Details, datasheet, quote on part number: 2N3771
CategoryDiscrete => Transistors => Bipolar => General Purpose
Description40V NPN Silicon Power Transistor
CompanyBoca Semiconductor
DatasheetDownload 2N3771 datasheet
Cross ref.Similar parts: 2N377, 2N5301, 2N5302
Find where to buy
Some Part number from the same manufacture Boca Semiconductor
2N3772 60V NPN Silicon Power Transistor
2N3773 140V Complementary NPN Silicon Power Transistor
2N3789 60V PNP Silicon Power Transistor
2N3790 80V PNP Silicon Power Transistor
2N3791 60V PNP Silicon Power Transistor
2N3792 80V PNP Silicon Power Transistor
2N3902 400V NPN Silicon Power Transistor
2N4032 60V PNP Silicon General Purpose Transistor
2N4033 80V PNP Silicon General Purpose Transistor
2N4036 65V PNP Silicon Planar Transistor
2N4231A 40V Complementary NPN Silicon Power Transistor
2N4232A 60V Complementary NPN Silicon Power Transistor
2N4233A 80V Complementary NPN Silicon Power Transistor
2N4234 40V PNP General Purpose Transistor
2N4235 60V PNP General Purpose Transistor
2N4236 80V PNP General Purpose Transistor
2N4237 40V NPN General Purpose Transistor
2N4238 60V NPN General Purpose Transistor
2N4239 80V NPN General Purpose Transistor
2N4240 300V Complementary NPN Silicon Power Transistor
2N4347 Discrete->transistors->power Transistors

1N5347B : 10 V, 5 Watt Surmetic 40 Silicon Zener Diode

1N5358B : 22 V, 5 Watt Surmetic 40 Silicon Zener Diode

2N3055 : Complementary Silicon Power Transistor

2N3636 : PNP Silicon General Purpose Transistor

2N3700 : General Transistor

2N5551 : 150 V, NPN Epitaxial Planar Selicon High Voltage Transistor

2N6057 : 60 V, Darlington Complementary NPN Selicon Power Transistor

2N6491 : 80 V, PNP Plastic Power Transistor

2N718A : General Purpose Transistor

BU406 : 200 V, NPN Silicon Power Transistor

MC78L24ABD : 3-terminal 0.1a Negative Voltage Regulators

MJ10007 : 500 V, NPN Silicon Power Darlington Transistor

Same catergory

2SC2859 : Transistor ( Audio Frequency Low Power, Driver Stage Amplifier, Switching Applications ).

CM431290 : Style = Phase Control ;; Type = SCR Module ;; Voltage = 1200V ;; Current = 90A ;; Circuit Configuration = Dual SCR.

DTA114T : Small Signal. Digital Transistor (built-in Resistors). ! 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only.

FCA50CC50 : . is a dual power MOSFET module designed for fast swiching applications of high voltage and current. 2 devices are serial connected with a fast recovery diode 100ns reverse connected across each MOSFET. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ID 50A, VDSS 500V Suitable for high.

MBR3035PT : 5 to 100 Amp. Schottky Rectifier. Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Dual rectifier construction, positive center-tap Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free-wheeling, and polarity.

UF3030 : Ultra Fast Rectifier (less Than 100ns), Package : TO-3P.

05002820AMZP : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.000082 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 8.20E-5 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology.

ACR05B100JGS : CAP,CERAMIC,10PF,50VDC,5% -TOL,5% +TOL,C0G TC CODE,-30,30PPM TC. s: Dielectric: Ceramic Composition.

AP2316GN : 30 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0420 ohms ; PD: 1380 milliwatts ; Package Type: ROHS COMPLIANT PACKAGE-3 ; Number of units in IC: 1.

BDY28B-QR-B : 6 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-204AA. s: Polarity: NPN ; Package Type: TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN.

PT-7507 : 50 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-63. s: Polarity: NPN ; Package Type: TO-63, 3 PIN.

UFT21260A : 100 A, 600 V, SILICON, RECTIFIER DIODE, TO-249. s: Arrangement: Common Anode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, ULTRA FAST RECOVERY ; IF: 100000 mA ; Pin Count: 3 ; Number of Diodes: 2.

1210S3F2001T5E : RES,SMT,THICK FILM,2K OHMS,200WV,1% +/-TOL,-100,100PPM TC,1210 CASE. s: Category / Application: General Use.

2N3506AU4 : 3000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: HERMETIC SEALED, CERAMIC, U4 3 PIN.

43403 : 2 ELEMENT, 20000 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 2 ; Lead Style: Gull ; Application: General Purpose, Power Choke ; Inductance Range: 20000 microH ; Rated DC Current: 140 milliamps.

0-C     D-L     M-R     S-Z