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Details, datasheet, quote on part number:XM116
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Datasheet text preview:
CORPORATION
Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier
M116
FEATURES
· Low IGSS · Integrated Zener Clamp for Gate Protection
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate to Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Gate Zener Current . . . . . . . . . . . . . . . . . . . . . . . . . . . ±0.1mA Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC Operating Temperature Range . . . . . . . . . . . -55oC to +125oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 2.2mW/ oC
NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or an y other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TO-72
C
S G D
1003Z
ORDERING INFORMATION Part DEVICE SCHEMATIC
1
Package Hermetic TO-72 Sorted Chips in Carriers
Temperature Range -55oC to +125oC -55oC to +125oC
M116 XM116
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3
4
0330
ELECTRICAL CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified)
SYMBOL rDS(on) VGS(th) BVDSS BVSDS BVGBS ID(O FF) IS(OFF ) IGSS Cg s Cgd Cdb Cis s PARAMETER Drai n Source ON Resistance Gate Threshold Voltage Drain-So urce Breakdown Voltage Source-Drain Breakdown Voltage Gate -Bod y Breakdown Voltage Drai n Cuttoff Current Sou rce Cutoff Current Gate -Body Leakage Gate -Sou rce (Note 1) Gate -Drain Capacitance (Note 1) Drain-Bo dy Capacitance (Note 1) In pu t Capacitance (Note 1) 1 30 30 30 60 10 10 100 2.5 2.5 7 10 pF nA pA MIN MAX 100 200 5 V UNITS TEST CONDITIONS VGS = 20V, ID = 100µA VGS = 10V, ID = 100µA VGS = VDS, ID = 10µA ID = 1µA, VGS = 0 IS = 1µA, VGD = VBD = 0 IG = 10µA, VSB = VDB = 0 VDS = 20V, VGS = 0 VSD = 20V, VGD = VBD = 0 VGS = 20V, VDS = 0 VGB = VDB = VSB = 0, f = 1MHz Body Guarded VGB = 0, VDB = 10V, f = 1MHz VGB = 0, VDB = 10V, VBS = 0, f = 1MHz
NOTE 1: For design reference only, not 100% tested.
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