|
Details, datasheet, quote on part number:XU444
| |
Datasheet text preview:
N-Channel JFET Monolithic Dual
CORPORATION
U443 / U444
FEATURES DESCRIPTION The U443 Series is an N-Channel Monolithic Dual JFET designed for high speed amplifier circuits. Featuring high gain ( > 6 mS typical), low leakage (< 1pA typical) and low noise this device is an excellent choice for high performance test and measurement, wideband amplifiers and VHF/UHF circuits. ORDERING INFORMATION Part Package Temperature Range -55oC to +150oC -55oC to +150oC U443-4 Hermetic M0-002AG (TO-78) XU443-4 Sorted Chips in Carriers
· High Gain . . . . . . . . . . . . . . . . . . . . . . . gfs > 6 mS typical · Low Leakage . . . . . . . . . . . . . . . . . . . . . . IG < 1pA typical · Low Noise
if e ent l Wideband · DHfF/rUHFiaAmplifiers Amplifiers ·V · Test and Measurement · Multi-Chip/Hybrids
APPLICATIONS
PIN CONFIGURATION
TO-78
1 2 3 4 5 6 7
SOURCE 1 DRAIN 1 GATE 1 CASE/BODY SOURCE 2 DRAIN 2 GATE 2
45 3 2 1
6 7
BOTTOM VIEW
C S2 G1 D2 D1 G2 S1
CJ1
U443 / U444
CORPORATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Parameter/Test Condition Gate-Drain Voltage Gate-Source Voltage Gate-Gate Voltage Forward Gate Current Power Dissipation (per side) (total) Power Derating (per side) (total) Operating Junction Temperature Storage Temperature Lead Temperature (1/16" from case for 10 seconds) Symbol VGD VGS VGG IG PD Limit -25 -25 ±50 50 367 500 3 4 -55 to 150 -65 to 200 300 Unit V V V mA mW mW mW/ oC mW/ oC o C o C o C
TJ Tstg TL
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
SYMBOL STATIC V(BR)GSS VGS(OFF ) IDSS IGSS Gate -Source Breakdown Voltage Gate-Source Cut off Voltage Saturatio n Drain Current Gate Reverse Current
2
CHARACTERISTCS
TYP1
U443 MIN MAX
U444 MI N MAX
UNIT
TEST CONDITIONS
-35 -3.5 15 -1 -2
-25 -1 6 -6 30 -500
-25 -1 6 -6 30 -500
V mA pA nA
IG = -1µA, VDS = 0V VDS = 10V, ID = 1nA VDS = 10V, VGS = 0V VGS = -15V, VDS = 0V TA = 150 oC VDG = 10V, ID = 5mA TA = 125 oC IG = 1mA, VDS = 0V
IG VGS(F) DYNAM IC gfs gos Cis s Cr s s en MATCHING | VGS1-VGS2| | VGS1-VGS2| T IDSS1 IDSS2 gfs1 gfs2 CMRR
Gate Operating Current Gate -Source Forward Voltage
-1 -0.3 0. 7
-500
-500
pA nA V
Common -Source Forward Transconductance Com mon -Source Output Conductance Com mon -Sou rce Input Capacitance Common-Source Reverse Transfer Capacitance Equ ivalent Input Noise Voltage
6 70 3 1 4
4. 5
9 200
4. 5
9 200
mS µS pF
VDG = 10V, ID = 5mA f = 1kHz VDG = 10V, ID = 5mA f = 1MHz VDG = 10V, ID = 5mA f = 10kHz
nV/ Hz
Diffe ren tial Gate-Source Voltage Gate -Sou rce Voltage Differential Change with Tem pe rature Saturatio n Drain Current Ratio Tra nscond uctan ce Ratio Common Mode Rejection Ratio
6 20 20 0.97 0.97 85
10
20
mV µV/ oC
VDG = 10V, ID = 5mA T = -55 to 25 oC VDG =10V, T = 25 to 125oC ID = 5mA VDS = 10V, VGS = 0V VDG = 10V, ID = 5mA f= 1 kHz
dB
VDD = 5 to 10V, ID = 5mA
NOTES: 1. For design aid only, not subject to production testing. 2. Pulse test; PW = 300µs, duty cycle 3%.
|
|
