Details, datasheet, quote on part number: STK730F
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs
DescriptionAdvanced Power MOSFET
CompanyAUK Corporation
DatasheetDownload STK730F datasheet
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Features, Applications


Avalanche rugged technology. Low input capacitance. Improved gate charge. Low leakage current : 10uA (Max.) @ VDS=400V.

Drain-Source voltage Gate-Source voltage Continuous Drain current (Tc=25) Continuous Drain current (Tc=100) Drain Current-Pulsed Power Dissipation (Tc=25) Linear Derating Factor Single Pulsed Avalanche Energy Avalanche current Repetitive Avalanche Energy

Peak Diode Recovery dv/dt Operating Junction and Storage temperature range Maximum lead temp. for soldering Purpose, 1/8" from case for 5-seconds

Drain-Source breakdown voltage Gate-Threshold voltage Drain-source leakage current Gate-source leakage Drain-Source on-resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain("Miller")charge

BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd

Continuous source current Pulsed-source current Diode forward voltage Reverse recovery time Reverse recovery charge

Note ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature RG=27 , starting TJ=25 ISD 5.5A, di/dt 140A/us, VDD BVDSS, starting TJ=25 Pulse Test : Pulse Width=250us, Duty cycle 2% Essentially independent of operating temperature


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