Digchip : Database on electronics components
Electronic components database
Search:                      In section:
Member, Distributor  
Log In
Email:
Password:

Details, datasheet, quote on part number:OPT210W
 
 
Part:OPT210W
Category:Analog & Mixed-Signal Processing => Amplifiers
Description:Monolithic Photodiode And Amplifier 300khz Bandwidth at RF = 1mw
Company:Burr-Brown Corporation
Datasheet:Download OPT210W datasheet   File size : 122 kB
Request For quote:  Find where to buy OPT210W
 



Datasheet text preview:
®
FPO
OPT210
MONOLITHIC PHOTODIODE AND AMPLIFIER 300kHz Bandwidth at RF = 1M
FEATURES
q BOOTSTRAP ANODE DRIVE: Extends Bandwidth: 900kHz (RF = 100K) Reduces Noise q LARGE PHOTODIODE: 0.09" x 0.09" q HIGH RESPONSIVITY: 0.45A/W (650nm) q EXCELLENT SPECTRAL RESPONSE q WIDE SUPPLY RANGE: ±2.25 to ±18V q TRANSPARENT DIP, SIP AND SURFACEMOUNT PACKAGES
DESCRIPTION
The OPT210 is a photodetector consisting of a high performance silicon photodiode and precision FETinput transimpedance amplifier integrated on a single monolithic chip. Output is an analog voltage proportional to light intensity. The large 0.09" x 0.09" photodiode is operated at low bias voltage for low dark current and excellent linearity. A novel photodiode anode bootstrap circuit reduces the effects of photodiode capacitance to extend bandwidth and reduces noise. T h e integrated combination of photodiode and transimpedance amplifier on a single chip eliminates the problems commonly encountered with discrete designs such as leakage current errors, noise pick-up and gain peaking due to stray capacitance. The OPT210 operates from ±2.25 to ±18V supplies and quiescent current is only 2mA. Available in a transparent 8-pin DIP, 8-lead surface-mount and 5-pin SIP, it is specified for 0° to 70°C operation.
SPECTRAL RESPONSIVITY
Blue
Ultraviolet
APPLICATIONS
q BARCODE SCANNERS q MEDICAL INSTRUMENTATION q LABORATORY INSTRUMENTATION q POSITION AND PROXIMITY DETECTORS q PARTICLE DETECTORS
Red
V+ 1 (2) 2 (3)
Green Yellow
RF
0.5
Infrared
0.5 0.4 0.3 0.2 0.1 0 700 800 900 1000 1100
OPT210 5 VO
0.4 0.3 0.2 0.1 0 100
Using External 1M Resistor
+1
(5)
8
(1)
3
(4) V­
DIP Pins
(SIP Pins)
200 300 400 500
600
Wavelength (nm)
International Airport Industrial Park · Mailing Address: PO Box 11400, Tucson, AZ 85734 · Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 · Tel: (520) 746-1111 · Twx: 910-952-1111 Internet: http://www.burr-brown.com/ · FAXLine: (800) 548-6133 (US/Canada Only) · Cable: BBRCORP · Telex: 066-6491 · FAX: (520) 889-1510 · Immediate Product Info: (800) 548-6132
®
PDS-1113B 3
OPT210
Photodiode Responsivity (A/W)
Voltage Output (V/µW)
SPECIFICATIONS
At TA = +25°C, VS = ±15V, = 650nm, External RF = 1M, RL = 10k, unless otherwise noted. OPT210P OPT210W PARAMETER RESPONSIVITY Photodiode Current Unit-to-Unit Variation Voltage Output Nonlinearity Photodiode Area DARK ERROR, RTO Offset Voltage vs Temperature vs Power Supply Voltage Noise FREQUENCY RESPONSE Bandwidth Rise Time Settling Time, 1% 0.1% 0.01% Overload Recovery OUTPUT Voltage Output, Positive Positive Negative(1) Capacitive Load, Stable Operation Short-Circuit Current(2) POWER SUPPLY Operating Range Quiescent Current TEMPERATURE RANGE Specification Operating Storage JA CONDITIONS = 650nm = 650nm, External RF = 1M (0.09 x 0.09in) (2.29 x 2.29mm) MIN TYP 0.45 ±5 0.45 0.01 0.008 5.2 ±2 ±35 100 160 300 1.2 3 8 20 7 (V+)­1.25 ­0.4 (V+)­0.75 (V+)­1 ­0.5 500 +50 ±18 ±4 70 70 85 100 ±10 1000 MAX UNITS A/W % V/µW % of FS in2 mm2 mV µV/°C µV/V µVr ms kHz µs µs µs µs µs V V pF mA V mA °C °C °C °C/W
