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Part: 2N4351
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description: 25 V, N-channel Enhancement Mode MOSFET General Purpose Amplifier/switch
Company: Calogic, LLC
Datasheet: Download 2N4351 datasheet File size : 143 kB
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Datasheet text preview:
CORPORATION
N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch
2N4351
FEATURES
· Low ON Resistance · Low Capacitance gh Gain · Hiigh Gate Breakdown Voltage ·H · Low Threshold Voltage
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Drain-Source Voltage or Drain-Body Voltage . . . . . . . . . . 25V Peak Gate-Source Voltage (Note 1) . . . . . . . . . . . . . . . ±125V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC Operating Temperature Range . . . . . . . . . . . -55oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . 3mW/ oC
NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or an y other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TO-72
ORDERING INFORMATION Part
D C G S
Package Hermetic TO-72 Sorted Chips in Carriers
Temperature Range -55oC to +150oC -55oC to +150oC
2N4351 X2N4351
1003
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
SYMBOL BVDSS IGSS IDSS VGS(th) ID(on) VDS(on) rDS(on) | yfs | Cr s s Cis s Cd(sub) td(on) tr td(off) tf PARAMETER Drain-So urce Breakdown Voltage Gate Leakage Current Ze ro-Gat e-Volta ge Drain Current Gate -Source Threshold Voltage "ON" Drain Current Drai n-So urce "ON" Voltage Drai n-So urce Resistance Forward Transfer Admittance Reverse Transfer Capacitance (Note 2) In pu t Capacitance (Note 2) Drain-Su bstrate Capacitance (Note 2) Turn-On Delay (Note 2) Rise Time (Note 2) Turn-Off Delay (Note 2) Fa ll Time (Note 2) 1000 1.3 5.0 5.0 45 65 60 100 ns pF 1 3 1 300 MIN 25 10 10 5 MAX UNITS V pA nA V mA V ohms µS TEST CONDITIONS ID = 10µA, VGS = 0 VGS = ±30V, VDS = 0 VDS = 10V, VGS = 0 VDS = 10V, ID = 10µA VGS = 10V, VDS = 10V ID = 2mA, VGS = 10V VGS = 10V, ID = 0, f = 1kHz VDS = 10V, ID = 2mA, f = 1kHz VDS = 0, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, f = 1MHz VD(SUB) = 10V, f = 1MHz
NOTES: 1. Device must not be tested at ±125V more than once or longer than 300ms. 2. Fo r design reference only, not 100% tested.
Others parts begin by 2n
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