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Details, datasheet, quote on part number:3N191
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| Part: | 3N191 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | 40 V, Dual P-channel Enhancement Mode MOSFET General Purpose Amplifier |
| Company: | Calogic, LLC |
| Datasheet: | Download 3N191 datasheet File size : 28 kB |
| Request For quote: | Find where to buy 3N191
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Datasheet text preview:
Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier
3N190 / 3N191
FEATURES
CORPORATION
· Very High Input Impedance · High Gate Breakdown 3N190-3N191 · Low Capacitance
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage (Note 1) 3N190, 3N191 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Transient Gate-Source Voltage (Note 1 and 2) . . . . . . . ±125V Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±80V Drain Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature . . . . . . . . . . . . . . . . . . . -65oC to +200oC Operating Temperature . . . . . . . . . . . . . . . . . -55oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation One Side . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Both Sides . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 525mW Total Derating above 25oC . . . . . . . . . . . . . . . . . . 4.2mW/ oC
NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or an y other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TO-99
C
2506
D2 S2 G2 D1 S1 G1
ORDERING INFORMATION Part Package Temperature Range -55oC to +150oC -55oC to +150oC 3N190-91 Hermetic TO-99 X3N190-91 Sorted Chips in Carriers
ELECTRICAL CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified)
SYMBOL IGSSR IGSSF BVDSS BVSDS VGS(th) VGS IDSS ISDS rDS(on) ID(on) PARAMETER Gate Reverse Current Gate Forward Current Drain-So urce Breakdown Voltage Source-Drain Breakdown Voltage Th resho ld Voltage Gate Source Voltage Ze ro Gate Voltage Drain Current Sou rce Drain Current Drain-So urce on Resistance On Drain Current -5.0 -4 0 -40 -2 .0 -2.0 -3.0 -5.0 -5.0 -6.5 -200 -400 300 -30.0 ohms mA V 3N190/91 MIN M AX 10 -10 -25 ID = -10µA IS = -10µA, VBD = 0 VDS = -15V, ID = -10µA VDS = VGS, I D = -10µA VDS = -15V, ID = -500µA VDS = -15V VSD = -15V, VDB = 0 VDS = -20V, ID = -100µA VDS = -15V, VGS = -10V pA VGS = 40V VGS = -40V TA = +125oC UNITS TEST CONDITIONS
3N190 / 3N191
CORPORATION
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC and VBS = 0 unless otherwise specified)
SYMBOL gfs Yos Cis s Cr s s Coss PARAMETER Fo rward Transconductance (Note 3) Outp ut Admittance In pu t Capacitance Output Shorted (Note 5) Reverse Transfer Capacitance (Note 5) Outp ut Capacitance Input Shorted (Note 5) 3N190/91 MIN MAX 1500 4000 300 4.5 1.0 3.0 pF UNITS µS VDS = -15V, ID = -10mA f = 1MHz TEST CONDITIONS f = 1kHz
SWITCHING CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified)
SYMBOL td(on) tr toff PARAMETER Turn On Delay Time Rise Time Turn Off Time MIN M AX 15 30 50 ns VDD = -15V, ID = -10mA, RG = RL = 1.4k (Note 5) UNITS TEST CONDITIONS
MATCHING CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified) 3N188 and 3N190
SYMBOL Yfs1 / Yfs2 VGS1-2 VGS1-2 T VGS1-2 T NOTES: 1. 2. 3. 4. 5. PARAMETER Forward Transconductance Ratio Gate Source Threshold Voltage Differential Gate Source Threshold Voltage Differential Cha ng e with Temperature (Note 4) Gate Source Threshold Voltage Differential Cha ng e with Temperature (Note 4) Per transistor. App roxima tely doubles for every 10oC increase in TA. Pulse test duration = 300µs; duty cycle 3%. Measured at end points, TA and TB. Fo r design reference only, not 100% tested. MIN 0.85 MAX 1.0 100 100 100 mV µV/ oC µV/ oC UNITS TEST CONDITIONS VDS = -15V, ID = -500µA, f = 1kHz VDS = -15V, ID = -500µA VDS = -15V, ID = -500µA, T = -55oC to +25 oC VDS = -15V, ID = -500µA T = +25 oC to +125oC
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