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Details, datasheet, quote on part number:3N172-73
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| Part: | 3N172-73 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N/P-Channel Combo |
| Description: | Diode Protected P-channel Enhancement Mode MOSFET General Purpose Amplifier/switch |
| Company: | Calogic, LLC |
| Datasheet: | Download 3N172-73 datasheet File size : 34 kB |
| Request For quote: | Find where to buy 3N172-73
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Datasheet text preview:
Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch
3N172 / 3N173
FEATURES
CORPORATION
· High Input Impedance · Diode Protected Gate
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage 3N172. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V 3N173. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Gate Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 10µA Gate Reverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 1mA Storage Temperature . . . . . . . . . . . . . . . . . . -65oC to +200oC Operating Temperature . . . . . . . . . . . . . . . . . -55oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 3.0mW/ oC
NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or an y other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TO-72
C,B
S G D
1503Z
DEVICE SCHEMATIC
1
ORDERING INFORMATION Part 3N172-73 X3N172-73
2
Package Hermetic TO-72 Sorted Chips in Carriers
Temperature Range -55oC to +150oC -55oC to +150oC
3
4
0200
ELECTRICAL CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified)
SYMBOL IGSS BVGSS BVDSS BVSDS VGS(th) VGS IDSS ISDS rDS(on) ID(on) PARAMETER Gate Reverse Current Gate Breakdown Voltage Drai n-So urce Breakdown Voltage Source-Drain Breakdown Voltage Th resho ld Voltage Gate Source Voltage Ze ro Gate Voltage Drain Current Ze ro Gate Voltage Source Current Drain Source On Resistance On Drain Current -5.0 -40 -40 -40 -2. 0 -2.0 -3. 0 -5.0 -5.0 -6.5 -0.4 -0.4 250 -30 -5.0 3N172 MIN M AX -200 -0.5 -125 -30 -30 -30 -2.0 -2.0 -2.5 -5.0 -5.0 -6.5 -10 -10 350 -30 nA ohms mA V 3N173 MIN M AX -500 -1.0 -125 UNITS pA µA ID = -10µA ID = -10µA IS = -10µA, VDB = 0 VDS = VGS, I D = -10µA VDS = -15V, ID = -10µA VDS = -15V, ID = -500µA VDS = -15V, VGS = 0 VSD = -15V, VDB = 0, VGD = 0 VGS = -20V, ID = -100µA V DS = -15V, VGS = -10V TEST CONDITIONS VGS = -20V TA = +125oC
3N172 / 3N173
CORPORATION
SMALL-SIGNAL ELECTRICAL CHARACTERISTICS TA = 25oC and Bulk (substrate) Lead Connected to Source
SYMBOL | yfs | | yos | Cis s Cr s s Coss PARAMETER Mag nit ude of Small-Signal, Common-Source, Sho rt-Circuit, Forward Transadmittance* Mag nit ude of Small-Signal, Common-Source, Sho rt-Circui t, Output Admittance* Sm all -Signal , Common-Source, Short-Circuit, In pu t Capacitance* Sm all -Signal , Common-Source, Short-Circuit, Reverse Transfer Capacitance* Sm all -Signal , Common-Source, Short-Circuit, Outp ut Capacitance* 3N172 3N173 MIN MAX MIN MAX 1500 4000 1000 4000 250 3.5 1.0 3.0 250 3.5 1.0 3.0 UNITS µS µS pF pF pF TEST CONDITIONS VDS = -15V, ID = -10mA, f = 1kHz VDS = -15V, ID = -10mA, f = 1kHz VDS = -15V, ID = -10mA, f = 1MHz VDS = -15V, ID = -10mA, f = 1MHz VDS = -15V, ID = -10mA, f = 1MHz
NOISE CHARACTERISTICS
SYMBOL NF PARAMETER Com mon -Sou rce Spot Noise Figure
o
TYPICAL 1.0
UNITS dB
TEST CONDITIONS VDS = -15V, ID = -1mA, f = 1kHz, RG = 1M
SWITCHING CHARACTERISTICS TA = 25 C Bulk (substrate) Lead Connected to Source
SYMBOL td (on) tr toff PARAMETER Turn-On Delay Time* Rise Time* Turn-Off Delay Time* 3N172 MIN M AX 12 24 50 3N173 MIN M AX 12 24 50 ns VDD = -15V, ID (on) = -10mA RG = RL = 1.4k See Test Circuit Below UNITS TEST CONDITIONS
*Registered JEDEC Data
SWITCHING TIME DETAIL
VDD
RL
MEASUREMENTS ON SAMPLING OSCILLOSCOPE WITH t rise 10M INPUT PULSE t rise 200ns PULSE WIDTH 10% VIN 50% -VIN t off -1V 10% VOUT 90% 90% -15V
0210
1.0 -0.1 -0.5 -1.0 1000
RG VIN 50
VOUT D.U.T.
0220
SWITCHING TIMES vs. ON-STATE DRAIN CURRENT
-0V 50% 90%
500
VDD = 15V
SWITCHING TIS - nSEC
RG = R L = 1.4K
100
tr t 4(on)
50
t off
t rise
10
5.0
t d(on)
-5.0
-10
ON-STATE DRAIN CURRENT - (I D(on) ) - mA
0230
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