Digchip : Database on electronics components
Electronics components database



Details, datasheet, quote on part number: 2N5115
 
 
Part number2N5115
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => PHEMTs
Description30 V, P-channel JFET Switch
CompanyCalogic, LLC
DatasheetDownload 2N5115 datasheet
Request For QuoteFind where to buy 2N5115
 


 
Specifications, Features, Applications

GENERAL DESCRIPTION Ideal for inverting switching or "Virtual Gnd" switching into inverting input of Op. Amp. No driver is required and ±10VAC signals can be handled using only +5V logic (TTL or CMOS). FEATURES ON Resistance· Low· ID(off)<500pA· Switches directly from TTL Logic PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Gate-Drain or Gate-Source Voltage. 30V Gate Current. 50mA Storage Temperature Range. to +200oC Operating Temperature Range. to +200oC Lead Temperature (Soldering, 10sec). +300oC Power Dissipation. 500mW Derate above 3mW/ oC

NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

SYMBOL td tr toff tf PARAMETER Turn-ON Delay Time Rise Time (Note 2) Turn-OFF Delay Time (Note 2) Fall Time (Note 2) 2N5114 MAX 2N5115 MAX 2N5116 MAX ns UNITS

SYMBOL BVGSS IGSS PARAMETER Gate-Source Breakdown Voltage Gate Reverse Current 2N5114 MIN MAX ID(off) Drain Cutoff Current -1.0 Gate-Source Pinch-Off Voltage 2N5115 MIN MAX 2N5116 MIN MAX UNITS µA V TEST CONDITIONS = 1 µA, VDS = 0 VGS = 20V, VDS TA 150oC VDS = -15V VGS 12V (2N5114) VGS 7V (2N5115) VGS 5V (2N5116) VDS = -1nA

ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) (Continued)

SYMBOL PARAMETER Drain Current at Zero Gate Voltage (Note 1) Forward Gate-Source Voltage Drain-Source ON Voltage Static Drain-Source ON Resistance Small-Signal Drain-Source ON Resistance Common-Source Input Capacitance (Note 2) Common-Source Reverse Transfer Capacitance (Note 2) 2N5114 MIN MAX 2N5115 MIN MAX 2N5116 MIN MAX pF UNITS TEST CONDITIONS VGS = -0 VDS -18V (2N5114) VDS -15V (2N5115) VDS = -1mA, VDS = 0 VGS -3mA (2N5116) VGS = -1mA VGS = 1kHz VDS = -15V, VGS = 1mHz VDS = 0 VGS 12V (2N5114) VGS 7V (2N5115) VGS = 1mHz

IDSS VGS(f) VDS(on) rDS(on) rds(on) Ciss
NOTES 1. Pulse test; duration 2ms. 2. For design reference only, not 100% tested.
SAMPLING SCOPE RISE TIME 0.4ns INPUT RESISTANCE 10M INPUT CAPACITANCE 1.5pF



Related products with the same datasheet
2N5116  


Some Part number from the same manufacture Calogic, LLC
2N5116 30 V, P-channel JFET Switch
2N5434 25 V, N-channel JFET Switch
2N5457 25 V, N-channel JFET General Purpose Amplifier/switch
2N5457-59 N-channel JFET General Purpose Amplifier/switch
2N5458 25 V, N-channel JFET General Purpose Amplifier/switch
2N5459
2N5484 25 V, N-channel JFET High Frequency Amplifier
2N5911 25 V, Dual N-channel JFET High Frequency Amplifier
2N5911-12 Dual N-channel JFET High Frequency Amplifier
2N5912 25 V, Dual N-channel JFET High Frequency Amplifier
2N7000 60 V, N-channel Enhancement Mode MOS Transistor
2N7002
3N163 40 V, P-channel Enhancement Mode JFET General Purpose Amplifier Switch
3N165 40 V, Monolithic Dual P-channel Enhancement Mode JFET General Purpose Amplifier
3N170 25 V, N-channel Enhancement Mode MOSFET Switch
3N170-71 N-channel Enhancement Mode MOSFET Switch
3N171 25 V, N-channel Enhancement Mode MOSFET Switch
3N172 40 V, Diode Protected P-channel Enhancement Mode MOSFET General Purpose Amplifier/switch
3N172-73 Diode Protected P-channel Enhancement Mode MOSFET General Purpose Amplifier/switch
3N173 40 V, Diode Protected P-channel Enhancement Mode MOSFET General Purpose Amplifier/switch
3N190 40 V, Dual P-channel Enhancement Mode MOSFET General Purpose Amplifier