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Details, datasheet, quote on part number:3N170
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| Part: | 3N170 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | 25 V, N-channel Enhancement Mode MOSFET Switch |
| Company: | Calogic, LLC |
| Datasheet: | Download 3N170 datasheet File size : 23 kB |
| Request For quote: | Find where to buy 3N170
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Datasheet text preview:
N-Channel Enhancement Mode MOSFET Switch
CORPORATION
3N170 / 3N171
FEATURES HANDLING PRECAUTIONS MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device while wiring, testing, or in actual operation, follow the procedures outlined below. 1. To avoid the build-up of static charge, the leads of the devices should remain shorted together with a metal ring except when being tested or used. 2. Avoid unnecessary handling. Pick up devices by the case instead of the leads.
TO-72
· Low Switching Voltages · Fast Switching Times w Drain-Source Resistance · Low Reverse Transfer Capacitance · Lo
PIN CONFIGURATION
3. Do not insert or remove devices from circuits with the power on as transient voltages may cause permanent damage to the devices. ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified)
D
C,B G S
1003
Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±35V Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±35V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC Operating Temperature Range . . . . . . . . . . . -55oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/ oC
NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or an y other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION Part 3N170-71 X3N170-71 Package Hermetic TO-72 Sorted Chips in Carriers Temperature Range -55oC to +150oC -55oC to +150oC
3N170 / 3N171
CORPORATION
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) Substrate connected to source.
SYMBOL BVDSS IGSS PARAMETER Drain-So urce Breakdown Voltage Gate Leakage Current MIN 25 ±10 100 IDSS Ze ro-Gat e-Volta ge Drain Current 3N170 3N171 ID(on) VDS(on) rds(on) | Yf s | Cr s s Cis s Cd(sub) td(on) tr td(off) tf "ON" Drain Current Drai n-So urce "ON" Voltage Drai n-Source ON Resistance Fo rward Transfer Admittance Reverse Transfer Capacitance (Note 1) In pu t Capacitance (Note 1) Drain-Su bstrate Capacitance (Note 1) Turn-On Delay Time (Note 1) Rise Time (Note 1) Turn-Off Delay Time (Note 1) Fa ll Time (Note 1) 1000 1. 3 5.0 5. 0 3. 0 10 3.0 15 ns VDD = 10V, ID( on) = 10mA, VGS(on) = 10V, VGS(off) = 0, RG = 50 pF 1.0 1.5 10 2. 0 200 10 1. 0 VGS(th) Gate -Source Threshold Voltage 2. 0 3. 0 mA V µS VGS = 10V, VDS = 10V ID = 10mA, VGS = 10V VGS = 10V, ID = 0, f = 1kHz VDS = 10V, ID = 2.0mA, f = 1kHz VDS = 0, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, f = 1MHz VD(SUB) = 10V, f = 1MHz nA µA V MAX UNITS V pA TEST CONDITIONS ID = 10µA, VGS = 0 VGS = ±35V, VDS = 0 VGS = 35V, VDS = 0, TA = 125 oC VDS = 10V, VGS = 0 TA = 125oC VDS = 10V, ID = 10µA
NOTE 1: For design reference only, not 100% tested.
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