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Details, datasheet, quote on part number:J108-110
 
 
Part:J108-110
Category:Discrete => Transistors => FETs (Field Effect Transistors) => PHEMTs
Description:25 V, N-channel JFET Switch
Company:Calogic, LLC
Datasheet:Download J108-110 datasheet   File size : 22 kB
Request For quote:  Find where to buy J108-110
 



Datasheet text preview:
N-Channel JFET Switch
CORPORATION
J108 ­ J110 / SST108 ­ SST110
FEATURES Low Cost Automated Insertion Package Low Insertion Loss No Offset or Error Voltages Generated by Closed Switch Purely Resistive High Isolation Resistance from Driver Fast Switching Low Noise
· · · · · ·
APPLICATIONS Analog Switches Choppers Commutators Low-Noise Audio Amplifiers
· · · ·
PIN CONFIGURATION
SOT-23 G
TO-92
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range . . . . . . . . . . . . . -55oC to +150oC Operating Temperature Range . . . . . . . . . . . -55oC to +135oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/ oC
NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or an y other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
D S
G DS
5018
PRODUCT MARKING (SOT-23) SST1 08 I08 SST1 09 I09 SST110 I10
ORDERING INFORMATION Part Package J108-110 Plastic TO-92 XJ108-110 Sorted Chips in Carriers SST109-110 Plastic SOT-23
Temperature Range -55oC to +135oC -55oC to +135oC -55oC to +135oC
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
SYMBOL IGSS VGS(off) BVGSS IDSS ID(off) rDS(on) Cdg(off) Csg(off) Cdg(on) + Csg(on) td(on) tr td(off) tf PARAMETER Gate Reverse Current (Note 1) Gate -Sou rce Cutoff Voltage Gate -Sou rce Breakdown Voltage Drai n Saturation Current (Note 2) Drain Cutoff Current (Note 1) Drai n-So urce ON Resistance Drain-Gate OFF Capacitance Sou rce-Gate OFF Capacitance Drain-Gate Plus Source-Gate ON Capacitance Turn On Delay Time Rise Time Turn OFF Delay Time Fa ll Time
o
108 109 110 UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX -3 -3 -3 nA -3 -10 -2 -6 -0.5 -4 V -25 -25 -25 80 40 10 mA 3 3 3 nA 8 12 18 15 15 15 15 85 4 1 6 30 4 1 6 30 15 85 4 1 6 30 15 85 pF
TEST CONDITIONS VDS = 0V, VGS = -15V VDS = 5V, ID = 1µA VDS = 0V, IG = -1µA VDS = 15V, VGS = 0V VDS = 5V, VGS = -10V VDS 0.1V, VGS = 0V VDS = 0, VGS = -10V (Not e 3) f = 1MHz VDS = VGS = 0 (Not e 3) Switching Time Test Conditions (Note 3) J107 J109 J110 VDD 1.5V 1.5V 1.5V VGS(off) -12V -7V -5V RL 150 150 150
ns
NOTES: 1. App roxima tely doubles for every 10 C increase in TA. 2. Pulse test duration = 300µs; duty cycle 3%. 3. Fo r design reference only, not 100% tested.