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Details, datasheet, quote on part number:2N4352
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| Part: | 2N4352 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | 25 V, P-channel Enhancement Mode MOSFET General Purpose Amplifier/switch |
| Company: | Calogic, LLC |
| Datasheet: | Download 2N4352 datasheet File size : 19 kB |
| Request For quote: | Find where to buy 2N4352
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Datasheet text preview:
P-Channel Enhancement Mode MOSFET Amplifier/Switch
CORPORATION
2N4352
FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC Operating Temperature Range . . . . . . . . . . . -55oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . 1.7mW/ oC
NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or an y other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Low ON Resistance Low Capacitance High Gain P-Channel Complement to 2N4341 PIN CONFIGURATION
TO-72
ORDERING INFORMATION
D C G S
Part 2N4352 X2N4352
Package Hermetic TO-72 Sorted Chips in Carriers
Temperature Range -55oC to +150oC -55oC to +150oC
1503
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
SYMBOL V(BR)DSX IDSS IGSS VGS(th) VDS(on) ID(on) rDS(on) | yfs | Cis s Cr s s Cd(sub) td1 tr td2 tf PARAMETER Drain-So urce Breakdown Voltage Ze ro-Gat e-Volta ge Drain Current Gate Reverse Current Gate Threshold Voltage Drai n-So urce On-Voltage On-Sta te Drain Current Drai n-So urce Resistance Forward Transfer Admittance In pu t Capacitance Reverse Transfer Capacitance Drain-Su bstrate Capacitance Turn-On Delay Rise Time Turn-Off Delay Fa ll Time 1000 5.0 1.3 5.0 45 65 60 100 ns ID = -2.0mAdc, VDS = -10Vdc VGS = -10V pF -3. 0 600 -1. 0 MIN -25 -10 -10 ±10 -5. 0 -1.0 MAX UNITS Vdc nAdc µAdc pA Vdc V mA ohms µmho TEST CONDITIONS ID = -10µA, VGS = 0 VDS = -10V, VGS = 0, TA = 25oC VDS = -10V, VGS = 0, TA = 150 oC VGS = ±30V, VDS = 0 VDS = -10V, ID = -10µA ID = -2mA, VGS = -10V VGS = -10V, VDS = -10V VGS = -10V, ID = 0, f = 1.0kHz VDS = -10V, ID = 2.0mA, f = 1.0kHz VDS = -10V, VGS = 0, f = 140MHz VDS = 0, VGS = 0, f = 140MHz VD(sub) = -10V, f = 140kHz
CALOGIC CORPORATION, 237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025
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