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Details, datasheet, quote on part number:NE02107B
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| Part: | NE02107B |
| Category: | Discrete => Transistors => Bipolar => General Purpose |
| Description: | NPN Silicon High Frequency Transistor |
| Company: | California Eastern Laboratories |
| Datasheet: | Download NE02107B datasheet File size : 176 kB |
| Request For quote: | Find where to buy NE02107B
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Datasheet text preview:
NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
· HIGH INSERTION GAIN: 18.5 dB at 500 MHz · LOW NOISE FIGURE: 1.5 dB at 500 MHz
E
NE021 SERIES
· HIGH POWER GAIN: 12 dB at 2 GHz
B
· LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression
ers umb E: O T p ar t n r e N SE ng heet a A i PLE follow atas The this d ive: t f2r3o m r o m o 0 0 NE0 1 5 p TYPICAo n L NOISE PARAMETERS 021 3 n s NE 213 ber nu m NE0 2139 t 0 par t are N E wing h 13 e o sE02e9 aN foll d a t TYPICAL NOISE PARAMETERS e Th this ued : from ontin for 107 c dis NE02 35 fice f 1 so E 0 2 l l s a le N a ec s le a s . P tail de
DESCRIPTION
00 (CHIP) 07/07B
NEC's NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or in several package styles. The series uses the NEC gold, platinum, titanium, and platinum-silicide metallization system to provide the utmost in reliability. NE02107 is available in both common-base and common-emitter configurations and has been qualified for high-reliability space applications.
33 (SOT 23 STYLE)
35 (MICRO-X)
(TA = 25°C) Rn/50 .14
FREQ. (MHz) 500
N F OPT (dB) 1.2
GA
OPT
(dB)
MAG .36
ANG 69
VCE = 10 V, IC = 5 mA 1000 1500 2000 2500 3000 3500 500 1.5 2.0 2.4 2.6 3.6 3.7
18.60
39 (SOT 143 STYLE)
13.82 11.83 9.36 7.82 7.51 6.31
.31 .50
124 165
.12 .05
.44 .52 .68 .71
-175 -161 -141 -139 149
.06 .10 .14 .21
(TA = 25°C)
FREQ. (MHz) 500
N F OPT (dB) 1.8
GA
OPT
VCE = 10 V, IC = 20 mA 1.8 1000 1500 2000 2500 3000 3500 1.9 2.4 2.9 3.2 3.9 4.3
(dB) 17.5 9.5 7.5
MAG 0.11
ANG 156
Rn/50 .20
21.32
.16
.15
VCE = 10 V, IC = 20 mA 1000 1500 2000 2.1
16.15 13.50 11.02 9.12 8.10 6.48
.33 .46 .53
169
.13
-179 -167
.09 .08
12.5
0.27
168
.16
2.3 2.6
0.36 0.43
-156 -147
.18 .21
.57 .62 .67
-154 -139 -134
.14 .27 .42
California Eastern Laboratories
NE021 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT |S21|2 PARAMETERS AND CONDITIONS Gain Bandwidth Product at VCE = 10 V, IC = 20 mA Insertion Power Gain at VCE = 10 V, IC = 20 mA, f = 0.5 GHz f = 1 GHz f = 2 GHz Minimum Noise Figure2 at VCE = 10 V, IC = 3 mA, f = 0.5 GHz VCE = 10 V, IC = 5 mA, f = 2 GHz Collector Cutoff Current at VCB = 15 V, IE = 0 Emitter Cutoff Current at VEB = 2 V, IC = 0 Forward Current Gain at VCE = 10 V, IC = 20 mA Collector to Base Capacitance4 at VCB = 10 V, IE = 0, f = 1 MHz Thermal Resistance (Junction to Case) Thermal Resistance (Junction to Ambient) Total Power Dissipation pF ° C/W ° C/W mW 580 700 350 UNITS GHz dB dB dB dB dB µA µA 20 70 0.6 MIN NE02100 00 (CHIP) TYP 4.5 18.5 13 6.5 1.5 2.7 MAX MIN NE02107 07/07B3 TYP 4.5 18.5 13 6.5 1.5 2.7 MAX
5.5
5.5
NFMIN
4.5 1.0 1.0 250 1.0 70 20
4.5 1.0 1.0
ICBO IEBO hFE C CB RTH (J-C) RTH (J-A) PT5
70 0.6
250 1.0 90 500 700
