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Details, datasheet, quote on part number:PN4416
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| Part: | PN4416 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => PHEMTs |
| Description: | 30 V, N-channel JFET High Frequency Amplifier |
| Company: | Calogic, LLC |
| Datasheet: | Download PN4416 datasheet File size : 24 kB |
| Request For quote: | Find where to buy PN4416
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Datasheet text preview:
N-Channel JFET High Frequency Amplifier
CORPORATION
2N4416 / 2N4416A / PN4416
FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Gate-Source or Gate-Drain Voltage 2N4416, PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V 2N4416A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -35V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Storage Temperature Range 2N4416/2N4416A . . . . . . . . . . . . . . . . . . . -65oC to +200oC PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC +150oC Operating Temperature Range 2N4416/2N4416A . . . . . . . . . . . . . . . . . . . -65oC to +200oC PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to +135oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate above 25oC 2N4416/2N4416A . . . . . . . . . . . . . . . . . . . . . . . . 1.7mW/ oC PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.7mW/ oC
NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or an y other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
· Low Noise · Low Feedback Capacitance w · LoghOutput Capacitance · Hi Transconductance · High Power Gain
PIN CONFIGURATION
TO-72
TO-92
G D
C S
SD
G
CJ1
ORDERING INFORMATION Part 2N4416 2N4416A PN4416 X2N4416 Package Hermetic TO-72 Hermetic TO-72 Plastic TO-92 Sorted Chips in Carriers Temperature Range -55oC to +135oC -55oC to +135oC -55oC to +135oC -55oC to +135oC
2N4416 / 2N4416A / PN4416
CORPORATION
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
SYMBOL IGSS PARAMETER Gate Reverse Current -0.1 2N4 416/ PN4416 BVGSS Gate -Source Breakdown Voltage 2N4 416A 2N4 416/ PN4416 VGS(off) VGS(f) IDSS gfs gos Cr s s Cis s Coss Gate -Sou rce Cutoff Voltage 2N441 6A Gate -Source Forward Voltage Drai n Current at Zero Gate Voltage Com mon -Source Forward Transconductance Com mon-Sou rce Output Conductance Com mon -Sou rce Reverse Transfer Capacitance (Note 1) Com mon-Source Input Capacitance (Note 1) Com mon-Source Input Capacitance (Note 1) 5 4500 -2.5 -6 1 15 7500 50 0.8 4 pF 2 V mA µS µs pF f = 1MHz VDS = 15V, VGS = 0 f = 1kHz IG = 1mA, VDS = 0 -35 -6 VDS = 15V, ID = 1nA V -30 IG = -1µA, VDS = 0 µA TA = 150oC MIN MAX -0.1 UNITS nA TEST CONDITIONS VGS = -20V, VDS = 0
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC unless otherwise specified)
100M Hz SYMBOL PARAMETER MIN giss biss goss boss gfs Gps NF Com mon-Sou rce Input Conductance Com mon -Source Input Susceptance Com mon -Source Output Con du ctance Com mon-Sou rce Output Susceptance Com mon -Source Forward Tra nsconductance Com mon -Sou rce Power Gain Noi se Figure (Note 1) 18 2 M AX 100 2500 75 1000 4000 10 dB 4 VDS = 15V, ID = 5mA, RG = 1k VDS = 15V, ID = 5mA (Note 1) MIN M AX 1000 10,000 100 4000 µS VDS = 15V, VGS = 0 (Note 1) 400MHz UNITS TEST CONDITIONS
NOTE 1: For design reference only, not 100% tested.
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