VS = ±2.25V to ±18V BW = 0.01Hz to 100kHz External RF = 1M 10% to 90% FS to Dark step
100% Overdrive RL = 10k RL = 5k RL = 10k
±2.25 +2.0/­1.7 0 0 ­25
NOTES: (1) Output typically swings to 0.5V below the voltage applied to the non-inverting input terminal, which is normally connected to ground. (2) Positive current (sourcing) is limited. Negative current (sinking) is not limited.
PHOTODIODE SPECIFICATIONS
PHOTODIODE PARAMETER Photodiode Area Current Responsivity Dark Current vs Temperature Capacitance Effective Capacitance(1) CONDITIONS (0.09 x 0.09in) (2.29 x 2.29mm) = 650nm VD = ­1.2V VD = ­1.2V VD = ­1.2V MIN TYP 0.008 5.2 0.45 865 70 Doubles every 10°C 550 10 MAX UNITS in2 mm2 A/W µA/W/cm2 pA pF pF
NOTES: (1) Effect of photodiode capacitance is reduced by internal buffer bootstrap drive. See text
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant any BURR-BROWN product for use in life support devices and/or systems.
®
OPT210
2
OP AMP SPECIFICATIONS
Op amp specifications provided for comparative information only. OP AMP PARAMETER INPUT Offset Voltage vs Temperature vs Power Supply Input Bias Current Inverting Input vs Temperature Non-inverting Input NOISE Voltage Noise f = 10Hz f = 100Hz f = 1kHz Current Noise Density, Inverting Input INPUT VOLTAGE RANGE Common-Mode Input Range(1) Common-Mode Rejection INPUT IMPEDANCE Inverting Input Impedance Non-Inverting Input Impedance OPEN-LOOP GAIN Open-Loop Voltage Gain FREQUENCY RESPONSE Bandwidth, Small Signal Rise Time, Large Signal Settling Time, 1% 0.1% 0.01% Overload Recovery OUTPUT Voltage Output, Positive Positive Negative(1) Capacitive Load, Stable Operation Short-Circuit Current(2) POWER SUPPLY Operating Voltage Quiescent Current VO = 0V to +13.75V CONDITIONS MIN TYP ±2 ±35 100 15 Doubles every 10°C 300 MAX UNITS mV µV/°C µV/V pA µA
BW = 0.01Hz to 100kHz
20 9 6 0.8 VS±2.25 65 3x1010||3 250 70 35 25 240 390 800 7 (V+)­1.25 ­0.4 (V+)­0.75 (V+)­1 ­0.5 500 +50 ±18 ±4
nV/Hz nV/Hz nV/Hz fA/Hz V dB || pF k dB MHz ns ns ns ns µs V V pF mA V mA
10% to 90% 10V step
100% Overdrive RL = 10k RL = 5k RL = 10k
±2.25 +1.7/­1.4
NOTES: (1) Output typically swings to 0.5V below the voltage applied to the non-inverting input terminal, which is normally connected to ground. (2) Positive current (sourcing) is limited. Negative current (sinking) is not limited.
BUFFER SPECIFICATIONS
Buffer specifications provided for comparative information only. BUFFER PARAMETER INPUT Offset Voltage(1) Input Bias Current vs Temperature Input Impedance FREQUENCY RESPONSE Bandwidth, Small Signal OUTPUT Current Voltage Gain POWER SUPPLY Operating Range Quiescent Current NOTE: (1) Intentional voltage offset to reverse bias photodiode. ±2.25 CONDITIONS MIN TYP ­1.2 15 Doubles every 10°C 1011||3 500 ±200 0.99 ±18 MAX UNITS V pA || pF MHz µA V/V V mA
±0.3
®
3
OPT210