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Part: J210-11
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> PHEMTs
Description:
Company: Calogic, LLC
Datasheet: Download J210-11 datasheet File size : 226 kB
Request For quote: Find where to buy J210-11
Datasheet text preview:
N-Channel JFET
CORPORATION
J210 J212 / SSTJ210 SSTJ212
FEATURES DESCRIPTION The J210 Series is an N-Channel JFET single device encapsulated in a TO-92 plastic package well suited for automated assembly. The device features low leakage, typically under 2 pA, low noise, under 10 nano volts per square hertz at 10 hertz and high gain. This series is excellent for mixer, oscillators and amplifier applications. ORDERING INFORMATION Part J210-11 SSTJ210-11 Package Plastic TO-92 Package Plastic SOT-23 Temperature Range -55oC to +135oC -55oC to +135oC
· Low Noise · Low Leakage · High Power Gain
e r Purpose Amplifiers · GHneUalF Amplifiers · V F/ H · Mixers · Oscillators
APPLICATIONS
PIN CONFIGURATION
SOT-23 G
TO-92
D S
G DS
PRODUCT MARKING (SOT-23)
CJ1
1 DRAIN 2 SOURCE 3 GATE
3 2 1
SSTJ210 SSTJ211 SSTJ212
Z10 Z11 Z12
BOTTOM VIEW
J210 J212 / SSTJ210 SSTJ212
CORPORATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Parameter/Test Condition Gate-Drain Voltage Gate-Source Voltage Gate Current Power Dissipation Power Derating Operating Junction Temperature Storage Temperature Lead Temperature (1/16" from case for 10 seconds) Symbol VGD VGS IG PD TJ Tstg TL Limit -25 -25 10 360 3.27 -55 to 135 -55 to 150 300 Unit V V mA mW mW/ oC o C o C o C
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
SYMBOL CHARACTERISTCS TYP1 210 MIN STATIC V(BR)GSS Gate -Sou rce Breakdown Voltage VGS(OFF ) Gate -Sou rce Cut off Voltage IDSS IGSS IG ID(O FF) VGS(F) DYNAM IC gfs gos Cis s Cr s s en Com mon -Source Forward Transconductance Com mon -Source Output Conductance Com mon -Source Input Capacitance Com mon-Source Reverse Transfer Capacitance Equ ivale nt Input Noise Voltage 4 pF 1.5 5 nV/ Hz VDS = 15V, VGS = 0V f = 1MHz 4 12 150 6 12 200 7 12 200 mS VDS = 15V, VGS = 0V f = 1kHz µS Satura tio n Drain Current Gate Reverse Current -0.5 Gate Operating Current Drain Cutoff Current Gate -Sou rce Forward Voltage -1 1 0.7 nA pA pA V TA = 125 oC VDG = 10V, ID = 1mA VDS = 10V, VGS = -8V IG = 1mA, VDS = 0V
2
211 MIN M AX MIN
212 UNIT TEST CONDITIONS M AX
MAX
-35
-25 -1 2 -3 15 -100
-25 -2.5 7 -4.5 20 -100
-25 V -4 15 -6 40 -100 mA pA
IG = -1µA, VDS = 0V VDS = 15V, ID = 1nA VDS = 15V, VGS = 0V VGS = -15V, VDS = 0V
-1
VDS = 15V, VGS = 0V f = 1kHz
NOTES: 1. For design aid only, not subject to production testing. 2. Pulse test; PW = 300µs, duty cycle 3%.
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J2-1
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