Details, datasheet, quote on part number: AS5C512K8F-30E/IT
CategoryMemory => SRAM => Async. SRAM => 4 Mb
Description512k X 8 High Speed SRAM With Revolutionary Pinout
CompanyAustin Semiconductor Intl.
DatasheetDownload AS5C512K8F-30E/IT datasheet


Features, Applications

Ultra High Speed Asynchronous Operation Fully Static, No Clocks Multiple center power and ground pins for improved noise immunity Easy memory expansion with CE\ and OE\ options All inputs and outputs are TTL-compatible Single +5V Power Supply 10% Data Retention Functionality Testing (Contact Factory) Cost Efficient Plastic Packaging Extended Testing Over to +125C for plastics Plastic 36 pin PSOJ is fully compatible with the Ceramic 36 pin SOJ 3.3V Future Offering


Timing 15ns access 17ns access 20ns access 25ns access 35ns access 45ns access Operating Temperature Ranges Military to +125oC) Industrial to +85oC) Package(s) Ceramic LCC Ceramic Flatpack Plastic SOJ Ceramic SOJ 2V data retention/low power Radiation Tolerant (EPI)

XT IT The is a high speed SRAM. It offers flexibility in high-speed memory applications, with chip enable (CE\) and output enable (OE\) capabilities. These features can place the outputs in High-Z for additional flexibility in system design. Writing to these devices is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH and CE\ and OE\ go LOW. As a option, the device can be supplied offering a reduced power standby mode, allowing system designers to meet low standby power requirements. This device operates from a single +5V power supply and all inputs and outputs are fully TTL-compatible. The AS5C512K8DJ offers the convenience and reliability of the AS5C512K8 SRAM and has the cost advantage of a durable plastic. The AS5C512K8DJ is footprint compatible with 36 pin CSOJ package of the SMD 5692-95600.

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- A18 Address Inputs Write Enable Chip Enable Output Enable Data Inputs/Outputs Power Ground No Connection

Voltage on Vcc Supply Relative to Vss to +7.0V Storage Temperature to +150C Storage Temperature to +125C Short Circuit Output Current (per I/O)...........................20mA Voltage on any Pin Relative to Vcc+1V Maximum Junction Temperature**..............................+150C Power Dissipation................................................................1W

*Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow, and humidity.

"L" Version Only ISBTLP CE\ > Vcc -0.2V; Vcc = MAX VIN<Vss +0.2V or VIN>Vcc = 0 "L" Version Only ISBCLP ISBCSP

PARAMETER Input Capacitance Output Capactiance CONDITIONS = 1MHz VIN = 0


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