|
Details, datasheet, quote on part number:3N164
| |
| Part: | 3N164 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | 40 V, P-channel Enhancement Mode JFET General Purpose Amplifier Switch |
| Company: | Calogic, LLC |
| Datasheet: | Download 3N164 datasheet File size : 29 kB |
| Request For quote: | Find where to buy 3N164
|
| |
Datasheet text preview:
P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch
3N163 / 3N164
FEATURES
CORPORATION
· Very High Input Impedance · High Gate Breakdown a Switching · Fost Capacitance ·L w
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS (Note 1) (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage 3N163. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40V 3N164. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V Static Gate-Source Voltage 3N163. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±40V 3N164. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V Transient Gate-Source Voltage (Note 2) . . . . . . . . . . . . ±125V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature . . . . . . . . . . . . . . . . . . . -65oC to +200oC Operating Temperature . . . . . . . . . . . . . . . . . -55oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . 3.0mW/ oC
NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or an y other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
D
TO-72
C
S G
1503
ORDERING INFORMATION Part 3N163-64 X3N163-64 Package Hermetic TO-72 Sorted Chips in Carriers Temperature Range -55oC to +150oC -55oC to +150oC
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
SYMBOL PARAMETER 3N163 3N164 UNITS TEST CONDITIONS VGS = -40V, VDS = 0 (3N163) VGS = -30V, VDS = 0 (3N164) TA = +125oC ID = -10µA, VGS = 0 IS = -10µA, VGD = 0, VBD = 0 -5.0 -5.0 -6.5 400 800 300 ohms mA pA V VDS = VGS, I D = -10µA VDS = -15V, ID = -10µA VDS = -15V, ID = -0.5mA VDS = -15V, VGS = 0 VSD = 15V, VGS = VDB = 0 VGS = -20V, ID = -100µA VDS = +15V, VGS = -10V
MIN MAX MIN MAX IGSS Gate -Body Leakage Current -10 -25 BVDSS BVSDS VGS(th) VGS(th) VGS IDSS ISDS rDS(on) ID(on) Drai n-So urce Breakdown Voltage Source-Drain Breakdown Voltage Th resho ld Voltage Th resho ld Voltage Gate Source Voltage Ze ro Gate Voltage Drain Current Sou rce Drain Current Drain-So urce on Resistance On Drain Current -40 -40 -2.0 -2.0 -2.5 -5.0 -5.0 -6.5 200 400 250 -30 -30 -2.0 -2.0 -2.5 -10 -25 pA
-5. 0 -30.0 -3. 0 -30.0
3N163 / 3N164
CORPORATION
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC and VBS = 0 unless otherwise specified)
SYMBOL gfs gos Cis s Cr s s Coss PARAMETER Fo rward Transconductance Outp ut Admittance In pu t Capacitance - Output Shorted Reverse Transfer Capacitance Outp ut Capacitance - Input Shorted 3N163 MIN 2000 M AX 4000 250 2. 5 0.7 3. 0 3N164 MIN 1000 M AX 4000 250 2. 5 0. 7 3. 0 pF VDS = -15V, ID = -10mA, f = 1MHz (Not e 1) µS VDS = -15V, ID = -10mA, f = 1kHz UNITS TEST CONDITIONS
NOTE 1: For design reference only, not 100% tested.
SWITCHING CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified)
SYMBOL ton tr toff PARAMETER Turn-On Delay Time Rise Time Turn-Off Delay Time 3N163 MIN M AX 12 24 50 3N164 MIN M AX 12 24 50 ns VDD = -15V ID(on) = -10mA (Note 1) RG = RL = 1.4k UNITS TEST CONDITIONS
SWITCHING TIMES TEST CIRCUIT
VDD
10% 10% tr
R1
90% 10%
VOUT R2
t on
10% t off
50
INPUT PULSE RISE TIME 200ns
SAMPLING SCOPE t r 10M
0170
0160
|
|