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE PARAMETERS AND CONDITIONS Gain Bandwidth Product at VCE = 10 V, IC = 20 mA Insertion Power Gain at VCE = 10 V, IC = 20 mA, f = 0.5 GHz f = 1 GHz f = 2 GHz Minimum Noise Figure6 at VCE = 10 V, IC = 3 mA, f = 0.5 GHz VCE = 10 V, IC = 5 mA, f = 1 GHz f = 2 GHz Collector Cutoff Current at VCB = 15 V, IE = 0 Emitter Cutoff Current at VEB = 2 V, IC = 0 Forward Current Gain at VCE = 10 V, IC = 20 mA Collector to Base Capacitance4 at VCB = 10 V, IE = 0 , f = 1 MHz Thermal Resistance (Junction to Case) Thermal Resistance (Junction to Ambient) Total Power Dissipation pF °C/W °C/W mW 666 150 290 NE02133 NE02135 NE02139 2SC2351 2SC2149 2SC4092 33 35 39 MIN TYP MAX MIN TYP MAX MIN TYP MAX 4.5 4.5 4.5
SYMBOLS fT |S21E|2
UNITS GHz
dB dB dB
9 4
15 10 5
5
18.5 13 5.7
9
10
NFMIN
dB dB dB µA µA 40 70 0.75 1.5 3
1.5 1.5 2.7 1.0 1.0 200 1.0 20 70 0.6 4.0 1.0 1.0 250 1.0 120 600 500 500 200 40 70 .75 1.0 1.0 200
ICBO IEBO hFE CCB RTH (J-C) RTH (J-A) PT5
Notes: 1. Electronic Industrial Association of Japan. 2. Input and output are tuned for optimum noise figures. 3. Common base electrical charactristics see S-Parameters. 4. CCB measurement employs a three-terminal capacitance bridge 5. Minimum dissipations based on RTH (J-A) for applications without effective incorporating a guard circuit. The emitter terminal shall be heat sink, maximum dissipations based on RTH (J-C) for applications with connected to the guard terminal. effective heat sink. 6. Output and Input are tuned for minimum noise figure.
NE021 SERIES ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS VCBO VCEO VEBO IC TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Junction Temperature Storage Temperature UNITS V V V mA °C °C RATINGS 25 122 3 2003 -65 to +2004
800
NE02100, NE02107 DC POWER DERATING CURVES
Total Power Dissipation, PT (mW)
70
NE02100 RTH(J-C) = 70°C/W NE02107 RTH(J-C) = 90°C/W
600
Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Typical BVCER = 25 V for R 300 . 3. Maximum TJ for the NE02133 and NE02139 is +150°C. 4. Maximum storage temperature for the NE02135 is -65 to +150°C. Maximum storage temperature for the NE02133 and NE02139 is -55 to 150°C.
400
RTH (J-A) = 500°C/W NE02107
200
0 0 50 100 150 200
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NE02133 DC POWER DERATING CURVES
400
800
Ambient Temperature, TA (°C)
NE02135 DC POWER DERATING CURVES
Collector Dissipation, PC (mW)
300 1
2 200 3 4 100
1. Mounted On Al2O3 Substrate (32x21x10mm) And Encapsulated In Epoxy Resin (RTH (J-A) = 267°C/W 2. Mounted On Al2O3 Substrate (18x29x0.8mm) RTH(J-A) = 370°C/W 3. Mounted On Al2O3 Substrate (10x15x0.8mm) RTH(J-A) = 490°C/W 4. Free Air, RTH(J-A) = 666°C/W
Total Power Dissipation, PT (mW)
600
WITH INFINITE HEAT SINK RTH(J-C) = 120° C/W MOUNTED ON AI2O3 SUBSTRATE (20X50X0.6") RTH(J-A) = 190°C/W
400
200 FREE AIR RTH(J-A) = 600°C/W 0
0 0 50 100 150 200
0
50
100
150
200
Ambient Temperature, TA (°C)
Ambient Temperature, TA (°C)
VOLTAGE CURRENT CHARACTERISTICS
DEVICE CAPACITANCE
Collector to Base Capacitance, CCB (pF) Emitter to Base Capacitance, CEB (pF)
70 50 VCE = 10 V
2 f =1 MHz IE = 0
Collector Current, IC (mA)
30 20 10 7 5 3 2 1 0.7
CC B 1 CEB 0.7
0.5
0.3 0 0.5 1 2 3 5 7 10 20 30
0.5
0.6
0.7
0.8
0.9
Base to Emitter Voltage, VBE (V)
Collector to Base Voltage, VCB (V) Emitter to Base Voltage, VEB (V)
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