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Details, datasheet, quote on part number:XSD2100
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Datasheet text preview:
N-Channel Depletion Mode Lateral DMOS FET
CORPORATION
SD2100 / SST2100
FEATURES DESCRIPTION The SD2100/SST2100 is a depletion mode DMOS lateral FET that provides ultra high speed switching with very low capacitance. The product is available in TO-72 and surface mount SOT-143. ORDERING INFORMATION Part SD2100 SST2100 XSD2100 Package Temperature Range TO-72 -55oC to +125oC SOT-143 -55oC to +125oC Sorted Chips in Carriers -55oC to +125oC
· Fast Switching . . . . . . . . . . . . . . . . . . . . . . . . . tON 1.0ns · Low Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . crss 2pf · Low RON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 · AnaploifgieSwitches · Am l rs
APPLICATIONS
CONNECTION DIAGRAMS
3
TO-72
2
4 1
3 2
DRAIN (2) BODY (4) GATE (3)
SOURCE 1
1 2 3 4
SOURCE DRAIN GATE SUBSTRATE
3 2 1 4
4 1
BOTTOM VIEW
4
BODY AND CASE
DRAIN
2
3
GATE
SOURCE (1)
BODY IS INTERNALLY CONNECTED TO THE CASE (TOP VIEW)
PART MARKING (SOT-231)
CD1-2
SST210 0
D10
SD2100 / SST2100
CORPORATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
SYM BOL VGS VDS ID PD PARAMETERS/TEST CONDITIONS Gate-Sou rce Voltage Drai n-So urce Voltage Drai n Current Power Dissipation Powe r Derating TJ Tstg TL Ope rati ng Junction Temperature Sto rag e Temperature Le ad Temperature (1/16" from case for 10 sec.) LIMITS ±25 25 50 300 2.4 -55 to 150 -55 to 150 300
o
UNITS V mA mW mW/oC
C
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
SYMBOL STATIC V(BR)DS IGSS IDSS VGS(OFF ) VGS Drain-So urce Breakdown Voltage Gate Reverse Current Satura tio n Drain Current Gate -Source Cutoff Gate -Sou rce Voltage 0. 4 120 rDS(ON) DYNAM IC gfs gos gfs gos Cis s Cr s s SWIT CHING td(ON) tr tOF F Turn-OFF Time 0. 7 Turn-ON Time 0. 4 5 ns VDD = 5V, RL = 680, VIN = -4V to -2V Fo rward Transconductance Outp ut Conductance Fo rward Transconductance Outp ut Conductance Com mon -Sou rce Input Capacitance Reverse Transfer Capacitance 8000 250 10000 350 5 1 7000 VDG = 10V, VBS = 0V, ID = 10mA, f = 1kHz 500 6 pF 2 VDS = 10V, f = 1MHz, VGS = VBS = -5V 1000 VDS = 10V, VGS = VBS = 0V, f = 1kHz 500 µS Drai n-Source On-Resistance 40 50 0 1.5 200 25 ±0. 05 7 -1.5 -0.3 -1 0.5 15 ±1 10 -2 1 V V nA mA VGS = VBS = -5V, ID = 1µA VGS = ±25V, VDS = VBS = 0V VDS = 10V, VGS = VBS = 0V VDS = 10V, ID = 1µA, VBS = 0V VDG = 10V VBS = 0V ID = 100µA VBS = 0V ID = 5mA ID = 10mA VGS = 0V VGS = 5V PARAMETER TYP1 MIN MAX UNI T TEST CONDITIONS
Note 1: For design aid only, not subject to production testing.
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