-TB-E : VARIABLE CAPACITANCE DIODE. s: Diode Type: VARIABLE CAPACITANCE DIODE.

ULRB11206R0050FLFSLTA : RESISTOR, CURRENT SENSE, METAL STRIP, 1 W, 1 %, 100 ppm, 0.005 ohm, SURFACE MOUNT, 1206. s: Category / Application: Current Sensing, General Use ; Technology / Construction: METAL STRIP ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 1206, CHIP, ROHS COMPLIANT ; Resistance Range: 0.0050 ohms ; Tolerance: 1 +/- % ; Temperature Coefficient:.

 
0-C     D-L     M-R     S-Z